PD - 95296
IRF7317PbF
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
l Lead-Free
Description
l
l
S1
N-CHANNEL MOSFET
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
P-CHANNEL MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Top View
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
N-Ch
P-Ch
20V
-20V
VDSS
RDS(on) 0.029Ω 0.058Ω
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA = 25°C
TA = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V DS
V GS
IDM
IS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Maximum
P-Channel
N-Channel
20
Units
-20
± 12
6.6
5.3
26
2.5
-5.3
-4.3
-21
-2.5
2.0
1.3
100
4.1
A
W
150
-2.9
0.20
mJ
A
mJ
V/ ns
5.0
-5.0
-55 to + 150 °C
Symbol
Limit
Units
RθJA
62.5
°C/W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
5/25/04
IRF7317PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V (BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
V GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
I GSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
20
-20
0.7
-0.7
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Typ. Max.
0.027
0.031
0.023 0.029
0.030 0.046
0.049 0.058
0.082 0.098
20
5.9
1.0
-1.0
5.0
-25
±100
18
27
19
29
2.2 3.3
4.0 6.1
6.2 9.3
7.7 12
8.1 12
15
22
17
25
40
60
38
57
42
63
31
47
49
73
900
780
430
470
200
240
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 6.0A
VGS = 2.7V, ID = 5.2A
VGS = -4.5V, ID = -2.9A
VGS = -2.7V, ID = -1.5A
VDS = VGS, I D = 250µA
VDS = VGS, I D = -250µA
VDS = 10V, I D = 6.0A
VDS = -10V, I D = -1.5A
VDS = 16V, V GS = 0V
VDS = -16V, VGS = 0V
VDS = 16V, VGS = 0V, T J = 55°C
VDS = -16V, V GS = 0V, TJ = 55°C
VGS = ±12V
N-Channel
I D = 6.0A, V DS = 10V, VGS = 4.5V
P-Channel
I D = -2.9A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.0Ω,
RD = 10Ω
P-Channel
VDD = -10V, ID = -2.9A, RG = 6.0Ω,
RD = 3.4Ω
N-Channel
V GS = 0V, V DS = 15V, = 1.0MHz
P-Channel
V GS = 0V, V DS = -15V, = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
2.5
-2.5
A
26
-21
0.72 1.0
TJ = 25°C, IS = 1.7A, VGS = 0V
V
-0.78 -1.0
TJ = 25°C, IS = -2.9A, VGS = 0V
52
77
N-Channel
ns
47
71
TJ = 25°C, I F =1.7A, di/dt = 100A/µs
58
86
P-Channel
nC
TJ = 25°C, I F = -2.9A, di/dt = 100A/µs
49
73
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 22 )
Surface mounted on FR-4 board, t ≤ 10sec.
N-Channel ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V (BR)DSS, TJ ≤ 150°C
N-Channel Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.9A.
IRF7317PbF
N-Channel
100
100
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM 1.50V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
1.50V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
1.50V
20µs PULSE WIDTH
TJ = 150 °C
1
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
10
1
0.1
VDS , Drain-to-Source Voltage (V)
TJ = 25 ° C
TJ = 150 ° C
10
1
1.5
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM 1.50V
TOP
TOP
V DS = 10V
20µs PULSE WIDTH
2.0
2.5
3.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
TJ = 150 ° C
10
TJ = 25 ° C
1
0.4
V GS = 0 V
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
1.6
IRF7317PbF
RDS (on) , Drain-to-Source On Resistance (Ω)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
N-Channel
ID = 6.0A
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.032
V GS = 2.7V
0.028
0.024
VGS = 4.5V
0.020
0
TJ , Junction Temperature ( °C)
20
30
ID , Drain Current (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 5. Normalized On-Resistance
Vs. Temperature
0.05
300
0.04
0.03
ID = 6.6A
0.02
0.01
0
2
4
6
VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
8
A
EAS , Single Pulse Avalanche Energy (mJ)
RDS (on) , Drain-to-Source On Resistance (Ω)
10
TOP
250
BOTTOM
ID
1.8A
3.3A
4.1A
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
150
A
IRF7317PbF
N-Channel
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = C ds + C gd
1200
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
1600
Coss
800
Crss
400
0
1
10
100
A
ID = 6.0A
VDS = 10V
8
6
4
2
0
0
5
10
15
20
25
30
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7317PbF
100
P-Channel
100
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
TOP
TOP
-1.50V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
1
10
-VDS , Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics
Fig 13. Typical Output Characteristics
100
100
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
20µs PULSE WIDTH
TJ = 150 ° C
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
TJ = 25 ° C
TJ = 150 ° C
10
1
1.5
-1.50V
1
V DS = -10V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
-VGS , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
5.0
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode
Forward Voltage
1.4
IRF7317PbF
P-Channel
I D = -2.9A
1.5
1.0
0.5
V GS = -4.5V
0.0
-60
-40
-20
0
20
40
60
80
0.8
RDS(on) , Drain-to-Source On Resistance ( Ω )
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
0.6
V GS = -2.7V
0.4
0.2
VGS = -4.5V
A
0.0
100 120 140 160
0
4
TJ , Junction Temperature (°C)
12
-ID , Drain Current (A)
0.07
0.06
I D = -5.3A
0.04
0.03
2.0
4.0
6.0
V GS , Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
8.0
A
EAS , Single Pulse Avalanche Energy (mJ)
400
0.0
20
Fig 17. Typical On-Resistance Vs. Drain
Current
0.08
0.05
16
-I D , Drain Current (A)
Fig 16. Normalized On-Resistance
Vs. Temperature
RDS(on) , Drain-to-Source On Resistance ( Ω )
8
ID
-1.3A
-2.3A
BOTTOM -2.9A
TOP
300
200
100
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
150
A
IRF7317PbF
1400
10
1000
-VGS , Gate-to-Source Voltage (V)
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
1200
C, Capacitance (pF)
P-Channel
Ciss
800
Coss
600
400
Crss
200
0
1
10
100
A
I D = -2.9A
VDS = -16V
8
6
4
2
A
0
0
5
10
15
20
25
30
Q G , Total Gate Charge (nC)
- -V
DS , Drain-to-Source Voltage (V)
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7317PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
A
INCHES
MAX
MIN
.0532
.0688
1.35
A1 .0040
6
8
7
6
5
1
2
3
4
H
E
0.25 [.010]
A
e
e1
8X b
0.10
0.25
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
0.25 [.010]
.0098
MAX
1.75
b
e1
6X
MILLIMET ERS
MIN
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
IRF7317PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/04
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
