IRF7307QPbF
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HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S1
These HEXFET® Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability
making it ideal in a variety of power applications. This
dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Package Type
IRF7307QPbF
IRF7307QPbF
SO-8
SO-8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
N-Ch
P-Ch
20V
-20V
VDSS
P-CHANNEL MOSFET
Description
Base Part Number
N-CHANNEL MOSFET
1
8
RDS(on) 0.050Ω 0.090Ω
Top View
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
EOL Notice
IRF7307QPbF
IRF7307QTRPbF
EOL 529
Absolute Maximum Ratings
Max.
Parameter
I D @ TA = 25°C
ID @ TA = 25°C
I D @ TA = 70°C
IDM
P D @TA = 25°C
VGS
dv/dt
TJ, TSTG
10 Sec. Pulse Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
N-Channel
P-Channel
5.7
5.2
4.1
21
-4.7
-4.3
-3.4
-17
2.0
0.016
± 12
5.0
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
1
Maximum Junction-to-Ambient
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Typ.
Max.
Units
62.5
°C/W
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IRF7307QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V (BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
V GS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
LS
Internal Drain Inductace
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max.
20
-20
0.044
-0.012
0.050
0.070
0.090
0.140
0.70
-0.70
8.30
4.00
1.0
-1.0
25
-25
±100
20
22
2.2
3.3
8.0
9.0
9.0
8.4
42
26
32
51
51
33
4.0
6.0
660
610
280
310
140
170
Units
V
V/°C
Ω
V
S
µA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 2.6A
VGS = 2.7V, ID = 2.2A
VGS = -4.5V, ID = -2.2A
VGS = -2.7V, ID = -1.8A
VDS = VGS, I D = 250µA
VDS = VGS, I D = -250µA
VDS = 15V, I D = 2.6A
VDS = -15V, I D = -2.2A
VDS = 16V, VGS = 0V
VDS = -16V, V GS = 0V,
VDS = 16V, VGS = 0V, TJ = 125°C
VDS = -16V, V GS = 0V, TJ = 125°C
VGS = ± 12V
N-Channel
I D = 2.6A, VDS = 16V, VGS = 4.5V
P-Channel
I D = -2.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 2.6A, RG = 6.0Ω,
RD = 3.8Ω
P-Channel
VDD = -10V, ID = -2.2A, RG = 6.0Ω,
RD = 4.5Ω
Between lead tip
and center of die contact
N-Channel
VGS = 0V, VDS = 15V, = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
I SM
Pulsed Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
Min. Typ. Max. Units
Conditions
2.5
-2.5
A
21
-17
1.0
TJ = 25°C, IS = 1.8A, VGS = 0V
V
-1.0
TJ = 25°C, IS = -1.8A, VGS = 0V
29
44
N-Channel
ns
56
84
TJ = 25°C, IF = 2.6A, di/dt = 100A/µs
22
33
P-Channel
nC
TJ = 25°C, IF = -2.2A, di/dt = 100A/µs
71 110
Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
N-Channel ISD ≤ 2.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
2
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IRF7307QPbF
N-Channel
1000
1000
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
TOP
100
10
10
1.5V
20μs PULSE WIDTH
TJ = 25°C
A
1.5V
1
0.1
100
1
10
100
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
10
VDS = 15V
20μs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
1.5
1.0
0.5
0.0
-60 -40 -20
A
5.0
V GS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
Ciss
Coss
Crss
300
0
1
10
100
A
V DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
3
20
40
60
A
80 100 120 140 160
Fig 4. Normalized On-Resistance
Vs. Temperature
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
600
VGS = 4.5V
0
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
900
100
ID = 4.3A
VGS , Gate-to-Source Voltage (V)
1200
10
Fig 2. Typical Output Characteristics
100
1.5
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
1
20μs PULSE WIDTH
TJ = 150°C
A
1
0.1
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I D = 2.6A
VDS = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 11
0
0
5
10
15
20
25
A
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
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IRF7307QPbF
N-Channel
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
100
10
TJ = 150°C
TJ = 25°C
1
0.0
0.5
1.0
1.5
2.0
10
1ms
TA = 25 °C
TJ = 150 °C
Single Pulse
VGS = 0V
0.1
100us
1
0.1
A
2.5
1
RD
VDS
VGS
5.0
I D , Drain Current (A)
100
Fig 8. Maximum Safe Operating Area
6.0
D.U.T.
