IRF7738L2TRPBF

IRF7738L2PbF DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 1.2mΩ max. 1.6mΩ ID (Silicon Limited) 184A Qg 129nC Features • Advanced Process Technology • Optimized for Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • Repetitive Avalanche Capability for Robustness and Reliability • Lead free, RoHS Compliant and Halogen free D Applicable DirectFET® Outline and Substrate Outline  SB SC M2 G S S S S S S D DirectFET™ ISOMETRIC L6 M4 L4 L6 L8 Description The IRF7738L2TR(1)PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest onstate resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET ® packaging platform coupled with the latest silicon technology allows the IRF7738L2TR(1)PbF to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current applications. P art n um be r Package T ype IR F 7 7 3 8 L 2 T R P b F IR F 7 7 3 8 L 2 T R 1 P b F D ir e c tF E T 2 L a r g e C a n D ir e c tF E T 2 L a r g e C a n S tan da rd P ac k Form Q u a n t it y T a p e a nd R e e l 4000 T a p e a nd R e e l 1000 N o te "T R " s u ffix "T R 1 " s u ffix E O L no tic e # 2 6 4 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Max. Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, Continuous Drain Current, Continuous Drain Current, Continuous Drain Current, IDM PD @TC = 25°C PD @TA = 25°C EAS EAS (tested) Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Peak Soldering Temperature Operating Junction and Storage Temperature Range IAR EAR TP TJ TSTG f e g VGS VGS VGS VGS @ @ @ @ 10V 10V 10V 10V f f e (Silicon Limited) (Silicon Limited) (Silicon Limited) (Package Limited) h g g Units 40 ± 20 184 130 35 315 736 94 3.3 134 538 h V A W mJ See Fig.18a, 18b, 16, 17 A mJ 270 °C -55 to + 175 Thermal Resistance RθJA RθJA RθJA RθJCan RθJ-PCB e j k Parameter Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Can Junction-to-PCB Mounted Linear Derating Factor fl f Typ. Max. Units ––– 12.5 20 ––– ––– 45 ––– ––– 1.6 0.5 °C/W 0.63 W/°C HEXFET® is a registered trademark of International Rectifier. 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 13, 2014 IRF7738L2PbF Static Characteristics @ TJ = 25°C (unless otherwise stated) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs RG IDSS Forward Transconductance Gate Resistance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. 40 ––– ––– 0.02 ––– ––– ––– 2.0 ––– 113 ––– ––– ––– ––– ––– 1.2 3.0 -8.4 ––– 1.0 ––– ––– ––– ––– 1.6 4.0 ––– ––– ––– 5 250 100 -100 Units Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 109A V VDS = VGS, ID = 250µA mV/°C VDS = 10V, ID = 109A S i Ω µA nA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Dynamic Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Qg Total Gate Charge Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 129 27 10 45 47 55 54 21 77 39 38 7471 1640 737 5936 1465 2261 194 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions VDS = 20V, VGS = 10V ID = 109A nC nC ns See Fig.11 VDS = 16V, VGS = 0V VDD = 20V, VGS = 10V ID = 109A RG = 1.8Ω i VGS = 0V VDS = 25V pF ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 32V, f=1.0MHz VGS = 0V, VDS = 0V to 32V Diode Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISM g VSD trr Qrr ƒ Surface mounted on 1 in. square Cu (still air). Min. Typ. Max. ––– ––– 184 ––– ––– 736 ––– ––– ––– ––– 50 68 1.3 75 102 ‰ Mounted to a PCB with small clip heatsink (still air) Units A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS = 109A, VGS = 0V IF = 109A, VDD = 20V di/dt = 100A/µs D G S i i ‰ Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) Notes  through Š are on page 9 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 13, 2014 IRF7738L2PbF 10000 ≤60µs PULSE WIDTH TOP Tj = 25°C ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 BOTTOM 100 10 ≤60µs PULSE WIDTH TOP Tj = 175°C ID, Drain-to-Source Current (A) 10000 1000 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 4.5V 4.5V 10 1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on), Drain-to -Source On Resistance (m Ω) ID = 109A 3 T J = 125°C 1 T J = 25°C 0 6 8 10 12 14 16 18 Vgs = 10V 1.8 T J = 125°C 1.6 1.4 1.2 T J = 25°C 1.0 0.8 5 30 55 80 105 130 155 180 205 ID, Drain Current (A) Fig 4. Typical On-Resistance vs. Drain Current Fig 3. Typical On-Resistance vs. Gate Voltage 2.0 1000 VDS = 25V ≤60µs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 2.0 20 VGS, Gate -to -Source Voltage (V) 100 T J = -40°C TJ = 25°C TJ = 175°C 10 1.8 ID = 109A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1 3 4 5 6 7 8 VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics 3 100 Fig 2. Typical Output Characteristics 4 4 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 2 1 www.irf.com © 2014 International Rectifier -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) Fig 6. Normalized On-Resistance vs. Temperature Submit Datasheet Feedback February 13, 2014 IRF7738L2PbF 1000 4.5 3.5 ID = 1.0A ID = 10mA ID = 1.0mA ID = 250µA 2.5 TJ = -40°C ISD, Reverse Drain Current (A) VGS(th) , Gate threshold Voltage (V) 5.5 TJ = 25°C TJ = 175°C 100 10 VGS = 0V 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 0.2 T J , Temperature ( °C ) 0.8 1.0 1.2 Fig 8. Typical Source-Drain Diode Forward Voltage 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 350 T J = 25°C C oss = C ds + C gd C, Capacitance (pF) Gfs, Forward Transconductance (S) 400 250 200 T J = 175°C 150 100 10000 Ciss Coss 1000 Crss V DS = 10V 50 380µs PULSE WIDTH 0 100 0 20 40 60 80 100 120 140 160 1 ID,Drain-to-Source Current (A) 12 200 VDS= 32V VDS= 20V VDS= 8V 180 160 ID, Drain Current (A) 10 100 Fig 10. Typical Capacitance vs.Drain-to-Source Voltage 14 ID= 109A 10 VDS, Drain-to-Source Voltage (V) Fig 9. Typical Forward Transconductance Vs. Drain Current VGS, Gate-to-Source Voltage (V) 0.6 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Threshold Voltage vs. Junction Temperature 300 0.4 8 6 4 140 120 100 80 60 40 2 20 0 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 QG, Total Gate Charge (nC) T C , Case Temperature (°C) Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage Fig 12. Maximum Drain Current vs. Case Temperature 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 13, 2014 IRF7738L2PbF 600 EAS , Single Pulse Avalanche Energy (mJ) OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 100µsec 100 DC 1msec 10msec 10 Tc = 25°C Tj = 175°C Single Pulse ID 17A 29A BOTTOM 109A TOP 500 400 300 200 100 0 1 0.10 1 10 25 100 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) VDS, Drain-to-Source Voltage (V) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy vs. Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.02 0.1 τJ 0.01 0.05 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 τC τ2 τ1 τ2 τ3 τ3 τ4 τ4 τ τi (sec) 0.00399 18.81517 0.81430 0.03055 0.15982 0.00014 0.62239 0.00402 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 Ri (°C/W) R4 R4 Ci= τi/Ri Ci i/Ri 0.001 1E-006 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse Avalanche Current (A) ID, Drain-to-Source Current (A) 10000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Tj = 150°C and Tstart =25°C (Single Pulse) 100 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 16. Typical Avalanche Current Vs.Pulsewidth 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 13, 2014 IRF7738L2PbF 160 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 109A EAR , Avalanche Energy (mJ) 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 15) Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 17. Maximum Avalanche Energy Vs. Temperature V(BR)DSS 15V tp DRIVER L VDS D.U.T RG VGS 20V + - VDD IAS tp A 0.01Ω I AS Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms Id Vds L VCC DUT 0 20K 1K Vgs S Vgs(th) Fig 19a. Gate Charge Test Circuit V DS V GS RG Qgodr RD Qgd Qgs2 Qgs1 Fig 19b. Gate Charge Waveform D.U.T. VDS + - V DD 90% 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10% VGS td(on) Fig 20a. Switching Time Test Circuit 6 www.irf.com © 2014 International Rectifier tr t d(off) tf Fig 20b. Switching Time Waveforms Submit Datasheet Feedback February 13, 2014 IRF7738L2PbF DirectFET® Board Footprint, L6 (Large Size Can). Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations G = GATE D = DRAIN S = SOURCE D D S D S G D S S D 7 S www.irf.com © 2014 International Rectifier S D Submit Datasheet Feedback February 13, 2014 IRF7738L2PbF DirectFET® Outline Dimension, L6 Outline (LargeSize Can). Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations DIMENSIONS CODE A B C D E F G H J K L L1 L2 M P R METRIC MIN MAX 9.05 9.15 6.85 7.10 5.90 6.00 0.55 0.65 0.58 0.62 1.18 1.22 0.98 1.02 0.73 0.77 0.38 0.42 1.35 1.45 2.55 2.65 3.95 4.05 5.35 5.45 0.68 0.74 0.09 0.17 0.02 0.08 IMPERIAL MIN MAX 0.356 0.360 0.270 0.280 0.232 0.236 0.022 0.026 0.023 0.024 0.046 0.048 0.039 0.040 0.029 0.030 0.017 0.015 0.053 0.057 0.100 0.104 0.155 0.159 0.210 0.214 0.027 0.029 0.003 0.007 0.001 0.003 DirectFET® Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 13, 2014 IRF7738L2PbF DirectFET® Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF7738L2TRPBF). For 1000 parts on 7" reel, order IRF7738L2TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4000) IMPERIAL METRIC MIN CODE MAX MAX MIN 12.992 A N.C N.C 330.00 0.795 B N.C 20.20 N.C 0.504 C 0.520 12.80 13.20 0.059 D 1.50 N.C N.C 3.900 E 99.00 3.940 100.00 N.C F N.C 22.40 0.880 G 0.650 16.40 18.40 0.720 H 0.630 15.90 0.760 19.40 LOADED TAPE FEED DIRECTION NOTE: CONTROLLING DIMENSIONS IN MM 9 CODE A B C D E F G H www.irf.com © 2014 International Rectifier DIMENSIONS IMPERIAL METRIC MIN MIN MAX MAX 4.69 11.90 0.476 12.10 0.154 0.161 4.10 3.90 0.623 0.642 16.30 15.90 0.291 7.60 7.40 0.299 0.283 7.40 7.20 0.291 0.390 9.90 0.398 10.10 0.059 1.50 N.C N.C 0.059 1.60 1.50 0.063 Submit Datasheet Feedback February 13, 2014 IRF7738L2PbF † Qualification Information Industrial Qualification level †† (per JEDEC JESD47F††† guidelines) Comments: This family of products has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level. Moisture Sensitivity Level MSL1 DFET2 (per JEDEC J-STD-020D†††) Yes RoHS Compliant † †† ††† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET® Website. ƒ Surface mounted on 1 in. square Cu board, steady state. „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. Revision History Date 2/12/2014 † Starting TJ = 25°C, L = 0.022mH, RG = 50Ω, IAS = 109A. ‡ Pulse width ≤ 400µs; duty cycle ≤ 2%. ˆ Used double sided cooling, mounting pad with large heatsink. ‰ Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Š Rθ is measured at TJ of approximately 90°C. Comments • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264). • Updated data sheet with new IR corporate template. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 13, 2014