PD - 95301
IRF7403PbF
HEXFET® Power MOSFET
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Generation V Technology
Ultra Low On-Resistance
N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = 30V
RDS(on) = 0.022Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
I D @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
10 Sec. Pulsed Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
9.7
8.5
5.4
34
2.5
0.02
±20
5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient
Typ.
Max.
Units
50
°C/W
9/30/04
IRF7403PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
30
1.0
8.4
Typ.
0.024
10
37
42
40
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
2.5
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1200
450
160
V(BR)DSS
IGSS
4.0
Max. Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.022
VGS = 10V, ID = 4.0A
Ω
0.035
VGS = 4.5V, I D = 3.4A
V
VDS = V GS, ID = 250µA
S
VDS = 15V, ID = 4.0A
1.0
VDS = 24V, V GS = 0V
µA
25
VDS = 24V, V GS = 0V, TJ = 125°C
100
VGS = 20V
nA
-100
VGS = -20V
57
ID = 4.0A
6.8
nC VDS = 24V
18
VGS = 10V, See Fig. 6 and 12
VDD = 15V
ID = 4.0A
ns
RG = 6.0Ω
RD = 3.7Ω, See Fig. 10
D
nH
Between lead tip
and center of die contact
pF
VGS = 0V
VDS = 25V
= 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
3.1
34
52
93
1.0
78
140
A
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = 2.0A, V GS = 0V
TJ = 25°C, IF = 4.0A
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ 4.0A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,
Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature. ( See fig. 11 )
TJ ≤ 150°C
IRF7403PbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
100
4.5V
10
20µs PULSE WIDTH
TJ = 25°C
1
0.01
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
0.1
1
10
A
100
4.5V
10
20µs PULSE WIDTH
TJ = 150°C
1
0.01
100
0.1
Fig 1. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
V DS = 50V
15V
20µs PULSE WIDTH
4
5
6
7
8
9
A
100
Fig 2. Typical Output Characteristics
2.0
1000
10
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
100
1
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
I D = 6.7A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF7403PbF
2400
V GS , Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
16
Ciss
1600
I D = 4.0A
VDS = 24V
12
Coss
1200
800
Crss
400
0
1
10
100
8
4
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
0
10
VDS , Drain-to-Source Voltage (V)
30
40
50
60
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
20
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
3.0
100us
10
1ms
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
A
IRF7403PbF
VDS
VGS
10.0
ID , Drain Current (A)
D.U.T.
RG
8.0
RD
+
- VDD
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6.0
Fig 10a. Switching Time Test Circuit
4.0
VDS
90%
2.0
0.0
25
50
75
100
125
10%
VGS
150
TC , Case Temperature ( °C)
td(on)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7403PbF
Current Regulator
Same Type as D.U.T.
50KΩ
QG
.2µF
12V
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 12a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
IRF7403PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
+
-
*
V DD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For N-Channel HEXFETS
[ISD ]
IRF7403PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
A
INCHES
MAX
MIN
.0532
.0688
1.35
A1 .0040
8
6
7
6
5
H
E
1
2
3
0.25 [.010]
4
A
e
e1
0.25 [.010]
0.10
0.25
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
8X b
.0098
MAX
1.75
b
e1
6X
MILLIMET ERS
MIN
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
IRF7403PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
