IRF7413QTRPBF

END OF LIFE PD - 96112B IRF7413QPbF l l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free 1 8 S 2 7 D S 3 6 D G 4 5 D Description IRF7413QPbF VDSS = 30V RDS(on) = 0.011Ω Top View These HEXFET® Power MOSFET's in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Base part number A A D S SO-8 Standard Pack Orderable part number Package Type Form Quantity IRF7413QTRPbF SO-8 Tape and Reel IRF7413QPbF SO-8 Tube EOL Notice Replacement Part Number 4000 EOL 529 95 EOL 529 Please search the EOL part number on IR’s website for guidance Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C Parameter Max c dv/dt Pulsed Drain Current Power Dissipation Linear Derating Factor Single Pulse Avalanche Energency Peak Diode Recovery dv/dt TJ, TSTG Junction and Storage Temperature Range EAS e Units 30 Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V d V ± 20 13 9.2 58 2.5 W 0.02 260 mW/°C mJ 5.0 V/ns -55 to +150 °C A Thermal Resistance Ratings Symbol RθJL RθJA www.irf.com Parameter Junction-to-Drain Lead h Junction-to-Ambient gh Typ Max ––– 20 ––– 50 Units °C/W 1 06/17/14 END OF LIFE IRF7413QPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS ΔV(BR)DSS/ΔTJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min Typ Max Units 30 ––– ––– ––– 1.0 10 ––– ––– ––– ––– ––– ––– ––– 1.2 ––– ––– ––– ––– ––– ––– ––– ––– 0.034 ––– ––– ––– ––– ––– ––– ––– ––– 52 6.1 16 ––– 8.6 50 52 46 1800 680 240 ––– ––– 0.011 0.018 3.0 ––– 12 25 -100 100 79 9.2 23 3.7 ––– ––– ––– ––– ––– ––– ––– V V/°C Min. Typ. Max. Units Ω V S μA nA nC ns pF Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 7.3A VGS = 4.5V, ID = 3.7A VDS = VGS, ID = 250μA VDS = 10V, ID = 3.7A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V ID = 7.3A VDS = 24V VGS = 10V, See Fig. 6 and 9 f f f VDD = 15V ID = 7.3A RG = 6.2 Ω RG = 2.0Ω, See Fig. 10 VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 f Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge c ––– ––– 3.1 ––– ––– 58 ––– ––– ––– ––– 74 200 1.0 110 300 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 7.3A, VGS = 0V TJ = 25°C, IF = 7.3A di/dt = 100A/μs e e Notes:  Repetitive rating; pulse width limited by ƒ ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, ‚ Starting TJ = 25°C, L =9.8mH „ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) RG = 25Ω, IAS =7.3A. (See Figure 12) www.irf.com T J ≤ 150°C … Surface mounted on FR-4 board † Rθ is measured at TJ approximately 90°C 2 END OF LIFE 100 IRF7413QPbF 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 20μs PULSE WIDTH TJ = 25°C A 1 0.1 1 3.0V 10 20μs PULSE WIDTH TJ = 150°C A 1 0.1 10 1 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 150°C TJ = 25°C 10 V DS = 10V 20μs PULSE WIDTH 1 3.0 3.5 4.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 V DS, Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) A 4.5 I D = 7.3A 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 END OF LIFE IRF7413QPbF 3200 V GS , Gate-to-Source Voltage (V) 2800 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd Coss 12 1600 1200 Crss 800 V DS = 24V V DS = 15V 16 2400 2000 I D = 7.3A 400 0 1 10 100 8 4 FOR TEST CIRCUIT SEE FIGURE 9 0 A 0 10 VDS , Drain-to-Source Voltage (V) 30 40 50 60 A Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 25°C ID , Drain Current (A) ISD , Reverse Drain Current (A) 20 TJ = 150°C 100 10 VGS = 0V 1 0.4 1.2 2.0 2.8 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com A 3.6 100us 10 1ms TC = 25 ° C TJ = 150 ° C Single Pulse 1 0.1 10ms 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 END OF LIFE IRF7413QPbF V DS QG 10V QGS VGS QGD D.U.T. RG VG RD + - VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 50KΩ 12V 90% .2μF .3μF + V - DS D.U.T. 10% VGS VGS 3mA td(on) IG tr t d(off) tf ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 PDM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7413QPbF 15V L VDS D.U.T RG IAS 20V DRIVER + - VDD 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) END OF LIFE 600 TOP 500 BOTTOM ID 3.3A 6.0A 7.3A 400 300 200 100 0 25 50 75 100 125 150 Starting T J, Junction Temperature ( oC) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms www.irf.com 6 END OF LIFE IRF7413QPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  RG • • • • Driver Gate Drive Period P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS www.irf.com 7 END OF LIFE IRF7413QPbF SO-8 Package Details Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 6 7 H E 1 6X 2 3 0.25 [.010] 4 A e e1 8X b 0.25 [.010] A MILLIMETERS MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC e1 A 5 INCHES MIN MAX .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° C A1 y 0.10 [.004] 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 8 END OF LIFE IRF7413QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF7413QPbF END OF LIFE † Qualification Information Industrial † Qualification level (per JEDEC JESD47F††guidelines) Moisture Sensitivity Level MSL1 SO-8 RoHS Compliant (per JEDEC J-STD-020D††) Yes † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. Revision History Date 6/17/2014 Comments • Added ordering information to reflect the End-Of-life IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ www.irf.com 10