PD- 95306
IRF7450PbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
High frequency DC-DC converters
VDSS
l
l
200V
Lead-Free
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l
RDS(on) max
0.17W@VGS = 10V
ID
2.5A
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
2.5
2.0
20
2.5
0.02
± 30
11
-55 to + 150
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes through are on page 8
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1
10/12/04
IRF7450PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
200
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.26
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.17
Ω
VGS = 10V, ID = 1.5A
5.5
V
VDS = VGS, ID = 250µA
25
VDS = 200V, VGS = 0V
µA
250
VDS = 160V, VGS = 0V, TJ = 125°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
26
6.0
12
10
3.0
17
18
940
160
33
1100
66
25
Max. Units
Conditions
–––
S
VDS = 50V, ID = 1.5A
39
ID = 1.5A
9.0
nC
VDS = 160V
18
VGS = 10V,
–––
VDD = 100V
–––
ID = 1.5A
ns
–––
RG = 6.0Ω
–––
VGS = 10V
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
230
2.5
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.3
–––
–––
20
–––
–––
–––
–––
97
350
1.3
146
525
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.5A, VGS = 0V
TJ = 25°C, IF = 1.5A
di/dt = 100A/µs
D
S
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IRF7450PbF
100
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
10
TOP
1
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
0.01
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
5.0V
1
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 150 ° C
10
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
6.0
6.5
7.0
7.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
100
5.5
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
5.0
1
8.0
ID = 2.5A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7450PbF
Ciss
Coss = Cds + Cgd
Coss
Crss
100
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
1000
ID = 1.5A
VDS = 160V
VDS = 100V
VDS = 40V
16
12
8
4
10
1
10
100
1000
0
VDS, Drain-to-Source Voltage (V)
10
ID, Drain-to-Source Current (A)
100
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
20
30
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
4
0
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD , Reverse Drain Current (A)
C, Capacitance(pF)
10000
1.2
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1msec
1
T A = 25°C
10msec
T J = 150°C
0.1
Single Pulse
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7450PbF
2.5
RD
VDS
VGS
ID , Drain Current (A)
2.0
D.U.T.
RG
+
-V DD
1.5
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
VDS
0.0
90%
25
50
75
100
125
TC , Case Temperature ( °C)
150
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
PDM
t1
0.1
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS ( on) , Drain-to-Source On Resistance ( Ω )
IRF7450PbF
RDS(on) , Drain-to -Source On Resistance (Ω)
0.18
0.16
VGS = 10V
0.14
0.12
0
4
8
12
16
20
0.35
0.30
0.25
0.20
ID = 1.5A
0.15
0.10
24
6
ID , Drain Current (A)
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
600
TOP
500
BOTTOM
ID
1.1A
1.6A
2.5A
400
300
200
100
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7450PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
6
8
7
6
5
1
2
3
4
H
E
0.25 [.010]
A
e
e1
8X b
0.25 [.010]
A
MILLIMET ERS
MAX
MIN
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
MAX
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
INCHES
MIN
.0532
A
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INTERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = ASS EMBLY SIT E CODE
LOT CODE
PART NUMBER
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7
IRF7450PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 73mH
When mounted on 1 inch square copper board
max. junction temperature.
RG = 25Ω, IAS = 2.5A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
8
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
