PD-95214A
IRF7828PbF
HEXFET® Power MOSFET for DC-DC Converters
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7828 has been optimized for all parameters that
are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7828 offers particulary low RDS(on) and high Cdv/dt
immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
SO-8
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
T o p V ie w
DEVICE CHARACTERISTICS
IRF7828PbF
RDS(on)
9.5mΩ
QG
9.2nC
Qsw
3.7nC
Qoss
6.1nC
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain or Source
TA = 25°C
Current (VGS ≥ 4.5V)
TL = 70°C
Pulsed Drain Current
Power Dissipation
TA = 25°C
IRF7828PbF
30
VGS
±20
ID
13.6
IDM
100
PD
2.5
11
TL = 70°C
Units
V
A
W
1.6
TJ, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
IS
3.1
A
Pulsed Source Current
ISM
100
Junction & Storage Temperature Range
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
R θJA
Max.
50
Units
°C/W
Maximum Junction-to-Lead
R θJL
20
°C/W
04/05/07
IRF7828PbF
Electrical Characteristics
Parameter
Min
Typ
Max
Units
Drain-to-Source
Breakdown Voltage
BVDSS
30
–
–
V
Static Drain-Source
on Resistance
RDS (on)
–
9.5
12.5
mΩ
Gate Threshold Voltage
VGS(th)
1.0
–
–
V
Drain-Source Leakage
Current
IDSS
–
–
1.0
–
–
150
Current*
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 10A
VDS = VGS,ID = 250µA
VDS = 24V, VGS = 0
µA
VDS = 24V, VGS = 0,
Tj = 125°C
Gate-Source Leakage
Current
IGSS
–
–
±100
Total Gate Chg Cont FET
QG
–
9.2
14
VGS=5.0V, ID=15A, VDS=16V
Total Gate Chg Sync FET
QG
–
7.3
–
VGS = 5V, VDS< 100mV
Pre-Vth
Gate-Source Charge
QGS1
–
2.5
–
VDS = 15V, ID = 10A
Post-Vth
Gate-Source Charge
QGS2
–
0.8
–
Gate to Drain Charge
QGD
–
2.9
–
Switch Chg(Qgs2 + Qgd)
Qsw
–
3.7
–
Output Charge
Qoss
–
6.1
–
Gate Resistance
RG
–
2.3
–
Turn-on Delay Time
td (on)
–
6.3
–
nA
nC
VDS = 10V, VGS = 0
Ω
VDD = 15V, ID = 10A
Rise Time
tr
–
2.7
–
Turn-off Delay Time
td (off)
–
9.7
–
Fall Time
tf
–
7.3
–
Input Capacitance
Ciss
–
1010
–
Output Capacitance
Coss
–
360
–
–
110
–
Min
Typ
Max
Units
Reverse Transfer Capacitance Crss
VGS = ±20V
ns
VGS = 4.5V
Clamped Inductive Load
pF
VDS = 15V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Diode Forward
Voltage*
VSD
–
–
1.0
V
Reverse Recovery
Charge
Qrr
–
13
–
nC
Reverse Recovery
Charge (with Parallel
Schottky)
Qrr(s)
Notes:
2
Conditions
IS = 10A, VGS = 0V
di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
–
13
–
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q OSS
measured at VGS = 5.0V, IF = 10A.
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IRF7828PbF
12
ID = 10A
ID = 14A
VGS = 10V
VGS , Gate-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.5
1.0
VDS= 24V
VDS= 15V
10
8
6
4
2
0
0.5
-60 -40 -20
0
20
40
60
0
80 100 120 140 160
5
10
15
20
Q G Total Gate Charge (nC)
T J , Junction Temperature (°C)
Fig 1. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
C, Capacitance (pF)
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3. On-Resistance Vs. Gate Voltage
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Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
3
IRF7828PbF
100.0
100.0
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (Α)
TJ = 150°C
10.0
T J = 25°C
1.0
VDS = 15V
20µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
T J = 150°C
10.0
1.0
T J = 25°C
VGS = 0V
0.1
6.0
0.0
0.5
VGS, Gate-to-Source Voltage (V)
1.0
1.5
VSD, Source-toDrain Voltage (V)
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Source-Drain Diode
Forward Voltage
100
Thermal Response ( Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF7828PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information (Lead-Free)
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