IRF7478QTRPBF

PD- 96128B END OF LIFE IRF7478QPbF l l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS RDS(on) max (mW) ID 26@VGS = 10V 4.2A 30@VGS = 4.5V 3.5A 60V Description These HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. IRF7478QPbF 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Standard Pack Package Type Form Quantity EOL Notice IRF7478QTRPbF SO-8 Tape and Reel 4000 EOL 529 IRF7478QPbF SO-8 Tube 95 EOL 529 Base part number Orderable part number A A D S Replacement Part Number Please search the EOL part number on IR’s website for guidance Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 7.0 5.6 56 2.5 0.02 ± 20 3.7 -55 to + 150 A W W/°C V V/ns °C 300 (1.6mm from case ) Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. Max. Units ––– ––– 20 50 °C/W Notes  through † are on page 8 www.irf.com 1 06/27/14 END OF LIFE IRF7478QPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 60 ––– ––– ––– 1.0 ––– ––– ––– ––– Typ. ––– 0.065 20 23 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA 26 VGS = 10V, ID = 4.2A ƒ mΩ 30 VGS = 4.5V, ID = 3.5A ƒ 3.0 V VDS = VGS, ID = 250μA 20 VDS = 48V, VGS = 0V μA 100 VDS = 48V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Symbol EAS IAR Min. 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 21 4.3 9.6 7.7 2.6 44 13 1740 300 37 1590 220 410 Max. Units Conditions ––– S VDS = 50V, ID = 4.2A 31 ID = 4.2A ––– nC VDS = 48V ––– VGS = 4.5V ––– VDD = 30V ––– ID = 4.2A ns ––– R G = 6.2Ω ––– VGS = 10V ƒ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 48V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 48V … Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. Max. Units ––– ––– 140 4.2 mJ A Diode Characteristics IS ISM VSD trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– 2.3 ––– ––– 56 ––– ––– ––– ––– 52 100 1.3 78 150 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 4.2A, VGS = 0V TJ = 25°C, IF = 4.2A di/dt = 100A/μs ƒ D S ƒ www.irf.com END OF LIFE 100 IRF7478QPbF 100 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 10 2.7V 20μs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 10 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α) T J = 150°C 10 T J = 25°C VDS = 25V 20μs PULSE WIDTH 3.0 3.5 Fig 3. Typical Transfer Characteristics www.irf.com 1 10 100 Fig 2. Typical Output Characteristics 100 VGS, Gate-to-Source Voltage (V) 20μs PULSE WIDTH TJ = 150 °C VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 2.7V 1 0.1 100 VDS , Drain-to-Source Voltage (V) 2.5 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 4.0 ID = 7.0A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 END OF LIFE IRF7478QPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 Ciss 1000 Coss 100 Crss 10 VGS , Gate-to-Source Voltage (V) 100000 10 6 4 2 0 100 0 20 30 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C 100 I D , Drain Current (A) ISD , Reverse Drain Current (A) 10 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 10 1 TJ = 25 ° C 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 48V VDS = 30V VDS = 12V 8 10 1 ID = 4.2A 2.2 10us 10 100us 1ms 1 0.1 10ms TA = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com END OF LIFE IRF7478QPbF 8.0 VDS VGS ID , Drain Current (A) 6.0 RD D.U.T. RG + -V DD 10V 4.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 TC , Case Temperature ( °C) 150 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 END OF LIFE 0.028 RDS(on) , Drain-to -Source On Resistance ( Ω) RDS (on) , Drain-to-Source On Resistance ( Ω) IRF7478QPbF 0.026 0.024 VGS = 4.5V 0.022 0.020 0.018 VGS = 10V 0.016 0 10 20 30 40 50 0.04 0.03 ID = 7.0A 0.02 0.01 0.0 60 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VGS, Gate -to -Source Voltage (V) ID , Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2μF QGS .3μF D.U.T. + V - DS QGD EAS , Single Pulse Avalanche Energy (mJ) 50KΩ 12V VG VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD 0.01Ω Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 A 400 TOP BOTTOM 300 ID 1.9A 3.4A 4.2A 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com END OF LIFE IRF7478QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 6 7 6 5 H 1 2 3 0.25 [.010] 4 A MAX MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 A1 8X b 0.25 [.010] A MAX 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC e1 6X MILLIMETERS MIN A E INCHES DIM B H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° C y 0.10 [.004] 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE : T HIS IS AN IRF 7101 (MOS F E T ) INT E RNAT IONAL RECT IF IER L OGO XXXX F 7101 DAT E CODE (YWW) P = DE S IGNAT ES L EAD-F RE E PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEE K A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 END OF LIFE IRF7478QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com END OF LIFE IRF7478QPbF † Qualification Information Industrial † Qualification level Moisture Sensitivity Level (per JEDEC JESD47F††guidelines) MSL1 SO-8 (per JEDEC J-STD-020D††) Yes RoHS Compliant Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. † Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 16mH RG = 25Ω, IAS = 4.2A. ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS † ISD ≤ 4.2A, di/dt ≤ 160A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150°C IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ www.irf.com 9