IRF7842PbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Secondary Synchronous Rectification
for Isolated DC-DC Converters
l Synchronous Fet for Non-Isolated
DC-DC Converters
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
Base Part Number
Package Type
IRF7842PbF
SO-8
HEXFET® Power MOSFET
VDSS
RDS(on) max
:
Qg (typ.)
40V 5.0m @VGS = 10V
33nC
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7842PbF
IRF7842TRPbF
Absolute Maximum Ratings
Max.
Units
Drain-to-Source Voltage
Parameter
40
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
18
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
14
IDM
Pulsed Drain Current
140
PD @TA = 25°C
Power Dissipation
VDS
c
PD @TA = 70°C
f
Power Dissipation f
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
A
W
2.5
1.6
W/°C
°C
0.02
-55 to + 150
Thermal Resistance
Parameter
RθJL
RθJA
Notes
1
g
Junction-to-Ambient fg
Junction-to-Drain Lead
Typ.
Max.
Units
–––
20
°C/W
–––
50
through
are on page 10
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July 8, 2014
IRF7842PbF
Static @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
BVDSS
Drain-to-Source Breakdown Voltage
Parameter
40
–––
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.037
–––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
4.0
5.0
mΩ
–––
4.7
5.9
VGS(th)
Gate Threshold Voltage
1.35
–––
2.25
V
ΔVGS(th)
Gate Threshold Voltage Coefficient
–––
- 5.6
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
μA
VDS = 32V, VGS = 0V
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
S
VDS = 20V, ID = 14A
IGSS
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
81
–––
–––
Qg
Total Gate Charge
–––
33
50
Qgs1
Pre-Vth Gate-to-Source Charge
–––
9.6
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
2.8
–––
Qgd
Gate-to-Drain Charge
–––
10
–––
Qgodr
Gate Charge Overdrive
–––
10.6
–––
Conditions
VGS = 0V, ID = 250μA
e
= 14A e
VGS = 10V, ID = 17A
VGS = 4.5V, ID
VDS = VGS, ID = 250μA
VDS = 32V, VGS = 0V, TJ = 125°C
VGS = -20V
VDS = 20V
nC
VGS = 4.5V
ID = 14A
Q sw
Switch Charge (Q gs2 + Q gd )
–––
12.8
–––
Q oss
Output Charge
–––
18
–––
nC
Ω
VDS = 16V, VGS = 0V
RG
Gate Resistance
–––
1.3
2.6
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 20V, VGS = 4.5V
tr
Rise Time
–––
12
–––
ID = 14A
td(off)
Turn-Off Delay Time
–––
21
–––
tf
Fall Time
–––
5.0
–––
Ciss
Input Capacitance
–––
4500
–––
Coss
Output Capacitance
–––
680
–––
Crss
Reverse Transfer Capacitance
–––
310
–––
ns
e
Clamped Inductive Load
VGS = 0V
pF
VDS = 20V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
Max.
Units
–––
50
mJ
–––
14
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min.
Typ.
Max.
–––
–––
3.1
–––
–––
140
(Body Diode)
(Body Diode)
c
Conditions
MOSFET symbol
A
Pulsed Source Current
ISM
Units
showing the
integral reverse
p-n junction diode.
e
VSD
Diode Forward Voltage
–––
–––
1.0
V
TJ = 25°C, IS = 14A, VGS = 0V
trr
Reverse Recovery Time
–––
99
150
ns
TJ = 25°C, IF = 14A, VDD = 20V
Q rr
Reverse Recovery Charge
–––
11
17
nC
di/dt = 100A/μs
2
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e
July 8, 2014
IRF7842PbF
1000
1000
100
BOTTOM
TOP
10
1
2.5V
≤ 60μs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
100
BOTTOM
≤ 60μs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (Α)
2.5V
10
0.1
100.0
T J = 150°C
10.0
T J = 25°C
1.0
VDS = 25V
≤ 60μs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
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ID = 18A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF7842PbF
100000
12
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 14A
C, Capacitance (pF)
C oss = C ds + C gd
10000
Ciss
1000
Coss
Crss
10
8
6
4
2
0
100
1
10
0
100
40
60
80
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000.0
ISD, Reverse Drain Current (A)
20
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100.0
T J = 150°C
10.0
T J = 25°C
1.0
10
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS= 30V
VDS= 20V
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1.2
0
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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1000
IRF7842PbF
2.4
18
VGS(th) Gate threshold Voltage (V)
16
ID , Drain Current (A)
14
12
10
8
6
4
2
2.0
ID = 250μA
1.6
1.2
0.8
0.4
0
25
50
75
100
125
-75
150
-50
-25
25
50
75
100
125
150
T J , Temperature ( °C )
T J , Junction Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
0
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
Thermal Response ( Z thJA )
10
1
R1
R1
0.1
τJ
0.01
τJ
τ1
τ1
R2
R2
τ2
τ2
τ3
τC
τ
τ3
Ri (°C/W) τi (sec)
10.48
0.138167
26.83
1.8582
12.69
Ci= τi/Ri
Ci i/Ri
44.8
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R3
R3
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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100
RDS(on), Drain-to -Source On Resistance ( mΩ)
IRF7842PbF
200
EAS, Single Pulse Avalanche Energy (mJ)
16
ID = 18A
12
8
T J = 125°C
4
TJ = 25°C
0
2.0
4.0
6.0
8.0
10.0
ID
6.7A
7.5A
BOTTOM 14A
TOP
160
120
80
40
0
25
VGS, Gate-to-Source Voltage (V)
50
75
100
125
150
Starting T J, Junction Temperature (°C)
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy
Vs. Drain Current
15V
LD
VDS
L
VDS
DRIVER
+
VDD -
D.U.T
RG
VGS
20V
IAS
tp
+
V
- DD
D.U.T
A
VGS
0.01Ω
Pulse Width < 1μs
Duty Factor < 0.1%
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 14a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
I AS
Fig 13b. Unclamped Inductive Waveforms
6
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tr
td(off)
tf
Fig 14b. Switching Time Waveforms
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IRF7842PbF
D.U.T
Driver Gate Drive
P.W.
+
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 16. Gate Charge Test Circuit
7
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Qgs1 Qgs2
Qgd
Qgodr
Fig 17. Gate Charge Waveform
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IRF7842PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
8
6
7
6
MAX
MIN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
e1
5
H
E
1
6X
2
3
0.25 [.010]
4
A
e
e1
8X b
0.25 [.010]
MILLIMET ERS
MIN
5
A
INCHES
DIM
B
MAX
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT E S :
1. DIME NS IONING & T OLE RANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIME T ER
3. DIME NS IONS ARE S HOWN IN MILLIME T ERS [INCHES ].
4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA.
5 DIME NS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEE D 0.15 [.006].
6 DIME NS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEE D 0.25 [.010].
6.46 [.255]
7 DIME NS ION IS T HE LE NGT H OF LE AD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
E XAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT E RNAT IONAL
RECT IF IER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DE S IGNAT ES LEAD-F REE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRF7842PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9
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IRF7842PbF
†
Qualification information
Consumer
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
††
guidelines)
MS L1
SO-8
††
(per JEDE C J-S T D-020D )
Yes
RoHS compliant
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.5mH
RG = 25Ω, IAS = 14A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Rθ is measured at TJ approximately 90°C
Revision History
Date
Comment
7/8/2014
• Updated data sheet based on corporate template.
• Added Qual level on page10.
• Added ordering information on page1
• Updated Max RG from "TBD" to "2.6Ohm" on page2.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
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