PD - 95305
IRF7433PbF
HEXFET® Power MOSFET
l
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Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Description
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
VDSS
RDS(on) max
ID
-12V
24mΩ@VGS = -4.5V
30mΩ@VGS = -2.5V
-8.7A
46mΩ@VGS = -1.8V
-6.3A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
-7.4A
SO-8
Top View
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
-8.9
-7.1
-36
2.5
1.6
0.02
±8
-55 to +150
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
Max.
Units
50
°C/W
1
10/12/04
IRF7433PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-12
–––
–––
-0.4
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.007
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
4.5
4.0
8.8
8.2
272
175
1877
512
310
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, I D = -1mA
24
VGS = -4.5V, ID = -8.7A
mΩ VGS = -2.5V, ID = -7.4A
30
46
VGS = -1.8V, ID = -6.3A
-0.9
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -8.7A
-1.0
VDS = -9.6V, VGS = 0V
µA
-25
VDS = -9.6V, VGS = 0V, TJ = 70°C
-100
nA VGS = -8V
100
VGS = 8V
–––
ID = -8.7A
–––
nC
VDS = -6V
–––
VGS = -4.5V
13
V
DD = -6V, VGS = -4.5V
ns
12
ID = -1.0A
408
RD = 6Ω
263
RG = 6Ω
–––
VGS = 0V
–––
pF
VDS = -10V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
-2.5
-36
–––
–––
–––
–––
36
28
-1.2
54
42
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t < 10 sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7433PbF
100
VGS
-10.0V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
100
VGS
-10.0V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
10
-1.2V
1
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
10
-1.2V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
-VDS, Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 150° C
10
TJ = 25 ° C
V DS= -10V
20µs PULSE WIDTH
2.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
100
1.5
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
1.0
1
2.5
2.0
ID = -8.7A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7433PbF
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
2800
2400
Coss = Cds + Cgd
Ciss
2000
1600
1200
800
Coss
400
Crss
-VGS , Gate-to-Source Voltage (V)
6
3200
10
4
3
2
1
0
100
0
5
15
20
25
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
10
TJ = 150 ° C
TJ = 25 ° C
1
100us
10
1ms
10ms
0.1
0.2
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
0.4
0.6
0.8
1.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
V DS=-9.6V
V DS=-6V
5
0
1
ID = -8.7A
1.2
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7433PbF
9.0
VDS
-ID , Drain Current (A)
7.5
VGS
D.U.T.
RG
6.0
RD
-
+
V DD
V GS
4.5
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
3.0
Fig 10a. Switching Time Test Circuit
1.5
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
TC , Case Temperature ( ° C)
150
10%
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
t1
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
(
RDS(on), Drain-to -Source On ResistanceΩ)
0.050
0.040
0.030
ID = -8.7A
0.020
0.010
0.0
2.0
4.0
6.0
8.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
10.0
( )
RDS ( on ) , Drain-to-Source On Resistance Ω
IRF7433PbF
0.15
0.12
VGS = -1.8V
0.09
0.06
VGS = -2.5V
0.03
VGS = -4.5V
0
0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
10 V
QGS
QGD
12V
.2µF
.3µF
D.U.T.
+VDS
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF7433PbF
1.0
300
200
ID = -250µA
Power (W)
-VGS(th) ( V )
0.8
0.6
100
0.4
0.2
-75
-50
-25
0
25
50
75
100
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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125
150
0
0.0001
0.0010
0.0100 0.1000
1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF7433PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
A
INCHES
MAX
MIN
.0532
.0688
1.35
A1 .0040
6
8
7
6
5
1
2
3
4
H
E
0.25 [.010]
A
e
e1
8X b
0.10
0.25
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
0.25 [.010]
.0098
MAX
1.75
b
e1
6X
MILLIMET ERS
MIN
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
8
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IRF7433PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04+
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