RG
4.0
3.0
+
V
- DD
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
1.0
0.0
10
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
10ms
Fig 10a. Switching Time Test Circuit
25
50
75
100
TC , Case Temperature
125
150
( °C)
VDS
90%
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
10%
VGS
td(on)
50KΩ
12V
t d(off)
tf
Fig 10b. Switching Time Waveforms
.2μF
.3μF
D.U.T.
+
V
- DS
QG
4.5V
VGS
QGS
3mA
QGD
VG
IG
ID
Current Sampling Resistors
Fig 11a. Gate Charge Test Circuit
4
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Fig 11b. Basic Gate Charge Waveform
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IRF7307QPbF
P-Channel
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
10
1
-1.5V
20μs PULSE WIDTH
TJ = 25°C
A
0.1
0.01
0.1
1
10
10
1
-1.5V
20μs PULSE WIDTH
TJ = 150°C
0.1
0.01
100
0.1
Fig 12. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
TJ = 150°C
1
VDS = -15V
20μs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
A
I D = -3.6A
1.5
1.0
0.5
0.0
-60
-VGS , Gate-to-Source Voltage (V)
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
Ciss
1000
C oss
Crss
500
0
10
100
A
-VDS , Drain-to-Source Voltage (V)
Fig 16. Typical Capacitance Vs.
Drain-to-Source Voltage
5
-20
0
20
40
60
80
A
100 120 140 160
Fig 15. Normalized On-Resistance
Vs. Temperature
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
1
VGS = -4.5V
-40
TJ , Junction Temperature (°C)
Fig 14. Typical Transfer Characteristics
1500
A
100
Fig 13. Typical Output Characteristics
2.0
100
TJ = 25°C
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
10
1
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I D = -2.2A
VDS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 22
0
0
5
10
15
20
25
A
Q G , Total Gate Charge (nC)
Fig 17. Typical Gate Charge Vs.
Gate-to-Source Voltage
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IRF7307QPbF
P-Channel
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
100
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.3
0.6
0.9
1.2
10
1ms
1
A
1.5
TA = 25 °C
TJ = 150 °C
Single Pulse
1
10
100
-VDS , Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
Fig 18. Typical Source-Drain Diode
Forward Voltage
Fig 19. Maximum Safe Operating Area
RD
VDS
5.0
VGS
4.0
-ID , Drain Current (A)
10ms
D.U.T.
RG
-
+
3.0
VDD
-4.5V
2.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
0.0
Fig 21a. Switching Time Test Circuit
25
50
75
100
TC , Case Temperature
125
150
( °C)
VDS
90%
Fig 20. Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
10%
VGS
td(on)
50KΩ
12V
t d(off)
tf
Fig 21b. Switching Time Waveforms
.2μF
.3μF
D.U.T.
+VDS
QG
-4.5V
VGS
QGS
-3mA
QGD
VG
IG
ID
Current Sampling Resistors
Fig 22a. Gate Charge Test Circuit
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Fig 22b. Basic Gate Charge Waveform
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IRF7307QPbF
N & P-Channel
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.1
0.0001
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7307QPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
+
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
[ISD ]
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 24. For N and P Channel HEXFETS
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IRF7307QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
5
H
1
2
3
0.25 [.010]
4
A
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
8X b
0.25 [.010]
A
A1
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
e1
6X
MILLIMETERS
MIN
A
E
INCHES
DIM
B
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INTERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = ASS EMBLY SIT E CODE
LOT CODE
PART NUMBER
Note:
1. For an Automotive Qualified version of this part please see : http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRF7307QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRF7307QPbF
†
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
Comment
• Updated data sheet based on corporate template.
9/3/2014
• Added Qual level on page 11.
• Added ordering information and updated to reflect the End-Of-life (EOL) of the Tube option (EOL notice #529) on page1.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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