PD- 95559
IRF7473PbF
HEXFET® Power MOSFET
Applications
l Telecom and Data-Com 24 and 48V
input DC-DC converters
l Motor Control
l Uninterrutible Power Supply
l Lead-Free
Benefits
l Ultra Low On-Resistance
l High Speed Switching
l Low Gate Drive Current Due to Improved
Gate Charge Characteristic
l Improved Avalanche Ruggedness and
Dynamic dv/dt
l Fully Characterized Avalanche Voltage
and Current
Typical SMPS Topologies
l Full and Half Bridge 48V input Circuit
l Forward 24V input Circuit
VDSS
100V
RDS(on) max
26mW@VGS = 10V
8
S
2
7
D
S
3
6
D
4
5
D
G
6.9A
A
A
D
1
S
ID
SO-8
Top View
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
6.9
5.5
55
2.5
0.02
± 20
5.8
-55 to + 150
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes through are on page 8
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1
8/17/04
IRF7473PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
100
–––
–––
3.5
–––
–––
–––
–––
Typ.
–––
0.11
22
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
26
mΩ VGS = 10V, ID = 4.1A
5.5
V
VDS = VGS, ID = 250µA
1.0
VDS = 95V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
61
21
19
24
20
29
11
3180
230
120
830
150
230
Max. Units
Conditions
–––
S
VDS = 50V, ID = 4.1A
–––
ID = 4.1A
–––
nC
VDS = 50V
–––
VGS = 10V,
–––
VDD = 50V
–––
I
D = 4.1A
ns
–––
RG = 6.0Ω
–––
VGS = 10V
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
140
4.1
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.3
–––
–––
55
–––
–––
–––
–––
55
140
1.3
–––
–––
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 4.1A, VGS = 0V
TJ = 25°C, IF = 4.1A
di/dt = 100A/µs
D
S
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IRF7473PbF
1000
100
10
1
6.0V
0.1
100
10
5.5V
1
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
TOP
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
I D , Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
100
TJ = 150 ° C
10
1
TJ = 25 ° C
0.1
V DS = 25V
20µs PULSE WIDTH
0.01
5
6
7
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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12
ID = 6.9A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7473PbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
10
ID = 4.1A
VDS = 80V
VDS = 50V
VDS = 20V
16
12
8
4
0
1
10
0
100
20
60
80
100
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
40
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance(pF)
10000
VGS , Gate-to-Source Voltage (V)
20
100000
1.6
10
100µsec
1
0.1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7473PbF
8.0
VDS
ID , Drain Current (A)
VGS
6.0
RD
D.U.T.
RG
+
-V DD
10V
4.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS(on) , Drain-to -Source On Resistance (Ω)
RDS ( on) , Drain-to-Source On Resistance ( Ω )
IRF7473PbF
0.028
0.026
VGS = 10V
0.024
0.022
0
20
40
0.035
0.030
0.025
ID = 6.9A
0.020
60
6.0
ID , Drain Current (A)
8.0
10.0
12.0
14.0
16.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
QGD
400
+
V
- DS
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
20V
10V
I AS
IAS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
BOTTOM
ID
1.8A
3.3A
4.1A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7473PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
7
6
5
6
H
0.25 [.010]
1
2
3
A
4
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
C
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILLIMETERS
MIN
A
E
INCHES
DIM
B
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
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7
IRF7473PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 16mH
When mounted on 1 inch square copper board
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 4.1A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
RG = 25Ω, IAS = 4.1A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
TJ ≤ 150°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
8
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
