IRF7421D1TR

PD- 91411D IRF7421D1 FETKYä MOSFET / Schottky Diode l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V RDS(on) = 0.035Ω Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS@10Và Pulsed Drain Current À Power Dissipation à Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range Maximum Units 5.8 4.6 46 2.0 1.3 16 ± 20 -5.0 -55 to +150 A W W/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Maximum Units 62.5 °C/W Junction-to-Ambient à Notes: À Repetitive rating; pulse width limited by maximum junction temperature (see figure 11) Á ISD ≤ 4.1A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C  Pulse width ≤ 300µs; duty cycle ≤ 2% à Surface mounted on FR-4 board, t ≤ 10sec. www.irf.com 1 10/18/04 2 IRF7421D1 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS RDS(on) Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 30 — — 1.0 4.6 — — — — — — — — — — — — — — Typ. — 0.026 0.040 — — — — — — 18 2.2 5.9 6.7 27 20 16 510 200 84 Max. Units Conditions — V VGS = 0V, ID = 250µA 0.035 VGS = 10V, ID = 4.1A ƒ Ω 0.060 VGS = 4.5V, ID = 2.1A ƒ — V VDS = V GS, ID = 250µA — S VDS = 15V, ID = 2.1A 1.0 VDS = 24V, VGS = 0V µA 25 VDS = 24V, V GS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V 27 ID = 4.1A 3.3 nC VDS = 24V 8.9 VGS = 10V (see figure 10)  — VDD = 15V — ID = 4.1A ns — RG = 6.2Ω — RD = 3.7Ω  — VGS = 0V — pF VDS = 25V — ƒ = 1.0MHz (see figure 9) MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) — — 3.1 A I SM Pulsed Source Current (Body Diode) — — 33 VSD Body Diode Forward Voltage — — 1.0 V trr Reverse Recovery Time (Body Diode) — 57 86 ns Q rr Reverse Recovery Charge — 93 140 nC Conditions TJ = 25°C, IS = 4.1A, V GS = 0V TJ = 25°C, IF = 4.1A di/dt = 100A/µs  Schottky Diode Maximum Ratings IF(av) I SM Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Max. Units. 1.7 A 1.2 120 11 A Conditions 50% Duty Cycle. Rectangular Wave, TA = 25°C TA = 70°C 5µs sine or 3µs Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied Schottky Diode Electrical Specifications V FM Parameter Max. Forward voltage drop IRM Max. Reverse Leakage current Ct dv/dt Max. Junction Capacitance Max. Voltage Rate of Charge 2 Max. Units 0.50 0.62 V 0.39 0.57 0.06 mA 16 110 pF 3600 V/ µs Conditions IF = 1.0A, TJ = 25°C IF = 2.0A, TJ = 25°C IF = 1.0A, TJ = 125°C IF = 2.0A, TJ = 125°C . VR = 30V TJ = 25°C TJ = 125°C VR = 5Vdc ( 100kHz to 1 MHz) 25°C Rated VR www.irf.com 2 IRF7421D1 Power Mosfet Characteristics 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP TOP 10 3.0V 1 0.1 20µs PULSE WIDTH TJ = 25°C A 1 10 3.0V 20µs PULSE WIDTH TJ = 150°C A 1 10 0.1 V DS , Drain-to-Source Voltage (V) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 1 VDS , Drain-to-Source Voltage (V) TJ = 150°C TJ = 25°C 10 V DS = 10V 20µs PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A 6.0 10 TJ = 150°C TJ = 25°C VGS = 0V 1 0.4 0.8 1.2 1.6 2.0 A 2.4 VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 IRF7421D1 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 I D = 4.1A 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 A RDS (on) , Drain-to-Source On Resistance (Ω) Power Mosfet Characteristics 0.2    0.1   0.0 100 120 140 160 0 5 TJ , Junction Temperature (°C) I Fig 5. Normalized On-Resistance Vs. Temperature 25 30 35 , , Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 0.06 I D , Drain Current (A) RDS (on) , Drain-to-Source On Resistance (Ω) 20 100 0.05 0.04 I = 5.8A 0.03 10 3 6 9 12 Fig 7. Typical On-Resistance Vs. Gate Voltage 15 A 100µs 1ms 1 0.02 V /5 , Gate-to-Source Voltage (V) 4 15 Fig 6. Typical On-Resistance Vs. Drain Current 0.07 0.01 10 0.1 10ms TA = 25°C TJ = 150°C Single Pulse 0.1 A 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7421D1 Power Mosfet Characteristics 1000 V GS , Gate-to-Source Voltage (V) 800 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V DS = 24V V DS = 15V 16 Ciss 600 I D = 4.1A 12 Coss 400 Crss 200 0 10 4 FOR TEST CIRCUIT SEE FIGURE 9 0 A 1 8 0 100 5 VDS , Drain-to-Source Voltage (V) 10 15 20 25 30 Q G , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 0.0001 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 A IRF7421D1 Schottky Diode Characteristics 100 Reverse Current - IR (mA) Instantaneous Forward Current - IF (A) 10 10 J  
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  0.1 
 0.01  0.001 0.0001 1 ) 0 5 10 15 20 25 30      R   TJ = 150°C TJ = 125°C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage TJ = 25°C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - VFM (V) Fig. 12 -Typical Forward Voltage Drop Characteristics Junction Capacitance - C T (pF) 1000 100 TJ = 25°C A 10 0 10 20 30 Reverse Voltage - V R (V) Fig.14 - Typical Junction Capacitance Vs. Reverse Voltage 6 www.irf.com IRF7421D1 SO-8 (Fetky) Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 7 6 5 6 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC e1 6X e e1 C 1.27 BAS IC .025 BAS IC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° y 0.10 [.004] 0.25 [.010] MAX K x 45° A 8X b MILLIMET ERS MIN A E INCHES DIM B A1 8X L 8X c 7 C A B FOOTPRINT NOT ES: 1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGT H OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: THIS IS AN IRF7807D1 (FETKY) INTERNATIONAL RECTIFIER LOGO www.irf.com XXXX 807D1 DATE CODE (YWW) P = DISGNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW= WEEK A = ASSEMBLY SITE CODE LOT CODE PART NUMBER 7 IRF7421D1 SO-8 (Fetky) Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04 8 www.irf.com