IRF7322D1

PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7 K 3 6 4 5 VDSS = -20V RDS(on) = 0.058Ω D D Schottky Vf = 0.39V Top View Description The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. SO-8 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current À Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range Maximum Units -5.3 -4.3 -43 2.0 1.3 16 ± 12 -5.0 -55 to +150 A W mW/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Junction-to-Ambient à Maximum Units 62.5 °C/W Notes: À Repetitive rating; pulse width limited by maximum junction temperature (see figure 9) Á ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C  Pulse width ≤ 300µs; duty cycle ≤ 2% à Surface mounted on FR-4 board, t ≤ 10sec. www.irf.com 1 10/18/04 IRF7322D1 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS RDS(on) Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 — — -0.70 — — — — — — — — — — — — — — — Typ. — 0.049 0.082 — 5.9 — — — — 19 4.0 7.7 15 40 42 49 780 470 240 Max. Units Conditions — V VGS = 0V, ID = -250µA 0.062 VGS = -4.5V, ID = -2.9A ƒ Ω 0.098 VGS = -2.7V, ID = -1.5A ƒ — V VDS = V GS, ID = -250µA — S VDS = -10V, ID = -1.5A -1.0 VDS = -16V, VGS = 0V µA -25 VDS = -16V, VGS = 0V, TJ = 55°C 100 VGS = -12.0V nA -100 VGS = 12.0V 29 ID = -2.9A 6.1 nC VDS = -16V 12 VGS = -4.5V (see figure 6)  22 VDD = -10V 60 ID = -2.9A ns 63 RG = 6.0Ω 73 RD = 3.4Ω  — VGS = 0V — pF VDS = -15V — ƒ = 1.0MHz (see figure 5) MOSFET Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Body Diode Forward Voltage trr Reverse Recovery Time (Body Diode) Qrr Reverse Recovery Charge Min. Typ. Max. Units — — -2.5 A — — -21 — — -1.2 V — 47 71 ns — 49 73 nC Conditions TJ = 25°C, IS = -2.9A, VGS = 0V TJ = 25°C, IF = -2.9A di/dt = 100A/µs  Schottky Diode Maximum Ratings IF(av) ISM Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Max. Units. 2.7 A 2 120 11 A Conditions 50% Duty Cycle. Rectangular Wave, TA = 25°C See Fig. 14 TA = 70°C 5µs sine or 3µs Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied Schottky Diode Electrical Specifications VFM Parameter Max. Forward voltage drop IRM Max. Reverse Leakage current Ct dv/dt Max. Junction Capacitance Max. Voltage Rate of Charge 2 Max. Units 0.50 0.62 V 0.39 0.57 0.02 mA 8 92 pF 3600 V/ µs Conditions IF = 1.0A, TJ = 25°C IF = 2.0A, TJ = 25°C IF = 1.0A, TJ = 125°C IF = 2.0A, TJ = 125°C . VR = 20V TJ = 25°C TJ = 125°C VR = 5Vdc ( 100kHz to 1 MHz) 25°C Rated VR www.irf.com IRF7322D1 Power Mosfet Characteristics 100 100 VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V TOP TOP 10 -1.50V 1 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 -1.50V 1 0.1 0.1 10 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 100 TJ = 25 ° C TJ = 150 ° C 10 V DS = -10V 20µs PULSE WIDTH 2.5 3.0 3.5 4.0 4.5 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 2.0 1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 1 1.5 20µs PULSE WIDTH TJ = 150 ° C I D = -2.9A 1.5 1.0 0.5 V GS = -4.5V 0.0 5.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7322D1 Power Mosfet Characteristics 1400 1000 -VGS , Gate-to-Source Voltage (V) 1200 C, Capacitance (pF) 10 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 800 Coss 600 400 Crss 200 0 A 1 10 I D = -2.9A VDS = -16V 8 6 4 2 A 0 100 0 5 -VDS , Drain-to-Source Voltage (V) 20 25 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 15 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 TJ = 25 ° C 1 0.1 0.2 4 10 0.6 0.8 1.0 1.2 10 1ms 10ms TC = 25 ° C TJ = 150 ° C Single Pulse V GS = 0 V 0.4 100us 1.4 1 0.1 1 10 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 100 www.irf.com IRF7322D1 Power Mosfet Characteristics Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.08 0.6 V GS = -2.7V 0.4 0.2 VGS = -4.5V 0.0 0 4 8 12 16 -I D , Drain Current (A) Fig 10. Typical On-Resistance Vs. Drain Current www.irf.com 20 A RDS (on) , Drain-to-Source On Resistance (Ω) RDS (on) , Drain-to-Source On Resistance (Ω) 0.8 0.07 0.06 I D = -5.3A 0.05 0.04 0.03 A 0.0 2.0 4.0 6.0 8.0 V GS , Gate-to-Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage 5 IRF7322D1 Schottky Diode Characteristics 100 Instantaneous Forward Current - IF (A) Reverse Current - IR (mA) 10 10 J  
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  0.1 
 0.01  0.001 0.0001 1 ) 0 4 8 12 16 20      R   TJ = 150°C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage TJ = 125°C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - V (V) Forward Voltage Drop - VFFM (V) Fig. 12 - Typical Forward Voltage Drop Characteristics Allowable Ambient Temperature - (°C) TJ = 25°C 160 V r = 20V R thJA = 62.5°C/W Square wave 140 120 100 80 DC D = 3/4 D = 1/2 D =1/3 D = 1/4 D = 1/5 60 40 20 A 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Average Forward Current - I F(AV) (A) Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 6 www.irf.com IRF7322D1 SO-8 (Fetky) Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 6 7 6 5 H 0.25 [.010] 6X 2 3 A MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 .1574 3.80 4.00 E .1497 e .050 BASIC e1 4 e e1 C 1.27 BASIC .025 BASIC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° y 0.10 [.004] 0.25 [.010] MAX K x 45° A 8X b MILLIMET ERS MIN A E 1 INCHES DIM B A1 8X c 8X L 7 C A B F OOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUTLINE CONFORMS TO JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A SUBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (FET KY) INT ERNAT IONAL RECTIFIER LOGO www.irf.com XXXX 807D1 DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = ASSEMBLY SIT E CODE LOT CODE PART NUMBER 7 IRF7322D1 SO-8 (Fetky) Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 8 www.irf.com