IRF7805PbF
HEXFET® Chip-Set for DC-DC Converters
N Channel Application Specific MOSFETs
Ideal for Mobile DC-DC Converters
Low Conduction Losses
Low Switching Losses
Lead-Free
A
A
D
S
1
8
S
2
7
S
3
6
D
G
4
5
D
D
SO-8
IRF7805PbF
Top View
Devices Features
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make this device ideal
for high efficiency DC-DC Converters that power the
latest generation of mobile microprocessors.
IRF7805PbF
VDSS
30V
RDS(on)
11m
Qg
31nC
QSW
11.5nC
QOSS
36nC
The IRF7805PbF offers maximum efficiency for mobile
CPU core DC-DC converters.
G
Gate
D
Drain
S
Source
Standard Pack
Base part number
Package Type
IRF7805PbF
SO-8
Symbol
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7805PbF
Parameter
Max.
VDS
Drain-Source Voltage
30
VGS
Gate-to-Source Voltage
± 12
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
13
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
10
100
2.5
PD @TA = 70°C
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
TJ
TSTG
Thermal Resistance
Symbol
RJL
RJA
1
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Units
V
A
1.6
0.02
-55 to + 150
W
W/°C
°C
Typ.
Max.
Units
–––
–––
20
50
°C/W
2016-8-23
IRF7805PbF
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
30
–––
1.0
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V VGS = 0V, ID = 250µA
9.2
11
mVGS = 4.5V, ID = 7.0A
–––
3.0
V VDS = VGS, ID = 250µA
–––
70
VDS = 30V, VGS = 0V
µA VDS = 24V, VGS = 0V
–––
10
––– 150
VDS = 24V,VGS = 0V,TJ = 100°C
––– 100
VGS = 12V
nA
––– -100
VGS = -12V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Total Gate Charge
Qg
Qgs1
Pre -Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
Qsw
Switch Charge (Qgs2 + Qgd)
Qoss
Output Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
Rise Time
tr
td(off)
Turn-Off Delay Time
tf
Fall Time
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
Reverse Recovery Charge
Qrr
–––
–––
–––
–––
–––
–––
0.5
–––
–––
–––
–––
22
3.7
1.4
6.8
8.2
30
–––
16
20
38
16
31
–––
–––
–––
11.5
36
1.7
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
2.5
–––
–––
106
–––
–––
1.2
–––
88
–––
VGS = 5.0V
nC VDS = 16V
ID = 7.0A
nC VDS = 16V, VGS = 0V
VDD = 16V,VGS = 4.5V
ID = 7.0A
ns
RG = 2
Resistive Load
A
V
nC
Qrr
Reverse Recovery Charge
–––
55
–––
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 7.0A,VGS = 0V
di/dt = 700A/µs
VDS =16V, VGS= 0V, IS= 7.0A
di/dt = 700A/µs (with 10BQ040)
VDS =16V, VGS= 0V, IS= 7.0A
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 300µs; duty cycle 2%.
When mounted on 1" in square copper board, t < 10 sec.
Typ = measured - QOSS
R is measured at TJ of approximately 90°C.
Devices are 100% tested to these parameters.
2
2016-8-23
IRF7805PbF
Fig. 2 Typical Gate Charge vs.
Gate-to-Source Voltage
Fig. 1 Normalized On-Resistance
vs. Temperature
ISD , Reverse Drain Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.4
V GS = 0 V
0.5
0.6
0.7
0.8
0.9
VSD,Source-to-Drain Voltage (V)
Fig. 3 Typical Rds(on) vs. Gate-to-Source Voltage
Fig. 4 Typical Source-Drain Diode Forward Voltage
Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
3
2016-8-23
IRF7805PbF
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
D
D IM
B
8
6
7
6
M IN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B ASIC
1.27 B ASIC
e1
5
H
E
1
6X
2
3
0.25 [ .010]
4
A
e
e1
0.25 [ .010]
A1
C
A
M AX
.025 B ASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
8X b
M ILLIM ETERS
M AX
5
A
IN C H ES
M IN
y
0.10 [ .004]
8X L
8X c
7
B
F O O T P R IN T
N O TE S :
1.
D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
2.
C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R
3.
D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] .
4.
O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A .
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] .
6
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] .
7
D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O
A S U B S TR A TE .
8 X 0 .7 2 [ .0 2 8 ]
6 .4 6 [ .2 5 5 ]
3 X 1 .2 7 [ .0 5 0 ]
8 X 1 .7 8 [ .0 7 0 ]
SO-8 Part Marking Information
E X A M P L E : T H IS IS A N IR F 7 1 0 1 (M O S F E T )
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
XXXX
F7101
D A T E C O D E (Y W W )
P = D E S IG N A T E S L E A D -F R E E
P R O D U C T (O P T IO N A L )
Y = L A S T D IG IT O F T H E Y E A R
W W = W EEK
A = A S S E M B L Y S IT E C O D E
LO T C O D E
PART N U M BER
4
2016-8-23
IRF7805PbF
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
5
2016-8-23
IRF7805PbF
Qualification Information
Consumer
Qualification Level
Moisture Sensitivity Level
MSL1
(per JEDEC J-STD-020D)†
SO-8
Yes
RoHS Compliant
† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
08/23/2016
Comments
Changed datasheet with Infineon logo - all pages.
Corrected typo Qoss from typ/max “3.0nC/3.6nC” to “30nC/36nC” on page 2.
Added disclaimer on last page.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
ifx1
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this
document is subject to customer’s compliance
with its obligations stated in this document and
any applicable legal requirements, norms and
standards concerning customer’s products and
any use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility
of
customer’s
technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
6
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products
may not be used in any applications where a
failure of the product or any consequences of the
use thereof can reasonably be expected to result in
personal injury.
2016-8-23
