PD - 95288
IRF7495PbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
RDS(on) max
ID
100V
22m @VGS = 10V
7.3A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
:
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
SO-8
Top View
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
100
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
7.3
ID @ TA = 100°C
Continuous Drain Current, VGS @ 10V
4.6
IDM
Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/°C
7.3
-55 to + 150
V/ns
°C
c
A
58
h
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
RθJL
RθJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
e
Typ.
Max.
Units
–––
20
°C/W
–––
50
Notes through are on page 8
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1
9/21/04
IRF7495PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
V
Conditions
100
–––
–––
VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient
–––
0.10
–––
V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
–––
18
22
mΩ
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 100V, VGS = 0V
VGS = 10V, ID = 4.4A
f
VDS = 80V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Forward Transconductance
Qgs
Gate-to-Source Charge
–––
6.3
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
11.7
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
8.7
–––
VDD = 50V
tr
Rise Time
–––
13
–––
td(off)
Turn-Off Delay Time
–––
10
–––
tf
Fall Time
–––
36
–––
VGS = 10V
Ciss
Input Capacitance
–––
1530
–––
VGS = 0V
Coss
Output Capacitance
–––
250
–––
Crss
Reverse Transfer Capacitance
–––
110
–––
Coss
Output Capacitance
–––
980
–––
Coss
Output Capacitance
–––
160
–––
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
240
–––
VGS = 0V, VDS = 0V to 80V
Total Gate Charge
11
–––
–––
–––
34
51
S
Conditions
gfs
Qg
VDS = 25V, ID = 4.4A
ID = 4.4A
nC
VDS = 50V
f
ID = 4.4A
ns
RG = 6.2Ω
f
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
g
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
–––
Max.
180
Units
mJ
–––
4.4
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
2.3
ISM
(Body Diode)
Pulsed Source Current
–––
–––
58
showing the
integral reverse
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 4.4A, VGS = 0V
trr
Reverse Recovery Time
–––
42
–––
ns
Qrr
Reverse Recovery Charge
–––
73
–––
nC
ton
Forward Turn-On Time
2
c
MOSFET symbol
A
D
G
S
f
TJ = 25°C, IF = 4.4A, VDD = 25V
di/dt = 100A/µs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF7495PbF
100
100
BOTTOM
VGS
15V
10V
8.0V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
4.5V
10
4.5V
10
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
1
1
0.1
1
10
100
0.1
1000
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (Α)
BOTTOM
VGS
15V
10V
8.0V
5.0V
4.5V
T J = 150°C
10
T J = 25°C
1
VDS = 50V
20µs PULSE WIDTH
0.1
ID = 7.3A
VGS = 10V
2.0
1.5
1.0
0.5
2
3
4
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF7495PbF
100000
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
C oss = C ds + C gd
10000
C, Capacitance(pF)
ID= 4.4A
Ciss
1000
Coss
Crss
100
VDS= 80V
VDS= 50V
10.0
VDS= 20V
8.0
6.0
4.0
2.0
0.0
10
1
10
100
0
VDS, Drain-to-Source Voltage (V)
100.00
30
40
1000
10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
20
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
TJ = 150°C
1.00
T J = 25°C
0.10
10
100µsec
1msec
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.01
10msec
0.1
0.0
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
QG Total Gate Charge (nC)
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7495PbF
8
RD
VDS
7
ID, Drain Current (A)
VGS
6
D.U.T.
RG
+
-V DD
5
10V
4
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
3
Fig 10a. Switching Time Test Circuit
2
VDS
1
90%
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response ( Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
RDS(on) , Drain-to -Source On Resistance (mΩ)
RDS (on) , Drain-to-Source On Resistance (m Ω)
IRF7495PbF
25
20
VGS = 10V
15
10
0
10
20
30
40
50
60
50
40
30
20
ID = 4.4A
10
2
70
ID , Drain Current (A)
VCC
QGS
VG
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
7
8
9 10 11 12 13 14 15 16
500
QGD
0
tp
6
Fig 13. On-Resistance vs. Gate Voltage
EAS , Single Pulse Avalanche Energy (mJ)
DUT
5
QG
VGS
1K
4
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Drain Current
L
3
ID
2.0A
3.5A
BOTTOM 4.4A
TOP
400
300
200
100
0
A
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
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IRF7495PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
5
H
0.25 [.010]
1
2
3
A
4
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
6X
e1
.0098
0.10
0.25
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
.025 BAS IC
C
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
1.27 BASIC
K x 45°
A
8X b
MAX
b
e1
e
MILLIMETERS
MIN
A
E
INCHES
DIM
B
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES:
1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
8X 0.72 [.028]
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET)
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DATE CODE (YWW)
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
A = ASSEMBLY SITE CODE
LOT CODE
PART NUMBER
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7
IRF7495PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 19mH
RG = 25Ω, IAS = 4.4A.
When mounted on 1 inch square copper
board, t ≤ 10 sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 5.8A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
8
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
