IRF7756

PD -94159A IRF7756 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel VDSS RDS(on) max ID -12V 0.040@VGS = -4.5V 0.058@VGS = -2.5V 0.087@VGS = -1.8V ±4.3A ±3.4A ±2.2A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management. 1 8 2 7 3 6 4 5 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= D2 S2 S2 G2 TSSOP-8 The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (