IRF7456PBF

PD - 95249A IRF7456PbF SMPS MOSFET HEXFET® Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l Lead-Free l Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage and Current l VDSS RDS(on) max ID 20V 0.0065Ω 16A A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. Units 20 ± 12 16 13 130 2.5 1.6 0.02 -55 to + 150 V V A W W W/°C °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient„ Max. Units 50 °C/W Typical SMPS Topologies l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers Notes  through „ are on page 8 www.irf.com 1 08/08/08 IRF7456PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.024 ––– V/°C Reference to 25°C, ID = 1mA 0.00470.0065 VGS = 10V, ID = 16A ƒ Ω 0.00570.0075 VGS = 4.5V, ID = 13A ƒ 0.011 0.020 VGS = 2.8V, ID = 3.5A ƒ ––– 2.0 V VDS = VGS, ID = 250µA ––– 20 VDS = 16V, VGS = 0V µA ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C ––– 200 VGS = 12V nA ––– -200 VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 44 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 41 9.7 18 20 25 50 52 3640 1570 330 Max. Units Conditions ––– S VDS = 10V, ID = 16A 62 ID = 16A 15 nC VDS = 16V 27 VGS = 5.0V, ƒ ––– VDD = 10V ––– ID = 1.0A ns ––– RG = 6.0Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 15V ––– pF ƒ = 1.0MHz Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. Max. Units ––– ––– ––– 250 16 0.25 mJ A mJ Diode Characteristics IS ISM VSD trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– 2.5 ––– ––– 130 ––– ––– ––– ––– 48 74 A 1.2 72 110 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 2.5A, VGS = 0V TJ = 25°C, IF = 2.5A di/dt = 100A/µs ƒ D S ƒ www.irf.com IRF7456PbF 1000 1000 VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V 100 100 10 1 2.0V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 10 2.0V 1 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100.0 ID, Drain-to-Source Current (Α) T J = 150°C 10.0 T J = 25°C 1.0 VDS = 15V 20µs PULSE WIDTH 2.2 2.4 2.6 2.8 3.0 1 10 100 Fig 2. Typical Output Characteristics 2.0 0.1 20µs PULSE WIDTH TJ = 150 °C VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 2.0 VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 3.2 ID = 16A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7456PbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 4000 Ciss 3000 Coss 2000 1000 ID = 16A VDS = 16V 10 8 6 4 2 Crss 0 1 10 0 100 FOR TEST CIRCUIT SEE FIGURE 14 13 0 20 VDS , Drain-to-Source Voltage (V) 60 80 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) TJ = 150 ° C 10us 100 10 TJ = 25 ° C 1 100us 1ms 10 10ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 40 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) C, Capacitance (pF) 5000 12 VGS , Gate-to-Source Voltage (V) 6000 2.2 TA = 25 ° C TJ = 150 ° C Single Pulse 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7456PbF 20 V DS ID , Drain Current (A) V GS 15 RD D.U.T. RG + -V DD 10V 4.5V 10 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature tr td(on) t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 0.1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7456PbF RDS(on) , Drain-to -Source On Resistance (Ω) RDS (on) , Drain-to-Source On Resistance (Ω) 0.0062 VGS = 4.5V 0.0058 0.0054 0.0050 VGS = 10V 0.0046 0 20 40 60 80 100 0.012 0.010 0.008 ID = 16A 0.006 0.004 0 ID , Drain Current (A) 4 8 12 16 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS QGS .3µF D.U.T. + V - DS QGD 600 EAS , Single Pulse Avalanche Energy (mJ) 50KΩ .2µF 12V VG VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD 0.01Ω Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 A TOP 500 BOTTOM ID 7.2A 10A 16A 400 300 200 100 0 25 50 75 100 125 Starting TJ , Junction Temperature ( °C) 150 Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7456PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ,1&+(6 0,1 0$; $   $    E  F    '  (   H %$6,& H  %$6,& +   .    /  ƒ \ ƒ ',0 %  $          + >@ ( $ ; H H ;E >@ $ $ 0,//,0(7(56 0,1 0$;             %$6,& %$6,&       ƒ ƒ .[ƒ & \ >@ ;/ & $ % 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( ;F  )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5)026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'(