IRF7201TRPBF

PD- 95022 IRF7201PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Description HEXFET® Power MOSFET A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V RDS(on) = 0.030Ω Top View HEXFET® Fifth Generation power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp