IRF7854TRPBF

PD - 97172 IRF7854PbF Applications l Primary Side Switch in Bridge or twoswitch forward topologies using 48V (±10%) or 36V to 60V ETSI range inputs. l Secondary Side Synchronous Rectification Switch for 12Vout l Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS RDS(on) max ID 80V 13.4m:@VGS = 10V 10A A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 80 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 7.9 c A IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C dv/dt TJ Peak Diode Recovery dv/dt Operating Junction and 11 -55 to + 150 V/ns °C TSTG Storage Temperature Range 79 h Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) ei Typ. Max. Units ––– 20 °C/W ––– 50 Notes  through ‡ are on page 8 www.irf.com 1 01/05/06 IRF7854PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.095 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 11 13.4 VGS(th) Gate Threshold Voltage 3.0 ––– 4.9 mΩ V VDS = VGS, ID = 100µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 80V, VGS = 0V ––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 IGSS ––– V VGS = 0V, ID = 250µA VGS = 10V, ID = 10A f VDS = 80V, VGS = 0V, TJ = 125°C VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units ––– ––– Conditions gfs Qg Forward Transconductance 12 S VDS = 25V, ID = 6.0A Total Gate Charge ––– 27 41 Qgs Gate-to-Source Charge ––– 7.7 ––– nC VDS = 40V Qgd Gate-to-Drain ("Miller") Charge ––– 8.7 ––– VGS = 10V td(on) Turn-On Delay Time ––– 9.4 ––– VDD = 40V tr Rise Time ––– 8.5 ––– td(off) Turn-Off Delay Time ––– 15 ––– tf Fall Time ––– 8.6 ––– VGS = 10V Ciss Input Capacitance ––– 1620 ––– VGS = 0V Coss Output Capacitance ––– 350 ––– Crss Reverse Transfer Capacitance ––– 86 ––– Coss Output Capacitance ––– 1730 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 230 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 410 ––– VGS = 0V, VDS = 0V to 64V ID = 6.0A f ID = 6.0A ns RG = 6.2Ω f VDS = 25V pF ƒ = 1.0MHz g Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. ––– Max. 110 Units mJ ––– 6.0 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 2.3 ISM (Body Diode) Pulsed Source Current ––– ––– 79 showing the integral reverse VSD (Body Diode) Diode Forward Voltage ––– ––– 1.3 V p-n junction diode. TJ = 25°C, IS = 6.0A, VGS = 0V trr Reverse Recovery Time ––– 43 65 ns Qrr Reverse Recovery Charge ––– 76 110 nC ton Forward Turn-On Time 2 c MOSFET symbol A D G TJ = 25°C, IF = 6.0A, VDD = 25V di/dt = 100A/µs S f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF7854PbF 100 100 10 BOTTOM 1 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 0.1 5.0V 0.01 10 BOTTOM 5.0V 1 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 0.001 0.1 0.1 1 10 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 1 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V T J = 150°C 10 T J = 25°C 1 VDS = 25V ≤60µs PULSE WIDTH 0.1 ID = 10A VGS = 10V 1.5 1.0 0.5 4 5 6 7 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 8 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF7854PbF 100000 VGS, Gate-to-Source Voltage (V) ID= 6.0A Coss = Cds + Cgd 10000 C, Capacitance (pF) 12.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Ciss 1000 Coss Crss 100 10 10.0 VDS= 64V VDS= 40V VDS= 16V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 5 10 15 20 25 30 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 150°C 10 T J = 25°C 1 100 100µsec 10 10msec 1 T A = 25°C 0.1 Tj = 150°C Single Pulse VGS = 0V 0.1 0.01 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1msec 1.2 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7854PbF 10 RD VDS VGS ID, Drain Current (A) 8 D.U.T. RG + -VDD 6 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 10% VGS Fig 9. Maximum Drain Current vs. Ambient Temperature tr td(on) t d(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 Thermal Response ( Z thJA ) 10 1 τJ 0.1 0.01 R1 R1 τJ τ1 R2 R2 τ1 τ2 τ2 τ3 τ3 τι (sec) Ri (°C/W) τA Ci= τi/Ri Ci= τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) R3 R3 τ 4.329 0.003565 30.099 1.1249 15.590 34.5 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.001 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7854PbF T J = 125°C 20 15 T J = 25°C 10 Vgs = 10V 5 0 10 20 30 40 50 60 70 80 40 RDS(on), Drain-to -Source On Resistance (m Ω) RDS(on), Drain-to -Source On Resistance ( mΩ) 25 ID = 6.0A 35 30 25 T J = 125°C 20 15 T J = 25°C 10 4 90 ID, Drain Current (A) VCC QGS QGD Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD 0.01Ω Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 14 16 450 VG Charge tp 12 QG VGS 1K 10 Fig 13. On-Resistance vs. Gate Voltage EAS , Single Pulse Avalanche Energy (mJ) DUT 0 8 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Drain Current L 6 A ID TOP 0.61A 0.75A BOTTOM 6.0A 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 15c. Maximum Avalanche Energy vs. Drain Current www.irf.com IRF7854PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) ' ,1&+(6 0,1 0$; $   $   E   F   '   (   %$6,& H H  %$6,& +   .   /   \ ƒ ƒ ',0 %  $          + >@ ( $ ; H H $ ;E >@ $ 0,//,0(7(56 0,1 0$;             %$6,& %$6,&       ƒ ƒ .[ƒ & \ >@ ;/ ;F  & $ % 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5)026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'(