IRF7476TRPBF

PD - 95279 IRF7476PbF HEXFET® Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. l Lead-Free Benefits VDSS 12V 1 8 S 2 7 S 3 6 4 5 S G l l l Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current RDS(on) max 8.0mW@VGS = 4.5V ID 15A A A D D D D SO-8 Top View Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation„ Maximum Power Dissipation„ Linear Derating Factor Junction and Storage Temperature Range Max. Units 12 ±12 15 12 120 2.5 1.6 0.02 -55 to + 150 V V A W W W/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. Max. Units ––– ––– 20 50 °C/W Notes  through „ are on page 8 www.irf.com 1 04/05/06 IRF7476PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 12 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.014 6.0 12 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 8.0 VGS = 4.5V, ID = 15A ƒ mΩ 30 VGS = 2.8V, ID = 12A ƒ 1.9 V VDS = VGS, ID = 250µA 100 VDS = 9.6V, VGS = 0V µA 250 VDS = 9.6V, VGS = 0V, TJ = 125°C 200 VGS = 12V nA -200 VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 31 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 26 4.6 11 17 11 29 19 8.3 2550 2190 450 Max. Units Conditions ––– S VDS = 6.0V, ID = 12A 40 I D = 12A ––– nC VDS = 10V ––– VGS = 4.5V ––– VGS = 0V, VDS = 5.0V ––– VDD = 6.0V ––– ID = 12A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 6.0V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. Max. Units ––– ––– 160 12 mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Qrr trr Qrr Reverse Reverse Reverse Reverse 2 Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– 2.5 ––– ––– 120 ––– ––– ––– ––– ––– ––– 0.87 0.73 55 59 54 60 1.2 ––– 82 89 81 90 A V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V ƒ TJ = 125°C, IS = 12A, VGS = 0V ƒ TJ = 25°C, IF = 12A, VR=12V di/dt = 100A/µs ƒ TJ = 125°C, IF = 12A, VR=12V di/dt = 100A/µs ƒ www.irf.com IRF7476PbF 1000 1000 VGS 100 10 1 0.1 1.5V 0.01 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10V 8.0V 5.0V 4.5V 3.5V 2.7V 2.0V BOTTOM 1.5V VGS 10V 8.0V 5.0V 4.5V 3.5V 2.7V 2.0V BOTTOM 1.5V TOP TOP 100 10 1 1.5V 0.1 20µs PULSE WIDTH Tj = 150°C 20µs PULSE WIDTH Tj = 25°C 0.01 0.001 0.1 1 10 0.1 100 1 Fig 1. Typical Output Characteristics T J = 150°C 10.00 T J = 25°C VDS = 10V 20µs PULSE WIDTH 0.10 2.0 2.5 3.0 3.5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 4.0 I D = 15A 1.5 (Normalized) 100.00 RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (Α) 2.0 1.5 100 Fig 2. Typical Output Characteristics 1000.00 1.00 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 1.0 0.5 V GS = 4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 ° Tj, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7476PbF 100000 6 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd I D = 12A VDS = 9.6V VDS = 6V 5 VDS = 2.4V VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) Coss = Cds + Cgd 10000 Ciss Coss 1000 Crss 100 4 3 2 1 0 1 10 0 100 5 10 15 20 25 30 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 I SD , Reverse Drain Current (A) 100 T J = 150 10 ° C TJ = 25 ° C 1 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 1msec 10msec 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 0.1 0.2 100µsec 1.4 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7476PbF 15 RD VDS VGS 12 D.U.T. ID , Drain Current (A) RG + -V DD 9 4.5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 VDS 90% 0 25 50 75 100 125 150 T ,TCase Temperature ( ° C) Temperature (°C) c, Case 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJA ) 100 D = 0.50 10 0.20 Thermal Response 0.10 0.05 P DM 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = 2. Peak T 0.1 0.0001 0.001 0.01 0.1 1 t1/ t 2 J = P DM x Z thJA 10 +T A 100 1000 t 1, Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 RDS(on) , Drain-to -Source On Resistance (mΩ) RDS (on) , Drain-to-Source On Resistance (mΩ) IRF7476PbF 7.5 7.3 VGS = 4.5V 7.0 6.8 6.5 0 20 40 60 80 100 15.00 13.00 11.00 9.00 ID = 15A 7.00 5.00 2.0 120 4.0 6.0 8.0 10.0 VGS, Gate -to -Source Voltage (V) ID , Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS 50KΩ 12V .2µF QGS .3µF D.U.T. + V - DS QGD 400 VG VGS TOP 3mA Charge IG BOTTOM ID EAS , Single Pulse Avalanche Energy (mJ) Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD 0.01Ω Fig 14a&b. Unclamped Inductive Test circuit and Waveforms 6 A ID 5.4A 9.6A 12A 300 200 100 0 25 50 75 100 125 150 Starting Tj, Junction Temperature (°C) Fig 14c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7476PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) ' ',0 %  $      + >@ (  ;    ;E >@ $ 0,//,0(7(56 0,1 0$; $     $ E         F     ' (         H %$6,& H %$6,& $ H H ,1&+(6 0,1 0$; %$6,& %$6,& + .         /     \ ƒ ƒ ƒ ƒ .[ƒ & $ \ >@ & $ % ;/ ;F  )22735,17 ;>@ 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ >@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5)026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 www.irf.com ;;;; ) '$7(&2'(