IRF6644PbF
IR MOSFET
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
Quality Requirement Category: Consumer
Applications
RoHS Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specifies MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Low Profile (< 0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
VDSS
VGS
RDS(on) (typ.)
100V min.
± 20V max
Qg tot
Qgd
10.3m@ 10V
Vgs(th)
28nC
9.0nC
3.7V
S
D
G
D
S
DirectFET™ ISOMETRIC
MN
Applicable DirectFET® Outline and Substrate Outline (see pg. 13, 14 for details)
SH
SJ
SP
MZ
MN
Description
The IRF6644PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the
lowest on-state resistance in a package that has a footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows
dual sided cooling to maximize thermal transfer in power systems improving previous best thermal resistance by 80%.
The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V-75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes the device ideal for high performance isolated DC-DC converters.
60
55
RDS (on), Drain-to -Source On Resistance (m)
RDS(on) , Drain-to -Source On Resistance (m)
ID = 34A
50
45
40
35
30
25
TJ = 125°C
20
15
TJ = 25°C
10
5
0
2
4
6
8
10
12
14
16
18
20
Typical On-Resistance vs. Gate Voltage
Final Datasheet
www.infineon.com
VGS = 7.0V
VGS = 8.0V
VGS = 10V
VGS = 12V
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
160
ID , Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Figure 1
80
Figure 2
Typical On-Resistance vs. Drain Current
Please read the important Notice and Warnings at the end of this document
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IR MOSFET
IRF6644PbF
Table of Contents
Table of Contents
Applications
Description
…..………………………………………………………………………...……………..……………1
….……………………………………………………………………………………………………1
Table of Contents ….………………………………………………………………………………………………...2
1
Parameters ………………………………………………………………………………………………3
2
Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4
3
Electrical characteristics ………………………………………………………………………………5
4
Electrical characteristic diagrams ……………………………………………………………………6
Package Information ………………………………………………………………………………………………13
Qualification Information ……………………………………………………………………………………………16
Revision History …………………………………………………………………………………………..…………17
Final Datasheet
2
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IR MOSFET
IRF6644PbF
Parameters
1
Parameters
Table1
Key performance parameters
Parameter
Values
Units
VDS
100
V
RDS(on) max
13
m
ID @ TC @ 25°C
57
A
ID @ TA @ 25°C
10
A
Final Datasheet
3
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IR MOSFET
IRF6644PbF
Maximum ratings and thermal characteristics
2
Maximum ratings and thermal characteristics
Table 2
Maximum ratings (at TJ=25°C, unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Maximum Power Dissipation
Gate-to-Source Voltage
Peak Soldering Temperature
Operating and Storage Temperature
Table 3
Thermal characteristics
Parameter
Symbol
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Case
RJC
Junction-to-PCB Mounted
RJA-PCB
Table 4
Values
ID
ID
ID
IDM
PD
PD
PD
VGS
TP
TC = 25°C, VGS @ 10V
TC = 70°C, VGS @ 10V
TA= 25°C, VGS @ 10V
TC = 25°C
TC = 25°C
TC = 70°C
TA = 25°C
-
57
46
10
228
89
57
2.8
± 20
270
TJ, TSTG
-
-40 ... 150
Conditions
-
Min.
-
Typ.
12.5
20
1.0
Max.
45
1.4
-
Unit
A
W
V
°C
Unit
°C/W
Avalanche characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Symbol
Values
Unit
EAS
IAR
86
34
mJ
A
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET™ Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
(Starting TJ = 25°C, L = 0.15mH, RG = 50, IAS = 34A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heat sink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R is measured at TJ of approximately 90°C.
Final Datasheet
4
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IRF6644PbF
Electrical characteristics
3
Electrical characteristics
Table 5
Static characteristics
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V(BR)DSS
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Reference to 25°C, ID = 1mA
RDS(on)
VGS = 10V, ID = 34A
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 150µA
Gate Threshold Voltage Temp. Coefficient VGS(th)/TJ
VDS = 100V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
VDS = 80V, VGS = 0V, TJ = 125°C
IGSS
VGS = 20V
Gate-to-Source Forward Leakage
VGS = -20V
IGSS
Gate Resistance
RG
Table 6
Min.
100
2.8
3.7
4.8
-
-11
-
-
1.6
20
250
100
-100
-
Symbol
Conditions
Forward Trans conductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = 10V, ID = 34A
VDS = 16V ,VGS = 0V
VDD = 50V
ID = 34A
RG = 1.8
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
Min.
65
-
Output Capacitance
Output Capacitance
Coss
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
-
V
V/°C
m
V
mV°/C
µA
nA
ID = 34A
VDS = 50V
VGS = 10V
See Fig.8
Values
Typ. Max.
28
42
7.0
3.0
9.0
9.0
16
18
9.5
16
15
5.7
1770
280
60
2025
245
Unit
S
nC
nC
ns
pF
-
Reverse Diode
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Final Datasheet
Unit
Dynamic characteristics
Parameter
Table 7
Values
Typ. Max.
0.1
10.3 13
Symbol
IS
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 34A,VGS = 0V
TJ = 25°C, IF = 34A, VDD = 50V
di/dt = 100A/µs
D
Min.
Values
Typ. Max.
