IRF6216TRPBF-1

IRF6216PbF-1 HEXFET® Power MOSFET VDS -150 RDS(on) max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V 0.24 Ω 33 nC -2.2 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRF6216PbF-1 SO-8 Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability ⇒ Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF6216PbF-1 IRF6216TRPbF-1 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units -2.2 -1.9 -19 2.5 0.02 ± 20 7.8 -55 to + 150 A W W/°C V V/ns °C 300 (1.6mm from case ) Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. Max. Units ––– ––– 20 50 °C/W Notes  through „ are on page 8 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF6216PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. -150 ––– ––– -3.0 ––– ––– ––– ––– Typ. ––– -0.17 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = -250μA ––– V/°C Reference to 25°C, ID = -1mA ƒ 0.240 Ω VGS = -10V, ID = -1.3A ƒ -5.0 V VDS = VGS, ID = -250μA -25 VDS = -150V, VGS = 0V μA -250 VDS = -120V, VGS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 2.7 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 33 7.2 15 18 15 33 26 1280 220 53 1290 99 220 Max. Units Conditions ––– S VDS = -50V, ID = -1.3A 49 ID = -1.3A 11 nC VDS = -120V 23 VGS = -10V, ––– VDD = -75V ––– ID = -1.3A ns ––– RG = 6.5Ω ––– VGS = -10V ƒ ––– VGS = 0V ––– VDS = -25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = -120V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to -120V Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy‚ Avalanche Current Typ. Max. Units ––– ––– 200 -4.0 mJ A Diode Characteristics IS ISM VSD trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge www.irf.com © 2014 International Rectifier Min. Typ. Max. Units ––– ––– -2.2 ––– ––– -19 ––– ––– ––– ––– 80 310 -1.6 120 460 A V nS nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.3A, VGS = 0V TJ = 25°C, IF = -1.3A di/dt = -100A/μs ƒ Submit Datasheet Feedback D S ƒ June 30, 2014 IRF6216PbF-1 TOP -I D, Drain-to-Source Current (A) 10 BOTTOM 100 VGS -15V -12V -10V -8.0V -7.0V -6.0V -5.5V -5.0V TOP 1 -I D, Drain-to-Source Current (A) 100 -5.0V 0.1 20μs PULSE WIDTH T J= 25 ° C 0.01 0.1 1 10 BOTTOM VGS -15V -12V -10V -8.0V -7.0V -6.0V -5.5V -5.0V 10 -5.0V 1 20μs PULSE WIDTH T J= 150 ° C 0.1 0.1 100 1 10 100 -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 I D = -2.2A TJ = 150 ° C 1 V DS= -50V 20μs PULSE WIDTH 0.1 5.0 5.5 6.0 6.5 7.0 7.5 8.0 -V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 www.irf.com © 2014 International Rectifier (Normalized) 10 RDS(on) , Drain-to-Source On Resistance -I D, Drain-to-Source Current (A) 2.0 TJ = 25 ° C 1.5 1.0 0.5 V GS = -10V 0.0 -60 -40 -20 0 20 40 60 TJ , Junction Temperature 80 100 120 140 ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback June 30, 2014 160 IRF6216PbF-1 10000 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd ID = -1.3A VDS = -120V VDS = -75V VDS = -30V 10 Ciss 1000 -V GS , Gate-to-Source Voltage (V) C, Capacitance(pF) Coss = Cds + Cgd Coss 100 Crss 10 8 6 4 2 0 1 10 100 0 1000 15 20 25 30 35 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 -I D, Drain-to-Source Current (A) 100 -I SD, Reverse Drain Current (A) 10 QG , Total Gate Charge (nC) -VDS, Drain-to-Source Voltage (V) 10 TJ = 150 ° C TJ = 25 ° C 1 V GS= 0 V 0.1 0.4 0.6 0.8 1.0 -V SD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 5 www.irf.com © 2014 International Rectifier OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100μsec 1msec 1 10msec 0.1 1.2 Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1000 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback June 30, 2014 IRF6216PbF-1 2.5 RD V DS VGS 2.0 D.U.T. -I D , Drain Current (A) RG - VDD + 1.5 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1.0 Fig 10a. Switching Time Test Circuit 0.5 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJA ) 100 D = 0.50 0.20 10 Thermal Response 0.10 0.05 P DM 0.02 1 t1 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.1 0.0001 0.001 0.01 0.1 1 t1/ t 2 J = P DM x Z thJA 10 +T A 100 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 1000 IRF6216PbF-1 R DS(on) , Drain-to -Source On Resistance (Ω) R DS (on) , Drain-to-Source On Resistance ( Ω) 0.23 0.22 VGS = -10V 0.21 0.20 0.19 0 2 4 6 8 10 12 14 16 1.50 1.00 0.50 ID = -2.2A 0.00 4.5 18 6.0 7.5 9.0 10.5 12.0 13.5 15.0 -V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG -VGS 50KΩ .2μF 12V QGS .3μF QGD 500 D.U.T. +VDS VG TOP VGS 400 IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform L VDS I AS D.U.T RG IAS -20V tp VDD A DRIVER 0.01Ω EAS , Single Pulse Avalanche Energy (mJ) Charge -3mA BOTTOM 300 200 100 0 25 tp V(BR)DSS 15V Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 www.irf.com © 2014 International Rectifier ID -1.8A -3.2A -4.0A 50 75 100 Starting Tj, Junction Temperature 125 ( ° C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current Submit Datasheet Feedback June 30, 2014 150 IRF6216PbF-1 SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 8X b 0.25 [.010] A MAX 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BASIC .025 BAS IC 0.635 BAS IC e1 6X MILLIMETERS MAX A 5 INCHES MIN H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° C A1 y 0.10 [.004] 8X c 8X L 7 C A B FOOT PRINT NOT ES: 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 8X 0.72 [.028] 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: THIS IS AN IRF7101 (MOS FET ) INTERNATIONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY SIT E CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF6216PbF-1 SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 25mH, RG = 25Ω, IAS = -4.0A. ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board. † Qualification information Industrial Qualification level (per JEDE C JE S D47F Moisture Sensitivity Level SO-8 †† guidelines) MS L1 †† (per JEDE C J-S T D-020D ) RoHS compliant Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014