StrongIRFET™
IRF7480MTRPbF
DirectFET® N-Channel Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
VDSS
40V
RDS(on) typ.
0.95m
max
1.20m
ID (Silicon Limited)
217A
ID (double-sided cooling)
330A
S
Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free, RoHS Compliant
Package Type
IRF7480MPbF
DirectFET® ME
S
S
S
S
D
DirectFET® ISOMETRIC
ME
Standard Pack
Form
Quantity
Tape and Reel
4800
3.0
Orderable Part Number
IRF7480MTRPbF
225
ID = 132A
200
2.5
175
2.0
TJ = 125°C
1.5
150
125
100
75
50
1.0
25
TJ = 25°C
0.5
0
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
G
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m)
Base part number
S
D
25
50
75
100
125
150
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
2016-5-4
IRF7480MTRPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC (top)= 25°C
Continuous Drain Current, VGS @ 10V (double-sided cooling)
TC (bottom)= 25°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
TJ
Operating Junction and
Storage Temperature Range
TSTG
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
Surface mounted on 1 in. square Cu
board (still air).
2
Min. Typ.
40
–––
–––
30
––– 0.95
––– 1.60
2.1
3.0
––– –––
––– –––
––– –––
––– –––
––– 0.81
A
W
W/°C
V
°C
81
206
mJ
See Fig.15,16, 23a, 23b
A
mJ
Typ.
–––
12.5
20
–––
0.75
Units
217
137
868
96
0.77
± 20
-55 to + 150
330
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
EAS (Thermally limited)
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Case
RJC
Junction-to-PCB Mounted
RJ-PCB
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
Max.
Max.
45
–––
–––
1.3
–––
Units
°C/W
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1.0mA
1.20
VGS = 10V, ID = 132A
m
–––
VGS = 6.0V, ID = 66A
3.9
V
VDS = VGS, ID = 150µA
1.0
VDS = 40V, VGS = 0V
µA
150
VDS = 40V, VGS = 0V, TJ = 125°C
100
VGS = 20V
nA
-100
VGS = -20V
–––
TC measured with thermocouple mounted to top (Drain) of part.
Mounted to a PCB with small clip
heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)
2016-5-4
IRF7480MTRPbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
370 ––– –––
S VDS = 10V, ID = 132A
Qg
Total Gate Charge
––– 123 185
ID = 132A
Qgs
Gate-to-Source Charge
–––
31
–––
VDS =20V
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
44
–––
VGS = 10V
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
79
–––
ID = 132A, VDS =0V, VGS = 10V
td(on)
Turn-On Delay Time
–––
21
–––
VDD = 20V
tr
Rise Time
–––
70
–––
ID = 30A
ns
td(off)
Turn-Off Delay Time
–––
68
–––
RG = 2.7
tf
Fall Time
–––
58
–––
VGS = 10V
Ciss
Input Capacitance
––– 6680 –––
VGS = 0V
Coss
Output Capacitance
––– 1035 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
––– 700 –––
pF ƒ = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1240 –––
VGS = 0V, VDS = 0V to 32V
Coss eff. (TR) Effective Output Capacitance (Time Related)
––– 1515 –––
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
VSD
dv/dt
Peak Diode Recovery
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– –––
87
showing the
A
integral reverse
––– –––
868
p-n junction diode.
––– ––– 1.2
V TJ= 25°C,IS =132A, VGS = 0V
D
G
S
–––
2.4
–––
–––
–––
–––
–––
–––
44
46
56
63
2.1
–––
–––
–––
–––
–––
TJ =150°C,IS =132A,
VDS = 40V
TJ = 25° C VR = 34V,
ns
TJ = 125°C IF = 132A
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
V/ns
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.009mH, RG = 50, IAS = 132A, VGS =10V.
ISD ≤ 132A, di/dt ≤ 920A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note # AN-994. http://www.irf.com/technical-info/appnotes/an-994.pdf
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V.