-
-
57
-
-
228
-
53
97
1.3
80
146
G
ISM
VSD
trr
Qrr
S
5
Unit
A
V
ns
nC
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IR MOSFET
IRF6644PbF
Electrical characteristic diagrams
4
1000
1000
ID , Drain-to-Source Current (A)
TOP
100
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.0V
TOP
ID , Drain-to-Source Current (A)
Electrical characteristic diagrams
10
5.0V
1
100
BOTTOM
5.0V
10
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
0.1
0.1
1
10
0.1
100
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Figure 3
1
Figure 4
Typical Output Characteristics
Typical Output Characteristics
2.4
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID , Drain-to-Source Current (A)
1000
100
TJ = 150°C
TJ = 25°C
10
VDS = 50V
60µs PULSE WIDTH
1
2
3
4
5
6
7
8
ID = 34A
2.0
1.6
1.2
0.8
0.4
9
-60 -40 -20 0
Typical Transfer Characteristics
Final Datasheet
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Figure 5
VGS = 10V
Figure 6
6
Normalized On-Resistance vs. Temperature
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IR MOSFET
IRF6644PbF
Electrical characteristic diagrams
100000
Ciss
1000
Coss
Crss
100
ID = 34A
12
VGS , Gate-to-Source Voltage (V)
10000
C, Capacitance (pF)
14
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
VDS = 80V
VDS = 50V
10
VDS= 20V
8
6
4
2
0
10
0.1
1
10
0
100
5
15
20
25
30
35
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Figure 7
10
Typical Capacitance vs. Drain-to-Source
Voltage
Figure 8
Typical Gate Charge vs. Gate-to-Source
Voltage
ID , Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
100
T J = 150°C
10
T J = 25°C
1
100
100µsec
1msec
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
Typical Source-Drain Diode Forward
Voltage
Final Datasheet
DC
0.1
1.2
0.1
VSD , Source-to-Drain Voltage (V)
Figure 9
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
VDS , Drain-to-Source Voltage (V)
Figure 10
7
Maximum Safe Operating Area
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IR MOSFET
IRF6644PbF
Electrical characteristic diagrams
60
5.0
50
4.5
VGS(th) , Gate threshold Voltage (V)
ID , Drain Current (A)
40
30
20
10
0
4.0
3.5
3.0
2.5
ID = 150µA
2.0
ID = 1.0mA
ID = 250µA
ID = 1.0A
1.5
25
50
75
100
125
150
-75 -50 -25
TC , Case Temperature (°C)
Figure 11
0
25
50
75
100 125 150
T J , Temperature ( °C )
Maximum Drain Current vs. Case
Temperature
Figure 12
Typical Threshold Voltage vs. Junction
Temperature
E AS , Single Pulse Avalanche Energy (mJ)
400
350
TOP
ID
4.2A
8.9A
BOTTOM 34A
300
250
200
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Figure 13
Final Datasheet
Maximum Avalanche Energy vs. Drain Current
8
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IR MOSFET
IRF6644PbF
Electrical characteristic diagrams
100
Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming DTj = 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming DTj = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Figure 14
Typical Avalanche Current vs. Pulse Width
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t 1 , Rectangular Pulse Duration (sec)
Figure 15
Final Datasheet
Maximum Effective Transient Thermal Impedance, Junction-to-Case
9
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IR MOSFET
IRF6644PbF
Electrical characteristic diagrams
Surface mounted on 1 in. square
Cu board (still air).
Mounted to PCB with
Small clip heatsink (still air).
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Figure 16
Final Datasheet
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs
10
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IR MOSFET
IRF6644PbF
Electrical characteristic diagrams
Figure 17a
Gate Charge Test Circuit
Figure 17b
Gate Charge Waveform
Unclamped Inductive Test Circuit
Figure 18b
Unclamped Inductive Waveforms
Figure 18a
Final Datasheet
11
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IR MOSFET
IRF6644PbF
Electrical characteristic diagrams
Figure 19a
Final Datasheet
Switching Time Test Circuit
Figure 19b
12
Switching Time Waveforms
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IR MOSFET
IRF6644PbF
Package Information
5
Package Information
DirectFET™ Board Footprint, MN Outline
Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™.
This includes all recommendations for stencil and substrate designs.
Note: For the most current drawing please refer to website at : www.irf.com/package/
Final Datasheet
13
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IR MOSFET
IRF6644PbF
Package Information
DirectFET™ Outline Dimension, MN Outline
(Medium Size Can, N-Designation).
Please see DirectFET™ application note AN-1035 for all details regarding the assembly of DirectFET™.
This includes all recommendations for stencil and substrate designs.
DirectFETTM Part Marking
Note: For the most current drawing please refer to website at : www.irf.com/package/
Final Datasheet
14
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IR MOSFET
IRF6644PbF
Tape & Reel Information
DirectFETTM Tape & Reel Dimension (Showing component orientation).
Note: For the most current drawing please refer to website at : www.irf.com/package/
Final Datasheet
15
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IR MOSFET
IRF6644PbF
Qualification Information
6
Qualification Information
Qualification Information
Consumer
(per JEDEC JESD47F) †
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
†
MSL1
(per JEDEC J-STD-020D)†
DirectFET™ Medium Can
Yes
Applicable version of JEDEC standard at the time of product release.
Final Datasheet
16
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IR MOSFET
IRF6644PbF
Revision History
Revision History
Major changes since the last revision
Page or Reference Revision
Date
Description of changes
All pages
1.0
2006-08-18
First release data sheet.
All page
2.0
2017-03-28
This is Unique datasheet Project with Id Ratings based on RthJC.
The datasheet is converted in New Infineon Template.
Final Datasheet
17
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µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,
OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
Edition 2015-05-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
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contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement of
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dangerous substances. For information on the types
in question please contact your nearest Infineon
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In addition, any information given in this document
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