IRF7466TRPBF

PD- 95730 IRF7466PbF SMPS MOSFET HEXFET® Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free l l l Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current RDS(on) max(mW) ID 30V 12.5@VGS = 10V 11A 1 8 S 2 7 S 3 6 4 5 S Benefits VDSS G A A D D D D SO-8 Top View Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. Units 30 ± 20 11 9.0 90 2.5 1.6 0.02 -55 to + 150 V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. Max. Units ––– ––– 20 50 °C/W Notes  through „ are on page 8 www.irf.com 1 8/11/04 IRF7466PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.028 9.8 13 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 12.5 VGS = 10V, ID = 11A ƒ mΩ 17 VGS = 4.5V, ID = 8.8A ƒ 3.0 V VDS = VGS, ID = 250µA 20 VDS = 24V, VGS = 0V µA 100 VDS = 24V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 22 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 16 7.4 5.3 19 10 2.8 13 3.6 2100 710 52 Max. Units Conditions ––– S VDS = 15V, ID = 8.8A 23 ID = 8.8A 11 nC VDS = 15V 8.0 VGS = 4.5V ƒ 29 VGS = 0V, VDS = 15V ––– VDD = 15V ––– ID = 8.8A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 15V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. Max. Units ––– ––– 230 8.8 mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Qrr trr Qrr Reverse Reverse Reverse Reverse 2 Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– 2.3 ––– ––– 90 ––– ––– ––– ––– ––– ––– 0.8 0.66 42 59 42 61 1.3 ––– 63 89 63 92 A V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 8.8A, VGS = 0V ƒ TJ = 125°C, IS = 8.8A, VGS = 0V ƒ TJ = 25°C, IF = 8.8A, VR=15V di/dt = 100A/µs ƒ TJ = 125°C, IF = 8.8A, VR=15V di/dt = 100A/µs ƒ www.irf.com IRF7466PbF 1000 1000 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 10 1 2.7V 0.1 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 100 10 2.7V RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 TJ = 150 ° C 10 TJ = 25 ° C 1 V DS = 15V 20µs PULSE WIDTH 4.0 4.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 3.5 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3.0 20µs PULSE WIDTH TJ = 150 °C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 0.1 2.5 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 5.0 ID = 11A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7466PbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 Ciss 1000 Coss 100 Crss VGS , Gate-to-Source Voltage (V) 10 100000 ID = 8.8A VDS = 24V VDS = 15V 8 6 4 2 10 0 1 10 0 100 5 10 15 20 25 30 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) TJ = 150 ° C 100 10 TJ = 25 ° C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2.2 10us 100us 10 1ms TA = 25 ° C TJ = 150 ° C Single Pulse 1 0.1 10ms 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com Fig 6. On-Resistance Vs. Drain Current IRF7466PbF 12 VDS ID , Drain Current (A) 10 VGS D.U.T. RG 8 RD + -V DD 4.5V 6 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7466PbF RDS(on) , Drain-to -Source On Resistance (Ω) RDS (on) , Drain-to-Source On Resistance (Ω) 0.06 0.04 0.02 VGS = 4.5V VGS = 10V 0.00 0 20 40 60 80 0.025 0.020 ID = 11A 0.015 0.010 0.005 0.000 3.0 100 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) ID , Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2µF QGS .3µF D.U.T. + V - DS QGD 600 EAS , Single Pulse Avalanche Energy (mJ) 50KΩ 12V VG VGS 3mA Charge IG ID Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD 0.01Ω Fig 14a&b. Unclamped Inductive Test circuit and Waveforms 6 A TOP 500 BOTTOM ID 3.9A 7.0A 8.8A 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 14c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7466PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 7 6 5 6 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 0.25 .0098 0.10 .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° A C y 0.10 [.004] 8X b 0.25 [.010] MAX b e1 6X MILLIMETERS MIN A E INCHES DIM B A1 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER www.irf.com 7 IRF7466PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 5.9mH ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board, t