IRF6643TR1PBF

DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 200 W per channel into 8Ω load in half-bridge configuration amplifier • Dual sided cooling compatible • Compatible with existing surface mount technologies • RoHS compliant, halogen-free • Lead-free (qualified up to 260°C reflow) VDS 150 V RDS(ON) typ. @ VGS = 10V 29 mΩ Qg typ. 39 nC RG(int) typ. 0.9 Ω DirectFET® ISOMETRIC MZ Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details) SH SJ ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6643PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET® package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Base part number Package Type IRF6643TRPbF DirectFET Medium Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6643TRPbF Absolute Maximum Ratings VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C PD @TA = 25°C PD @TA = 70°C EAS IAR TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V  Continuous Drain Current, VGS @ 10V  Continuous Drain Current, VGS @ 10V  Pulsed Drain Current  Power Dissipation Power Dissipation  Power Dissipation  Single Pulse Avalanche Energy  Avalanche Current  Linear Derating Factor Operating Junction and Storage Temperature Range Max. ±20 35 6.2 5.0 76 89 2.8 1.8 50 7.6 0.022 -40 to + 150 Units V A W mJ A W/°C °C Notes  through  are on page 9 1 www.irf.com © 2013 International Rectifier May 31, 2013 IRF6643TRPbF Thermal Resistance Parameter Junction-to-Ambient  Junction-to-Ambient  Junction-to-Ambient  Junction-to-Case  Junction-to-PCB Mounted RθJA RθJA RθJA RθJC RθJ-PCB Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient ΔVGS(th) IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Typ. ––– 12.5 20 ––– 1.0 Min. 150 ––– ––– 3.0 ––– ––– ––– ––– ––– ––– Typ. ––– 0.18 29 4.0 -11 ––– ––– ––– ––– 0.8 Max. ––– ––– 34.5 4.9 ––– 20 250 100 -100 ––– Units V V/°C mΩ V mV/°C µA S nA Max. 45 ––– ––– 1.4 ––– Units °C/W Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 7.6A  VDS = VGS, ID = 150µA VDS = 150V, VGS = 0V VDS = 120V, VGS = 0V, TJ=125°C VGS = 20V VGS = -20V Ω Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw td(on) tr td(off) tf Ciss Coss Crss Coss Forward Transconductance Total Gate Charge Pre-VthGate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance 16 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 39 9.6 2.2 11 16 13 9.2 5.0 13 4.4 2340 300 61 1950 ––– 55 ––– ––– 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Coss Output Capacitance ––– 140 ––– Min. Typ. Max. ––– ––– 58 nC ns pF VDS = 10V, ID = 7.6A VDS = 75V VGS = 10V ID = 7.6A VDD = 75V, VGS = 10V ID = 7.6A VGS = 0V VDS = 25V ƒ = 1.0MHz VGS=0V, VDS=1.0V, ƒ=1.0MHz VGS=0V, VDS=80V, ƒ=1.0MHz Diode Characteristics IS ISM VSD trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge www.irf.com © 2013 International Rectifier Units D A ––– ––– 76 ––– ––– ––– ––– 67 190 1.3 100 280 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 7.6A, VGS = 0V  TJ = 25°C, IF = 7.6A,VDD = 50V di/dt = 100A/µs  G S V ns nC May 31, 2013 IRF6643TRPbF 100 100 VGS 15V 10V 8.0V 7.0V 7.0V TOP BOTTOM 10 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V BOTTOM 7.0V 10 ≤60µs PULSE WIDTH Tj = 150°C ≤60µs PULSE WIDTH 1 Tj = 25°C 0.1 1 0.1 1 10 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 2.5 TJ = 150°C TJ = 25°C TJ = -40°C 10 Typical R DS(on) (Normalized) ID , Drain-to-Source Current(Α) 100 1 ID = 7.6A VGS = 10V 2.0 1.5 1.0 VDS = 10V ≤60µs PULSE WIDTH 0.1 4.0 5.0 6.0 7.0 0.5 -60 -40 -20 0 8.0 VGS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 ID = 7.6A VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 Ciss 1000 Coss Crss 100 10 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 www.irf.com 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) © 2013 International Rectifier 10 VDS = 120V VDS = 75V VDS = 30V 8 6 4 2 0 0 10 20 30 40 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs Gate-to-Source Voltage May 31, 2013 IRF6643TRPbF 1000 TJ = 150°C TJ = 25°C ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 TJ = -40°C 10 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100µsec 