3
2016-5-4
IRF7480MTRPbF
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
BOTTOM
100
4.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
10
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.8
TJ = 150°C
100
TJ = 25°C
10
VDS = 10V
60µs PULSE WIDTH
1.0
ID = 132A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
2
3
4
5
6
7
8
-60 -40 -20 0
Fig 5. Typical Transfer Characteristics
100000
Fig 6. Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
Fig 4. Typical Output Characteristics
1000
ID, Drain-to-Source Current(A)
1
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
Ciss
Coss
Crss
1000
ID= 132A
12.0
VDS = 32V
VDS = 20V
10.0
8.0
6.0
4.0
2.0
0.0
100
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
0
20
40
60
80
100 120 140 160
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
2016-5-4
IRF7480MTRPbF
1000
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 150°C
10
TJ = 25°C
1
100µsec
100
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
VGS = 0V
0.01
0.1
0.2
0.4
0.6
0.8
0.1
1.0
1
10
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.9
48
Id = 1.0mA
0.8
47
0.7
46
0.6
45
Energy (µJ)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
DC
44
43
0.5
0.4
0.3
42
0.2
41
0.1
40
0.0
-60 -40 -20 0
-5
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
5
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical Coss Stored Energy
Fig 11. Drain-to-Source Breakdown Voltage
RDS (on), Drain-to -Source On Resistance (m)
0
4.5
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
2016-5-4
IRF7480MTRPbF
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
EAR , Avalanche Energy (mJ)
100
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 132A
80
60
40
20
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
2016-5-4
IRF7480MTRPbF
9
3.5
3.0
IRRM (A)
VGS(th), Gate threshold Voltage (V)
4.0
ID = 150µA
ID = 250µA
2.5
ID = 1.0mA
IF = 88A
VR = 34V
7
TJ = 25°C
TJ = 125°C
6
5
4
ID = 1.0A
2.0
8
3
1.5
2
-75 -50 -25
0
25
50
75 100 125 150
100
200
TJ , Temperature ( °C )
400
500
600
700
diF /dt (A/µs)
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
200
9
8
IF = 132A
VR = 34V
7
TJ = 25°C
TJ = 125°C
QRR (nC)
IRRM (A)
300
6
5
180
IF = 88A
VR = 34V
160
TJ = 25°C
TJ = 125°C
140
120
4
100
3
80
2
100
200
300
400
500
600
100
700
200
300
400
500
600
700
diF /dt (A/µs)
diF /dt (A/µs)
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
200
IF = 132A
VR = 34V
QRR (nC)
160
TJ = 25°C
TJ = 125°C
120
80
40
100
200
300
400
500
600
700
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
7
2016-5-4
IRF7480MTRPbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
I AS
0.01
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
8
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
2016-5-4
IRF7480MTRPbF
DirectFET® Board Footprint, ME Outline
(Medium Size Can, E-Designation)
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
G
S
S
S
S
S
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
2016-5-4
IRF7480MTRPbF
DirectFET® Outline Dimension, ME Outline
(Medium Size Can, E-Designation)
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®. This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
J1
K
L
L1
M
N
P
METRIC
MIN MAX
6.25
6.35
4.80
5.05
3.85
3.95
0.35
0.45
0.58
0.62
1.08
1.12
0.93
0.97
1.28
1.32
0.42
0.38
0.58
0.62
0.88
0.92
2.08
2.12
3.63
3.67
0.59
0.70
0.02
0.08
0.08
0.17
IMPERIAL
MIN
MAX
0.246
0.250
0.189
0.199
0.152
0.156
0.014
0.018
0.023
0.024
0.043
0.044
0.037
0.038
0.050
0.052
0.015
0.017
0.023
0.024
0.035
0.036
0.082
0.083
0.143
0.144
0.023
0.028
0.0008 0.003
0.003
0.007
Dimensions are shown in
millimeters (inches)
DirectFET® Part Marking
LOGO
GATE MARKING
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
2016-5-4
IRF7480MTRPbF
DirectFET® Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7"
reel, order IRF7480MTR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
IMPERIAL
IMPERIAL
METRIC
METRIC
MIN
MIN
MAX
CODE
MAX
MIN
MIN
MAX
MAX
12.992
6.9
A
N.C
N.C
330.0
177.77
N.C
N.C
0.795
0.75
B
N.C
20.2
19.06
N.C
N.C
N.C
0.504
0.53
C
0.50
12.8
13.5
0.520
13.2
12.8
D
0.059
0.059
N.C
1.5
1.5
N.C
N.C
N.C
E
3.937
2.31
100.0
58.72
N.C
N.C
N.C
N.C
F
N.C
N.C
0.53
N.C
N.C
0.724
18.4
13.50
G
0.488
0.47
12.4
11.9
N.C
0.567
14.4
12.01
H
0.469
0.47
11.9
11.9
N.C
0.606
15.4
12.01
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
0.311
0.319
7.90
8.10
0.154
0.161
3.90
4.10
0.469
0.484
11.90
12.30
0.215
0.219
5.45
5.55
0.201
0.209
5.10
5.30
0.256
0.264
6.50
6.70
0.059
N.C
1.50
N.C
0.059
1.50
0.063
1.60
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
2016-5-4
IRF7480MTRPbF
Qualification Information†
Industrial *
(per JEDEC JESD47F†† guidelines)
Qualification Level
Moisture Sensitivity Level
MSL1
DFET 1.5
(per JEDEC J-STD-020D††)
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
††
* Industrial qualification standards except autoclave test conditions.
Revision History
Date
Comments
11/07/2014
Updated EAS (L =1mH) = 206mJ on page 2
Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V” on page 3
Updated RJA from “60°C/W” to “45°C/W” on page 2.
05/14/2015
Updated registered trademark from DirectFETTM to DirectFET® on page 1,9 and 10.
05/04/2016
Updated datasheet with corporate template.
Added ID (double- sided cooling) = 300A on pages1 and 2.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
12
2016-5-4
