StrongIRFET™
IRF7580MTRPbF
DirectFET® N-Channel Power MOSFET
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
VDSS
60V
RDS(on) typ.
2.9m
max
3.6m
ID
116A
S
Benefits
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dv/dt and di/dt capability
Lead-free, RoHS compliant
Package Type
IRF7580MPbF
DirectFET ME
S
S
S
S
D
DirectFET®
ISOMETRIC
ME
Standard Pack
Orderable Part Number
Form
Quantity
Tape and Reel
4800
8.0
IRF7580MTRPbF
120
ID = 70A
7.0
100
6.0
5.0
T J = 125°C
4.0
3.0
2.0
80
60
40
20
T J = 25°C
1.0
0
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
G
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m )
Base part number
S
D
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© 2014 International Rectifier
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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IRF7580MTRPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
IDM
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
Operating Junction and
TJ
Storage Temperature Range
TSTG
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
EAS (tested)
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Case
RJC
Junction-to-PCB Mounted
RJA-PCB
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
Surface mounted on 1 in. square Cu
board (still air).
2
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Units
A
W
W/°C
V
°C
mJ
A
mJ
Typ.
–––
12.5
20
–––
0.75
100
120
70
12
Max.
44
–––
–––
1.3
–––
Units
°C/W
Min. Typ. Max. Units
Conditions
60
––– –––
V
VGS = 0V, ID = 250µA
–––
44
––– mV/°C Reference to 25°C, ID = 1.0mA
––– 2.9
3.6
m VGS = 10V, ID = 70A
––– 3.5 ––– m VGS = 6.0V, ID = 35A
2.1 ––– 3.7
V
VDS = VGS, ID = 150µA
––– ––– 1.0
µA VDS = 60V, VGS = 0V
––– ––– 150
VDS = 60V, VGS = 0V, TJ = 125°C
––– ––– 100
nA VGS = 20V
––– ––– -100
VGS = -20V
––– 0.8 –––
TC measured with thermocouple mounted to top (Drain) of part.
Mounted to a PCB with small clip
heatsink (still air)
© 2014 International Rectifier
Max.
116
82
460
115
0.78
± 20
-55 to + 175
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)
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IRF7580MTRPbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
190 ––– –––
S VDS = 10V, ID = 70A
Qg
Total Gate Charge
––– 120 180
ID = 70A
Qgs
Gate-to-Source Charge
–––
32
–––
VDS =30V
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
36
–––
VGS = 10V
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
84
–––
ID = 70A, VDS =0V, VGS = 10V
td(on)
Turn-On Delay Time
–––
20
–––
VDD = 30V
tr
Rise Time
–––
38
–––
ID = 30A
ns
td(off)
Turn-Off Delay Time
–––
53
–––
RG = 2.7
tf
Fall Time
–––
21
–––
VGS = 10V
Ciss
Input Capacitance
––– 6510 –––
VGS = 0V
Coss
Output Capacitance
––– 610 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
––– 360 –––
pF ƒ = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 620 –––
VGS = 0V, VDS = 0V to 48V
Coss eff. (TR) Effective Output Capacitance (Time Related)
––– 770 –––
VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
VSD
Min. Typ. Max. Units
Conditions
––– –––
105
A MOSFET symbol
showing the
integral reverse
––– –––
460
p-n junction diode.
––– ––– 1.2
V TJ= 25°C,IS = 70A, VGS = 0V
dv/dt
Peak Diode Recovery
–––
4.1
–––
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
–––
–––
–––
–––
–––
41
44
55
71
2.5
–––
–––
–––
–––
–––
D
G
S
V/ns TJ =175°C,IS =70A, VDS = 60V
ns
TJ = 25° C VR = 51V,
TJ = 125°C IF = 70A
nC TJ = 25°C di/dt = 100A/µs
TJ = 125°C
A TJ = 25°C
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 42µH
RG = 50, IAS = 70A, VGS =10V.
ISD ≤ 70A, di/dt ≤ 980A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the
same charging time as Coss while VDS is rising from 0
to 80% VDSS.
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Coss eff. (ER) is a fixed capacitance that gives the
same energy as Coss while VDS is rising from 0 to
80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
R is measured at TJ approximately 90°C.
This value determined from sample failure population,
starting TJ = 25°C, L= 42µH, RG = 50, IAS = 70A,
VGS =10V.
