PD - 95283
IRF7488PbF
HEXFET® Power MOSFET
Applications
l
l
VDSS
80V
High frequency DC-DC converters
Lead-Free
RDS(on) max
29mW@VGS=10V
Benefits
1
8
S
2
7
S
3
6
4
5
S
l
l
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
G
Qg
38nC
A
A
D
D
D
D
SO-8
Top View
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
80
± 20
6.3
5.0
50
2.5
1.6
20
-55 to + 150
V
A
W
mW/°C
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes through are on page 9
www.irf.com
1
09/21/04
IRF7488PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
80
–––
–––
2.0
–––
–––
–––
–––
Typ.
–––
0.089
24
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
29
mΩ VGS = 10V, ID = 3.8A
4.0
V
VDS = VGS, ID = 250µA
20
VDS = 80V, VGS = 0V
µA
250
VDS = 64V, VGS = 0V, TJ = 125°C
200
VGS = 20V
nA
-200
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
9.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
38
9.1
12
13
12
44
16
1680
270
32
1760
170
340
Max. Units
Conditions
–––
S
VDS = 15V, ID = 3.8A
57
ID = 3.8A
nC
VDS = 40V
VGS = 10V,
–––
VDD = 40V
–––
I
D = 3.8A
ns
–––
RG = 9.1Ω
–––
VGS = 10V
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 64V
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
96
3.8
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.3
–––
–––
50
–––
–––
–––
–––
65
190
1.3
98
290
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 3.8A, VGS = 0V
TJ = 25°C, IF = 3.8A
di/dt = 100A/µs
D
S
www.irf.com
IRF7488PbF
100
100
VGS
1
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
0.1
4.0V
0.01
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
10
4.0V
1
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
100
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
T J = 150°C
10.00
1.00
T J = 25°C
0.10
VDS = 25V
20µs PULSE WIDTH
0.01
4.0
5.0
6.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
ID = 6.3A
VGS = 10V
2.0
(Normalized)
RDS(on) , Drain-to-Source On Resistance
100.00
ID, Drain-to-Source Current (Α)
VGS
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
TOP
TOP
1.5
1.0
0.5
7.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7488PbF
20
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance (pF)
VGS , Gate-to-Source Voltage (V)
Coss
10000
ID= 3.8A
= Cds + Cgd
Ciss
1000
Coss
Crss
100
VDS= 64V
VDS= 40V
VDS= 16V
16
12
8
4
0
10
0
1
10
100
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
100.0
ISD, Reverse Drain Current (A)
20
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
T J = 150°C
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
10.0
1.0
T J = 25°C
10
100µsec
1msec
1
VGS = 0V
0.1
0.1
0.4
0.6
0.8
1.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
1.2
Tc = 25°C
Tj = 150°C
Single Pulse
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF7488PbF
7
VDS
6
ID , Drain Current (A)
VGS
5
RD
D.U.T.
RG
+
-V DD
4
10V
3
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2
Fig 10a. Switching Time Test Circuit
1
VDS
0
90%
25
50
75
100
125
150
T C , Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response ( Z thJC )
D = 0.50
0.20
0.10
0.05
10
0.02
1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.1
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
0.036
RDS(on) , Drain-to -Source On Resistance ( Ω)
RDS ( on) , Drain-to-Source On Resistance ( Ω)
IRF7488PbF
0.034
0.032
0.030
0.028
VGS= 10V
0.026
0.024
0.022
0
20
40
60
0.05
0.04
0.03
ID = 3.8A
0.02
80
4.0
ID , Drain Current (A)
8.0
12.0
16.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
240
VG
EAS, Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
DRIVER
ID
1.7A
3.0A
BOTTOM 3.8A
TOP
200
160
120
80
40
0
D.U.T
RG
IAS
20V
I AS
tp
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
25
50
75
100
125
150
A
Starting TJ , Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
IRF7488PbF
D.U.T
Driver Gate Drive
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D=
Period
P.W.
+
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 17. Gate Charge Waveform
www.irf.com
7
IRF7488PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
7
6
5
6
H
0.25 [.010]
1
2
3
A
4
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
6X
e1
0.25
.0098
0.10
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
.025 BASIC
C
0.635 B ASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
1.27 BASIC
K x 45°
A
8X b
MAX
b
e1
e
MILLIMETERS
MIN
A
E
INCHES
DIM
B
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
8
www.irf.com
IRF7488PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board
Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 13mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 3.8A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
www.irf.com
9
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