10 1msec 1 TA = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 0.1 2.0 0.1 1.0 VSD , Source-to-Drain Voltage (V) 10.0 100.0 1000.0 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 5.0 VGS(th) Gate threshold Voltage (V) 7.0 6.0 ID , Drain Current (A) 10msec 5.0 4.0 3.0 2.0 1.0 4.5 4.0 3.5 ID = 250µA ID = 150µA 3.0 2.5 2.0 0.0 25 50 75 100 125 -75 150 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) TJ , Ambient Temperature (°C) Fig 10. Typical Threshold Voltage vs. Junction Temperature Fig 9. Maximum Drain Current vs. Ambient Temperature 100 Thermal Response ( Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = Pdm x Zthja + Ta SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  4 www.irf.com © 2013 International Rectifier May 31, 2013 70 45 TJ= 25°C ID = 7.6A (mΩ) 60 DS(on) TJ = 125°C 50 Typical R RDS(on), Drain-to -Source On Resistance (mΩ) IRF6643TRPbF 40 TJ = 25°C 30 VGS = 7.0V 40 VGS = 8.0V VGS = 10V VGS = 15V 35 30 25 20 4 6 8 10 12 14 0 16 10 VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance vs. Gate Voltage 20 30 40 50 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 15V DRIVER L VDS D.U.T RG IAS 20V + V - DD A 0.01Ω tp Fig 15a. Unclamped Inductive Test Circuit EAS, Single Pulse Avalanche Energy (mJ) 200 ID 1.5A 3.0A BOTTOM 15A TOP 160 120 80 40 0 25 V(BR)DSS 50 75 100 125 150 Starting TJ, Junction Temperature (°C) tp Fig 14. Maximum Avalanche Energy vs. Drain Current I AS Fig 15b. Unclamped Inductive Waveforms Fig 16a. Switching Time Test Circuit 5 www.irf.com © 2013 International Rectifier Fig 16b. Switching Time Waveforms May 31, 2013 IRF6643TRPbF Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 17a. Gate Charge Test Circuit Qgd Qgodr Fig 17b. Gate Charge Waveform Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 6 www.irf.com © 2013 International Rectifier May 31, 2013 IRF6643TRPbF DirectFET® Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2013 International Rectifier May 31, 2013 IRF6643TRPbF DirectFET® Outline Dimension, MZ Outline (Medium Size Can, D-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC CODE MIN MAX A 6.35 6.25 B 4.80 5.05 C 3.95 3.85 D 0.45 0.35 E 0.72 0.68 F 0.72 0.68 G 0.97 0.93 H 0.67 0.63 J 0.32 0.28 K 1.26 1.13 L 2.66 2.53 M 0.616 0.676 R 0.020 0.080 P 0.17 0.08 IMPERIAL MAX MAX 0.246 0.250 0.189 0.201 0.152 0.156 0.014 0.018 0.027 0.028 0.027 0.028 0.037 0.038 0.025 0.026 0.011 0.013 0.044 0.050 0.100 0.105 0.0235 0.0274 0.0008 0.0031 0.003 0.007 DirectFET® Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2013 International Rectifier May 31, 2013 IRF6643TRPbF DirectFET® Tape & Reel Dimension (Showing component orientation). LOADED TAPE FEED DIRECTION NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6643TRPBF). For 1000 parts on 7" reel, order IRF6643TR1PBF DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 5.45 0.219 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MAX MIN CODE MAX MIN MIN MAX MAX 6.9 12.992 N.C A 177.77 N.C N.C 330.0 N.C 0.75 0.795 B N.C 19.06 20.2 N.C N.C N.C 0.53 C 0.504 0.50 13.5 12.8 0.520 12.8 13.2 0.059 D 0.059 N.C 1.5 1.5 N.C N.C N.C 2.31 E 3.937 58.72 N.C 100.0 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 13.50 18.4 G 0.47 0.488 11.9 N.C 12.4 0.567 12.01 14.4 H 0.47 0.469 11.9 11.9 N.C 0.606 12.01 15.4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information† MSL1 DirectFET Moisture Sensitivity Level (per JEDEC J-STD-020D††) Yes RoHS Compliant † †† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 7.6A. Surface mounted on 1 in. square Cu board. Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Revision History Date 05/30/2013 Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermal couple mounted to top (Drain) of part. Rθ is measured at TJ of approximately 90°C. Comments Converted the data sheet to Class-D Audio formatting template. No change in electrical parameters. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2013 International Rectifier May 31, 2013 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 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