IRF7471TR

PD- 94036B IRF7471 SMPS MOSFET HEXFET® Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max ID 40V 13mΩ 10A A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S SO-8 T o p V ie w Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. Units 40 ± 20 10 8.3 83 2.5 1.6 0.02 -55 to + 150 V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. Max. Units ––– ––– 20 50 °C/W Notes  through „ are on page 8 www.irf.com 1 3/25/01 IRF7471 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. Typ. Max. Units Conditions 40 ––– ––– V VGS = 0V, ID = 250µA ––– 0.043 ––– V/°C Reference to 25°C, ID = 1mA ––– 9.5 13 VGS = 10V, ID = 10A ƒ mΩ Static Drain-to-Source On-Resistance ––– 12 16 VGS = 4.5V, ID = 8.0A ƒ Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 VDS = 32V, VGS = 0V Drain-to-Source Leakage Current µA ––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V nA Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 22 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 21 7.2 8.2 23 12 2.7 15 4.1 2820 700 46 Max. Units Conditions ––– S VDS = 20V, ID = 8.0A 32 ID = 8.0A 11 nC VDS = 20V 12 VGS = 4.5V ƒ 35 VGS = 0V, VDS = 16V ––– VDD = 20V ––– ID = 8.0A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 20V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. Max. Units ––– ––– 300 8.0 mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Qrr trr Qrr Reverse Reverse Reverse Reverse 2 Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– 2.3 A ––– ––– 83 ––– 0.80 ––– 0.65 ––– 69 ––– 130 ––– 73 ––– 160 1.3 ––– 100 200 110 240 V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 8.0A, VGS = 0V ƒ TJ = 125°C, IS = 8.0A, VGS = 0V TJ = 25°C, IF = 8.0A, VR= 20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 8.0A, VR=20V di/dt = 100A/µs ƒ www.irf.com IRF7471 1000 1000 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 2.7V 1 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10 2.7V 100 Fig 1. Typical Output Characteristics 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 ° C 10 TJ = 25 ° C V DS = 25V 20µs PULSE WIDTH 2.5 3.0 3.5 4.0 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 VGS , Gate-to-Source Voltage (V) 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 1 2.0 20µs PULSE WIDTH TJ = 150 °C 1 0.1 4.5 ID = 10A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7471 10 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 Ciss Coss 1000 100 Crss 8 6 4 2 10 1 10 ID = 8.0A VDS = 32V VDS = 20V VGS , Gate-to-Source Voltage (V) 100000 0 100 0 10 VDS , Drain-to-Source Voltage (V) 40 50 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C I D , Drain Current (A) ISD , Reverse Drain Current (A) 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 TJ = 25 ° C 1 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) 10us 100us 10 1ms TA = 25 ° C TJ = 150 ° C Single Pulse 1 2.0 1 10ms 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7471 12 VDS I D , Drain Current (A) 10 VGS RD D.U.T. RG + 8 -VDD 4.5V 6 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% 0 25 50 75 100 TC , Case Temperature 125 150 ( °C) 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7471 R DS(on) , Drain-to -Source On Resistance ( Ω ) R DS (on) , Drain-to-Source On Resistance ( Ω) 0.020 0.018 0.016 VGS = 4.5V 0.014 VGS = 10V 0.012 0.010 0 20 40 60 80 0.020 0.018 0.016 0.014 ID = 10A 0.012 0.010 3 100 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage (V) ID , Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2µF QGS .3µF D.U.T. QGD 800 + V - DS VG EAS , Single Pulse Avalanche Energy (mJ) 50KΩ 12V VGS 3mA Charge IG ID Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 15 V V (B R )D S S tp L VD S D .U .T RG IA S 20V IAS tp DRIVE R + V - DD 0.01 Ω Fig 14a&b. Unclamped Inductive Test circuit and Waveforms 6 A TOP BOTTOM ID 3.6A 6.4A 8.0A 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 14c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7471 SO-8 Package Details D IM D -B - 5 8 E -A - 1 7 2 5 A 6 3 e 6X 5 H 0 .2 5 (.0 1 0 ) 4 M A M θ e1 K x 4 5° -C - 0 .1 0 (.0 0 4 ) B 8X 0 .2 5 (.0 1 0 ) A1 L 8X 6 C 8X M C A S B S NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. M IN M AX .05 32 .06 88 1.3 5 1.75 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3.99 e1 A M ILLIM E T E R S M AX A1 e θ IN C H E S M IN .05 0 B A S IC 1.27 B A S IC .02 5 B A S IC 0 .635 B A S IC H .22 84 .244 0 K .01 1 .01 9 0.2 8 5.8 0 0.48 6.20 L 0.16 .05 0 0.4 1 1.27 θ 0° 8° 0° 8° R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X SO-8 Part Marking www.irf.com 7 IRF7471 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 9.4mH ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board. RG = 25Ω, IAS = 8.0A. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 8 www.irf.com