PD - 93886D
IRF7460
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l
l
l
Ultra-Low Gate Impedance
Very Low RDS(on)
Fully Characterized Avalanche Voltage
and Current
Ω)
RDS(on) max(mΩ)
ID
20V
10@VGS = 10V
12A
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
Benefits
VDSS
SO-8
T o p V ie w
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
20
± 20
12
10
100
2.5
1.6
0.02
-55 to + 150
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes through
are on page 8
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1
3/25/01
IRF7460
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.089
7.2
10.5
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
10
VGS = 10V, ID = 12A
mΩ
14
VGS = 4.5V, ID = 9.6A
3.0
V
VDS = VGS, ID = 250µA
20
VDS = 16V, VGS = 0V
µA
100
VDS = 16V, VGS = 0V, TJ = 125°C
200
VGS = 16V
nA
-200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
26
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
19
6.9
6.0
17
11
6.9
12
4.3
2050
1060
150
Max. Units
Conditions
–––
S
VDS = 16V, ID = 9.6A
–––
ID = 9.6A
–––
nC
VDS = 10V
–––
VGS = 4.5V,
26
VGS = 0V, VDS = 10V
–––
VDD = 10V
–––
ID = 9.6A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
VDS = 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
240
9.6
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Qrr
trr
Qrr
Reverse
Reverse
Reverse
Reverse
2
Recovery Time
Recovery Charge
Recovery Time
Recovery Charge
Min. Typ. Max. Units
–––
–––
2.3
–––
–––
100
–––
–––
–––
–––
–––
–––
0.8
0.66
44
60
44
64
1.3
–––
66
90
66
96
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 9.6A, VGS = 0V
TJ = 125°C, IS = 9.6A, VGS = 0V
TJ = 25°C, IF = 9.6A, VR=10V
di/dt = 100A/µs
TJ = 125°C, IF = 9.6A, VR=10V
di/dt = 100A/µs
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IRF7460
1000
1000
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
10
2.7V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
2.7V
1
0.1
100
Fig 1. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 150 ° C
10
TJ = 25 ° C
V DS = 15V
20µs PULSE WIDTH
3.5
4.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
3.0
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
1
2.5
20µs PULSE WIDTH
TJ = 150 °C
4.5
ID = 12A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7460
10
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
8
6
4
2
10
0
1
10
0
100
10
20
30
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
C, Capacitance(pF)
10000
ID = 9.6A
VDS = 10V
VGS , Gate-to-Source Voltage (V)
100000
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10us
100
10
1.2
100us
1ms
10
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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Fig 6. On-Resistance Vs. Drain Current
IRF7460
12
VDS
I D , Drain Current (A)
10
VGS
RD
D.U.T.
RG
+
8
-VDD
4.5V
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
VDS
90%
0
25
50
75
100
TC , Case Temperature
125
150
( °C)
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P DM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7460
R DS(on) , Drain-to -Source On Resistance ( Ω )
R DS (on) , Drain-to-Source On Resistance ( Ω)
0.04
0.03
0.02
VGS = 4.5V
0.01
VGS = 10V
0.00
0
20
40
60
80
0.020
0.015
ID = 12A
0.010
0.005
2.0
100
4.0
6.0
8.0
10.0
12.0
14.0
16.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
600
VG
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V (B R )D S S
tp
L
VD S
D .U .T
RG
IA S
20V
IAS
tp
DRIVE R
+
V
- DD
0.01 Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
500
BOTTOM
ID
4.3A
7.7A
9.6A
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7460
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
5
H
0 .2 5 (.0 1 0 )
4
M
A M
θ
e1
K x 4 5°
-C -
0 .1 0 (.0 0 4 )
B 8X
0 .2 5 (.0 1 0 )
A1
L
8X
6
C
8X
M C A S B S
NOTES:
1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 .
2 . C O N T R O L L IN G D IM E N S IO N : IN C H .
3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A .
5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ).
6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
M IN
M AX
.05 32
.06 88
1.3 5
1.75
.00 40
.00 98
0.1 0
0.25
B
.01 4
.01 8
0.3 6
0.46
C
.00 75
.009 8
0.19
0.25
D
.18 9
.196
4.80
4.98
E
.15 0
.15 7
3.8 1
3.99
e1
A
M ILLIM E T E R S
M AX
A1
e
θ
IN C H E S
M IN
.05 0 B A S IC
1.27 B A S IC
.02 5 B A S IC
0 .635 B A S IC
H
.22 84
.244 0
K
.01 1
.01 9
0.2 8
5.8 0
0.48
6.20
L
0.16
.05 0
0.4 1
1.27
θ
0°
8°
0°
8°
R E C O M M E N D E D F O O T P R IN T
0 .7 2 (.0 2 8 )
8X
6 .4 6 ( .2 5 5 )
1 .7 8 (.0 7 0 )
8X
1 .2 7 ( .0 5 0 )
3X
SO-8 Part Marking
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7
IRF7460
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
F EE D D IRE C TIO N
N OT E S :
1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R .
2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ).
3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00
(12.992)
M AX .
14.4 0 ( .566 )
12.4 0 ( .488 )
N O T ES :
1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER .
2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 5.2mH
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t
