IRF7220TRPBF

PD - 95172 IRF7220PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -14V RDS(on) = 0.012Ω Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -14 ±11 ±8.8 ±88 2.5 1.6 0.02 110 ± 12 -55 to + 150 V W/°C mJ V °C Max. Units 50 °C/W A W Thermal Resistance Parameter RθJA www.irf.com Maximum Junction-to-Ambientƒ 1 10/6/04 IRF7220PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -14 ––– ––– ––– -0.60 8.4 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = -5mA -0.006 ––– V/°C Reference to 25°C, I D = -1mA .0082 0.012 VGS = -4.5V, ID = -11A ‚ Ω .0125 0.020 VGS = -2.5V, ID = -8.8A ‚ ––– ––– V VDS = VGS, ID = -250µA ––– ––– S VDS = -10V, ID = -11A ––– -5.0 VDS = -11.2V, VGS = 0V µA ––– -100 VDS = -11.2V, VGS = 0V, TJ = 70°C ––– -100 VGS = -12V nA ––– 100 VGS = 12V 84 125 ID = -11A 13 20 nC VDS = -10V 37 55 VGS = -5.0V ‚ 19 ––– VDD = -10V 420 ––– ID = -11A ns 140 ––– RG = 6.2Ω 1040 ––– RD = 0.91Ω ‚ 8075 ––– VGS = 0V 4400 ––– pF VDS = -10V 4150 ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– -2.5 ––– ––– -88 ––– ––– ––– ––– 160 147 -1.2 240 220 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.5A, VGS = 0V ‚ TJ = 25°C, IF = -2.5A di/dt = 100A/µs ‚ D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Pulse width ≤ 300µs; duty cycle ≤ 2%. 2 ƒ When mounted on 1 inch square copper board, t