IRF7457TRPBF

IRF7457PbF-1 VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 20 V 7.0 mΩ 10.5 mΩ 28 nC 15 A HEXFET® Power MOSFET A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRF7457PbF-1 SO-8 ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7457PbF-1 IRF7457TRPbF-1 Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. Units 20 ± 20 15 12 120 2.5 1.6 0.02 -55 to + 150 V V A W W W/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. Max. Units ––– ––– 20 50 °C/W Notes  through „ are on page 8 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF7457PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.023 5.5 8.0 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, I D = 1mA 7.0 VGS = 10V, ID = 15A ƒ mΩ 10.5 VGS = 4.5V, ID = 12A ƒ 3.0 V VDS = VGS, ID = 250μA 20 VDS = 16V, VGS = 0V μA 100 VDS = 16V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 28 11 10 25 14 16 16 7.5 3100 1600 270 Max. Units Conditions ––– S VDS = 16V, ID = 12A 42 ID = 12A 17 nC VDS = 10V 15 VGS = 4.5V, ƒ 38 VGS = 0V, VDS = 10V ––– VDD = 10V, ––– ID = 12A ns ––– R G = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 10V ––– pF ƒ = 1.0MHz Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy‚ Avalanche Current Typ. Max. Units ––– ––– 265 15 mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Qrr trr Qrr Reverse Reverse Reverse Reverse 2 Recovery Recovery Recovery Recovery Time Charge Time Charge www.irf.com © 2014 International Rectifier Min. Typ. Max. Units ––– 2.5 ––– 120 ––– 0.8 ––– 0.67 ––– 50 ––– 70 ––– 50 ––– 74 1.3 ––– 75 105 75 110 ––– A ––– V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V ƒ TJ = 125°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VR= 15V di/dt = 100A/μs ƒ TJ = 125°C, IF = 12A, VR=15V di/dt = 100A/μs ƒ Submit Datasheet Feedback June 30, 2014 IRF7457PbF-1 1000 1000 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 2.7V 10 100 20μs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 100 TJ = 150 ° C 10 TJ = 25 ° C 1 V DS = 15V 20μs PULSE WIDTH 3.0 3.5 4.0 20μs PULSE WIDTH TJ = 150 °C 1 10 100 Fig 2. Typical Output Characteristics 1000 I D , Drain-to-Source Current (A) 2.7V VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 4.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 10 1 0.1 100 VDS , Drain-to-Source Voltage (V) 0.1 2.5 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP TOP www.irf.com © 2014 International Rectifier ID = 15A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback June 30, 2014 IRF7457PbF-1 5000 Ciss 3000 Coss 2000 1000 ID = 12A VDS = 10V VGS , Gate-to-Source Voltage (V) 4000 8 6 4 2 Crss 0 1 10 0 100 0 10 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 30 40 50 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 TJ = 150 ° C 10us 100 10 TJ = 25 °C 1 100us 1ms 10 10ms 0.1 0.2 TC = 25 ° C TJ = 150 ° C Single Pulse VGS = 0 V 0.8 1.4 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) ISD , Reverse Drain Current (A) C, Capacitance (pF) 10 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd www.irf.com © 2014 International Rectifier 2.6 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback June 30, 2014 IRF7457PbF-1 16 RD VDS V GS D.U.T. RG 10 + - VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit VDS 3 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS tr td(on) Fig 9. Maximum Drain Current Vs. Case Temperature t d(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response (Z thJA ) ID , Drain Current (A) 13 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 R DS ( on ) , Drain-to-Source On Resistance ( Ω ) IRF7457PbF-1 RDS(on) , Drain-to -Source On Resistance (Ω) 0.030 0.025 VGS = 4.5V 0.020 0.015 0.010 0.005 VGS = 10V 0.000 0 20 40 60 80 100 0.020 0.018 0.016 0.014 ID = 15A 0.012 0.010 0.008 0.006 120 3.0 3.5 4.0 4.5 5.0 5.5 VGS, Gate -to -Source Voltage (V) ID , Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current Fig 14. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2μF QGS .3μF D.U.T. + V - DS QGD VG EAS , Single Pulse Avalanche Energy (mJ) 50KΩ 12V VGS 3mA Charge IG ID Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS DRIVER D.U.T RG IAS 20V I AS tp + V - DD 0.01Ω Fig 14a&b. Unclamped Inductive Test circuit and Waveforms 6 www.irf.com © 2014 International Rectifier A 700 TOP 600 BOTTOM ID 5.4A 9.6A 12A 500 400 300 200 100 0 25 50 75 100 125 Starting TJ , Junction Temperature ( °C) Fig 14c. Maximum Avalanche Energy Vs. Drain Current Submit Datasheet Feedback June 30, 2014 150 IRF7457PbF-1 SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 6X 2 3 0.25 [.010] 4 A e e1 0.25 [.010] MIN .0532 .0688 1.35 1.75 MAX A1 .0040 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BASIC e1 .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° A C 8X b MILLIMETERS MAX A 5 INCHES MIN A1 y 0.10 [.004] 8X c 8X L 7 C A B FOOT PRINT NOT ES: 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 8X 0.72 [.028] 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7101 (MOSFET) INT ERNATIONAL RECTIFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DIS GNATES LEAD - FREE PRODUCT (OPT IONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = AS S EMBLY S ITE CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF7457PbF-1 SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 3.7mH, RG = 25Ω, IAS = 12A. ƒ Pulse width ≤ 300μs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board, t