PD - 95300
IRF7379PbF
HEXFET® Power MOSFET
l
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Complimentary Half Bridge
Surface Mount
Fully Avalanche Rated
Lead-Free
S1
N-CHANNEL MOSFET
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
VDSS
N-Ch
P-Ch
30V
-30V
RDS(on) 0.045Ω 0.090Ω
P-CHANNEL MOSFET
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
VSD
ID @ TA = 25°C
ID @ TA = 70°C
I DM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
30
5.8
4.6
46
-30
-4.3
-3.4
-34
2.5
0.02
± 20
5.0
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
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Maximum Junction-to-Ambient
Max.
Units
50
°C/W
1
10/7/04
IRF7379PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
LS
Internal Drain Inductace
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max.
N-Ch 30
—
—
P-Ch -30 —
—
N-Ch — 0.032 —
P-Ch — -0.037 —
— 0.038 0.045
N-Ch
— 0.055 0.075
— 0.070 0.090
P-Ch
— 0.130 0.180
N-Ch 1.0 —
—
P-Ch -1.0 —
—
N-Ch 5.2 —
—
P-Ch 2.5 —
—
N-Ch —
— 1.0
P-Ch —
— -1.0
N-Ch —
—
25
P-Ch —
— -25
N-P ––
— ±100
N-Ch —
—
25
P-Ch —
—
25
N-Ch —
— 2.9
P-Ch —
— 2.9
N-Ch —
— 7.9
P-Ch —
— 9.0
N-Ch — 6.8 —
P-Ch —
11
—
N-Ch —
21
—
P-Ch —
17
—
N-Ch —
22
—
P-Ch —
25
—
N-Ch — 7.7 —
P-Ch —
18
—
N-P — 4.0 —
N-P — 6.0 —
N-Ch — 520 —
P-Ch — 440 —
N-Ch — 180 —
P-Ch — 200 —
N-Ch —
72
—
P-Ch —
93
—
Units
V
V/°C
Ω
V
S
µA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, I D = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, I D = -1mA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.9A
VGS = -10V, ID =- 4.3A
VGS = -4.5V, ID =- 3.7A
VDS = VGS, ID = 250µA
VDS = VGS, I D = -250µA
VDS = 15V, ID = 2.4A
VDS = -24V, ID = -1.8A
VDS = 24 V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24 V, VGS = 0V, TJ = 125°C
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = ± 20V
N-Channel
ID = 2.4A, VDS = 24V, VGS = 10V
P-Channel
ID = -1.8A, VDS = -24V, VGS = -10V
N-Channel
VDD = 15V, I D = 2.4A, RG = 6.0Ω,
RD = 6.2Ω
P-Channel
VDD = -15V, ID = -1.8A, RG = 6.0Ω,
RD = 8.2Ω
Between lead, 6mm (0.25in.) from
package and center of die contact
N-Channel
VGS = 0V, V DS = 25V, ƒ = 1.0MHz
P-Channel
VGS = 0V, V DS = -25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
I SM
Pulsed Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 3.1
—
— -3.1
A
—
—
46
—
— -34
—
— 1.0
TJ = 25°C, IS = 1.8A, VGS = 0V
V
—
— -1.0
TJ = 25°C, IS = -1.8A, VGS = 0V
—
47
71
N-Channel
ns
—
53
80
TJ = 25°C, IF = 2.4A, di/dt = 100A/µs
—
56
84
P-Channel
nC
TJ = 25°C, IF = -1.8A, di/dt = -100A/µs
—
66
99
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature. ( See fig. 10 )
P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
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IRF7379PbF
N-Channel
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
20µs PULSE WIDTH
TJ = 25°C
1
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
1
10
100
A
4.5V
10
20µs PULSE WIDTH
TJ = 150°C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
10
100
A
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
VDS = 15V
20µs PULSE WIDTH
10
4
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
A
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
A
2.5
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7379PbF
I D = 4.0A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
R DS (on), Drain-to-Source On Resistance ( Ω )
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
N-Channel
0.20
0.16
0.12
VGS = 4.5V
0.08
VGS = 10V
0.04
0.00
2
4
8
10
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 5. Normalized On-Resistance
Vs. Temperature
R DS (on), Drain-to-Source On Resistance ( Ω )
6
I D , Drain Current (A)
TJ , Junction Temperature (°C)
0.08
0.07
0.06
0.05
ID = 5.8A
0.04
0.03
0
4
8
12
16
VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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IRF7379PbF
N-Channel
1000
V GS , Gate-to-Source Voltage (V)
800
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
I D = 2.4A
VDS = 24V
16
Ciss
600
12
C oss
400
Crss
200
0
1
10
100
A
8
4
FOR TEST CIRCUIT
SEE FIGURE 11
0
0
VDS , Drain-to-Source Voltage (V)
5
10
15
20
25
Q G , Total Gate Charge (nC)
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
PDM
0.02
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
A
IRF7379PbF
100
P-Channel
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
10
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
20µs PULSE WIDTH
TJ = 150°C
1
10
A
100
-VDS , Drain-to-Source Voltage (V)
Fig 11. Typical Output Characteristics
Fig 12. Typical Output Characteristics
100
100
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
-4.5V
1
0.1
100
-VDS , Drain-to-Source Voltage (V)
TJ = 25°C
TJ = 150°C
10
10
TJ = 150°C
TJ = 25°C
1
VDS = -15V
20µs PULSE WIDTH
1
4
5
6
7
8
9
10
-VGS , Gate-to-Source Voltage (V)
Fig 13. Typical Transfer Characteristics
6
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-I D , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
A
VGS = 0V
0.1
0.0
0.3
0.6
0.9
1.2
A
1.5
-VSD , Source-to-Drain Voltage (V)
Fig 14. Typical Source-Drain Diode
Forward Voltage
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IRF7379PbF
2.0
R DS (on), Drain-to-Source On Resistance ( Ω )
R DS(on) , Drain-to-Source On Resistance
(Normalized)
P-Channel
I D = -3.0A
1.5
1.0
0.5
VGS = -10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
0.50
0.40
0.30
VGS = -4.5V
0.20
VGS = -10V
0.10
0.00
0
2
6
8
10
12
14
Fig 16. Typical On-Resistance Vs. Drain
Current
Fig 15. Normalized On-Resistance
Vs. Temperature
R DS (on), Drain-to-Source On Resistance ( Ω )
4
-ID , Drain Current (A)
TJ , Junction Temperature (°C)
0.16
0.14
0.12
0.10
ID = -4.3A
0.08
0.06
0
4
8
12
16
-VGS , Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance Vs. Gate
Voltage
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7
IRF7379PbF
1000
20
600
-VGS , Gate-to-Source Voltage (V)
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
800
C, Capacitance (pF)
P-Channel
Ciss
Coss
400
Crss
200
0
1
10
- -V
DS
100
A
ID = -3.0A
VDS = -24V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 22
0
0
5
10
15
20
A
25
Q G , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
Fig 19. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 18. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
PDM
0.02
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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IRF7379PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
5
H
E
1
2
3
0.25 [.010]
4
A
e
e1
MIN
1.35
1.75
8X b
MAX
A1 .0040
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
0.25 [.010]
MILLIMET ERS
MAX
.0688
e1
6X
INCHES
MIN
.0532
A
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
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9
IRF7379PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
10
www.irf.com
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
