PD- 93916
IRF7240
HEXFET® Power MOSFET
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Description
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
VDSS
RDS(on) max
ID
-40V
0.015@VGS = -10V
0.025@VGS = -4.5V
-10.5A
-8.4A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
SO-8
T o p V ie w
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-40
-10.5
-8.6
-43
2.5
1.6
20
± 20
-55 to + 150
V
mW/°C
V
°C
Max.
Units
50
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
1
3/6/01
IRF7240
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-40
–––
–––
–––
-1.0
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.025
–––
–––
–––
–––
–––
–––
–––
–––
73
31
17
52
490
210
97
9250
580
520
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.015
VGS = -10V, ID = -10.5A
Ω
0.025
VGS = -4.5V, I D = -8.4A
-3.0
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -10.5A
-15
VDS = -32V, VGS = 0V
µA
-25
VDS = -32V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
110
ID = -10.5A
47
nC
VDS = -20V
26
VGS = -10V
–––
VDD = -20V
–––
ID = -1.0A
ns
–––
RG = 6.0Ω
–––
VGS = -10V
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-43
–––
–––
–––
–––
43
75
-1.2
65
110
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board, t ≤ 5sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7240
1000
1000
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
100
100
10
1
0.1
-2.70V
10
-2.70V
1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
TJ = 150 ° C
10
TJ = 25 ° C
0.1
V DS = -25V
20µs PULSE WIDTH
3.0
3.5
4.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
0.01
2.5
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
-I D , Drain-to-Source Current (A)
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
TOP
-I D , Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
TOP
4.5
ID = -10.5A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7240
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance(pF)
12000
Ciss
8000
4000
Coss
-VGS , Gate-to-Source Voltage (V)
20
16000
ID = -10.5A
V DS = -32V
V DS = -20V
V DS = -8V
16
12
8
4
Crss
0
0
1
10
0
100
20
40
60
80
100
QG , Total Gate Charge (nC)
-V DS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
100us
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R DS(on)
1.2
1ms
10
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7240
12
VDS
VGS
10
RD
D.U.T.
-ID , Drain Current (A)
RG
+
8
VDD
VGS
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
td(on)
tr
t d(off)
tf
VGS
0
10%
25
50
75
100
125
TC , Case Temperature
150
( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P DM
t1
0.1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.035
RDS (on) , Drain-to-Source On Resistance ( Ω)
R DS(on) , Drain-to -Source On Resistance ( Ω )
IRF7240
0.030
0.025
0.020
0.015
ID = -10.5A
0.010
0.0
4.0
8.0
12.0
16.0
0.025
VGS = -4.5V
0.020
0.015
VGS = -10V
0.010
0
10
-V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
20
30
40
50
-I D , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF7240
200
3.0
2.5
ID = -250µA
Power (W)
-V GS(th) , Variace ( V )
160
120
80
2.0
40
0
1.5
-75
-50
-25
0
25
50
75
100
125
T J , Temperature ( °C )
150
0.001
0.010
0.100
1.000
10.000
100.000
Time (sec)
Fig 16. Typical Power Vs. Time
Fig 15. Typical Vgs(th) Variance Vs.
Juction Temperature
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7
IRF7240
SO-8 Package Details
D
5
A
8
6
7
6
5
H
0.25 [.010]
1
2
3
A
4
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
e1
6X
e
e1
C
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILLIMET ERS
MIN
A
E
INCHES
DIM
B
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES:
1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENSION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS THE LENGTH OF LEAD F OR S OLDERING T O
A S UBST RATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INTERNAT IONAL
RECTIFIER
LOGO
8
YWW
XXXX
F7101
DATE CODE (YWW)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
LOT CODE
PART NUMBER
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IRF7240
Tape and Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .48 4 )
1 1 .7 ( .46 1 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.0 0
(1 2 .9 9 2 )
M AX .
1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
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