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IRF7580MTRPbF
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
1
100
BOTTOM
4.5V
10
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.1
1
0.1
1
10
100
1000
0.1
V DS, Drain-to-Source Voltage (V)
100
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.8
T J = 175°C
100
T J = 25°C
10
VDS = 25V
60µs PULSE WIDTH
1.0
ID = 70A
VGS = 10V
2.4
2.0
1.6
1.2
0.8
0.4
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
100000
ID= 70A
VGS, Gate-to-Source Voltage (V)
10000
Ciss
Coss
Crss
1000
Fig 6. Normalized On-Resistance vs. Temperature
14.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
C, Capacitance (pF)
10
Fig 4. Typical Output Characteristics
1000
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
100
12.0
VDS= 48V
VDS= 30V
VDS= 12V
10.0
8.0
6.0
4.0
2.0
0.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
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0
20
40
60
80
100 120 140 160
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
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IRF7580MTRPbF
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
10
T J = 25°C
1
1msec
100
OPERATION
IN THIS
AREA
LIMITED BY
R DS(on)
10
1
10msec
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
DC
0.01
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1.0
1
10
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
1.0
78
Id = 1.0mA
76
0.8
74
Energy (µJ)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
100µsec
72
70
0.6
0.4
68
0.2
66
64
0.0
-10
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical Coss Stored Energy
Fig 11. Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( m )
0
7.0
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
6.0
5.0
4.0
3.0
2.0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRF7580MTRPbF
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
EAR , Avalanche Energy (mJ)
120
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 70A
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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IRF7580MTRPbF
20
IF = 46A
V R = 51V
TJ = 25°C
3.5
15
TJ = 125°C
3.0
2.5
IRRM (A)
VGS(th) , Gate threshold Voltage (V)
4.0
ID = 150µA
ID = 250µA
2.0
ID = 1.0mA
ID = 1.0A
10
5
1.5
1.0
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
T J , Temperature ( °C )
600
800
1000
diF /dt (A/µs)
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
25
300
IF = 70A
V R = 51V
20
IF = 46A
V R = 51V
250
TJ = 25°C
TJ = 125°C
15
QRR (nC)
IRRM (A)
400
10
5
TJ = 25°C
TJ = 125°C
200
150
100
0
50
0
200
400
600
800
1000
0
200
diF /dt (A/µs)
400
600
800
1000
diF /dt (A/µs)
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
300
IF = 70A
V R = 51V
TJ = 25°C
250
QRR (nC)
TJ = 125°C
200
150
100
50
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
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IRF7580MTRPbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
I AS
0.01
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRF7580MTRPbF
DirectFET® Board Footprint, ME Outline
(Medium Size Can, E-Designation)
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
G
S
S
S
S
S
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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© 2014 International Rectifier
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IRF7580MTRPbF
DirectFET® Outline Dimension, ME Outline
(Medium Size Can, E-Designation)
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
J1
K
L
L1
M
N
P
METRIC
MIN MAX
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.58 0.62
1.08 1.12
0.93 0.97
1.28 1.32
0.38 0.42
0.58 0.62
0.88 0.92
2.08 2.12
3.63 3.67
0.59 0.70
0.02 0.08
0.08 0.17
IMPERIAL
MIN
MAX
0.246
0.250
0.189
0.199
0.152
0.156
0.014
0.018
0.023
0.024
0.043
0.044
0.037
0.038
0.050
0.052
0.015
0.017
0.023
0.024
0.035
0.036
0.082
0.083
0.143
0.144
0.023
0.028
0.0008 0.003
0.003
0.007
Dimensions are shown in
millimeters (inches)
DirectFET® Part Marking
LOGO
GATE MARKING
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7580MTRPbF
DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF7580MTRPBF). For 1000 parts on 7"
reel, order IRF7580MTR1PBF
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
0.311
0.319
7.90
8.10
0.154
0.161
3.90
4.10
0.469
0.484
11.90
12.30
0.215
0.219
5.45
5.55
0.201
0.209
5.10
5.30
0.256
0.264
6.50
6.70
0.059
1.50
N.C
N.C
0.059
1.50
0.063
1.60
REEL DIMENSIONS
TR1 OPTION (QTY 1000)
STANDARD OPTION (QTY 4800)
IMPERIAL
IMPERIAL
METRIC
METRIC
MIN
MAX
MIN
CODE
MAX
MIN
MIN
MAX
MAX
6.9
12.992
N.C
A
N.C
177.77
330.0
N.C
N.C
0.75
B
0.795
N.C
19.06
20.2
N.C
N.C
N.C
0.53
C
0.504
0.50
13.5
12.8
0.520
13.2
12.8
0.059
D
0.059
N.C
1.5
1.5
N.C
N.C
N.C
E
2.31
3.937
N.C
58.72
100.0
N.C
N.C
N.C
F
N.C
N.C
0.53
N.C
N.C
0.724
18.4
13.50
G
0.47
0.488
N.C
11.9
12.4
0.567
14.4
12.01
H
0.47
0.469
N.C
11.9
11.9
0.606
15.4
12.01
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification Level
Moisture Sensitivity Level
DFET 1.5
††
(per JEDEC J-STD-020D††)
Yes
RoHS Compliant
†
MSL3
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
* Industrial qualification standards except autoclave test conditions.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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