PD - 95196A
IRF7328PbF
HEXFET® Power MOSFET
lÿÿTrench Technology
lÿÿUltra Low On-Resistance
lÿ Dual P-Channel MOSFET
lÿ Available in Tape & Reel
lÿ Lead-Free
VDSS
-30V
RDS(on) max
ID
21mΩ@VGS = -10V
-8.0A
32mΩ@VGS = -4.5V
-6.8A
Description
New trench HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
SO-8
Top View
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-30
-8.0
-6.4
-32
2.0
1.3
16
± 20
-55 to + 150
V
W
W
mW/°C
V
°C
Max.
Units
62.5
°C/W
A
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
1
12/03/10
IRF7328PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
-1.0
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.018
17
26.8
–––
–––
–––
–––
–––
–––
52
9.8
8.3
13
15
198
98
2675
409
262
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
21
VGS = -10V, ID = -8.0A
mΩ
32
VGS = -4.5V, ID = -6.8A
-2.5
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -8.0A
-15
VDS = -24V, VGS = 0V
µA
-25
VDS = -24V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
78
ID = -8.0A
–––
nC
VDS = -15V
–––
VGS = -10V
20
VDD = -15V, VGS = -10.0V
23
ID = -1.0A
ns
297
RG = 6.0Ω
147
RD = 15Ω
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
-2.0
-32
–––
–––
–––
–––
37
36
-1.2
56
54
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, IF = -2.0A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t ≤ 10sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7328PbF
100
VGS
TOP
-10.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
10
1
-2.7V
10
-2.7V
1
0.1
0.1
1
10
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
VGS
-10.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
100
0.1
100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 150° C
TJ = 25 ° C
1
V DS= -15V
20µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
10
1
-VDS, Drain-to-Source Voltage (V)
6.0
2.0
ID = -8.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7328PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
Ciss
2000
1000
Coss
Crss
0
1
10
14
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
4000
ID = -8A
V DS=-24V
V DS=-15V
12
10
8
6
4
2
0
100
-VDS , Drain-to-Source Voltage (V)
0
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150° C
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
TJ = 25 ° C
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
100us
10
1ms
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
-VSD ,Source-to-Drain Voltage (V)
4
10
1.6
1
0.1
10ms
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7328PbF
10.0
VDS
VGS
-ID , Drain Current (A)
8.0
RD
D.U.T.
RG
-
+
VDD
6.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
TTCA , Case Temperature ( ° C)
150
10%
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
10
0.10
PDM
0.05
0.02
0.01
1
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7328PbF
RDS ( on ) , Drain-to-Source On Resistance Ω
( )
(
RDS(on), Drain-to -Source On ResistanceΩ)
0.060
0.050
0.040
ID = -8.0A
0.030
0.020
0.010
0.000
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.100
0.075
0.050
VGS = -4.5V
VGS = -10V
0.025
0.000
0
10
30
40
50
60
70
-ID , Drain Current ( A )
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
20
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
10 V
QGS
QGD
12V
.2µF
.3µF
D.U.T.
+VDS
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF7328PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
5
A
8
6
7
6
5
H
1
2
3
0.25 [.010]
4
A
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
8X b
A1
MAX
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
0.25 [.010]
MILLIMET ERS
MIN
A
E
INCHES
DIM
B
θ
0.10 [.004]
y
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENSION: MILLIMET ER
8X 0.72 [.028]
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGTH OF LEAD FOR S OLDERING T O
A SUBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
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7
IRF7328PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/2010
8
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
