IRF7706

PD -94003 IRF7706 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel VDSS RDS(on) max ID -30V 22mΩ@VGS = -10V 36mΩ@VGS = -4.5V -7.0A -5.6A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de- signer with an extremely efficient and reliable device for battery and load management. 1 8 D 2 7 3 G 4 1= 2= 3= 4= D S S G 6 S 5 8= 7= 6= 5= D S S D TSSOP-8 The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (