PD - 94641B
IRF7494
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
RDS(on) max
44m:@VGS = 10V
150V
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
5.2A
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
ID
SO-8
Top View
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
150
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, V GS @ 10V
5.2
ID @ TA = 100°C
Continuous Drain Current, V GS @ 10V
3.7
c
A
IDM
Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
3.0
W
Linear Derating Factor
0.02
W/°C
3.0
-55 to + 150
V/ns
°C
42
h
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
RθJL
RθJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
e
Typ.
Max.
Units
–––
20
°C/W
–––
50
Notes through are on page 8
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1
03/27/08
IRF7494
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
150
–––
–––
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.15
35
–––
44
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
2.5
–––
–––
–––
4.0
10
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 3.1A
f
V
µA
VDS = VGS, ID = 250µA
VDS = 120V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Forward Transconductance
12
–––
–––
S
VDS = 50V, ID = 5.2A
Total Gate Charge
Gate-to-Source Charge
–––
–––
36
7.5
54
–––
nC
ID = 3.1A
VDS = 75V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
–––
–––
13
15
–––
–––
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
13
36
–––
–––
tf
Fall Time
–––
14
–––
VGS = 10V
Ciss
Coss
Input Capacitance
Output Capacitance
–––
–––
1750
220
–––
–––
VGS = 0V
VDS = 25V
Crss
Coss
Reverse Transfer Capacitance
Output Capacitance
–––
–––
100
870
–––
–––
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
–––
–––
120
170
–––
–––
VGS = 10V
VDD = 75V
ns
pF
ID = 3.1A
RG = 6.5Ω
f
f
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
g
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
–––
Max.
370
Units
mJ
–––
3.1
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
2.7
ISM
(Body Diode)
Pulsed Source Current
–––
–––
42
VSD
trr
Qrr
ton
2
c
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Conditions
D
MOSFET symbol
A
–––
–––
–––
55
1.3
–––
V
ns
–––
140
–––
nC
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 3.1A, VGS = 0V
TJ = 25°C, IF = 3.1A, VDD = 25V
di/dt = 100A/µs
S
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF7494
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
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Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF7494
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
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IRF7494
VDS
VGS
RD
D.U.T.
RG
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
Fig 9. Maximum Drain Current vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7494
Fig 12. On-Resistance vs. Drain Current
L
DUT
VCC
Fig 13. On-Resistance vs. Gate Voltage
QG
VGS
QGS
QGD
0
1K
VG
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
0.01Ω
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
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IRF7494
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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