PD - 96158
IRF8252PbF
Applications
Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
l
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg
25V 2.7m:@VGS = 10V 35nC
Benefits
l
l
l
l
l
l
l
l
Very Low Gate Charge
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
20V VGS Max. Gate Rating
100% tested for Rg
RoHS Compliant (Halogen Free)
Low Thermal Resistance
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Description
The IRF8252PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8252PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
25
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
±20
ID @ TA = 25°C
V
25
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
200
ID @ TA = 70°C
Units
20
c
PD @TA = 25°C
Power Dissipation
2.5
PD @TA = 70°C
Power Dissipation
1.6
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
A
W
W/°C
0.02
-55 to + 150
°C
Thermal Resistance
Parameter
RθJL
RθJA
g
Junction-to-Ambient fg
Junction-to-Drain Lead
Typ.
Max.
–––
20
–––
50
Units
°C/W
Notes through
are on page 9
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1
07/07/08
IRF8252PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Min. Typ. Max. Units
25
–––
–––
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.018
2.0
–––
2.7
Gate Threshold Voltage
–––
1.35
2.9
1.80
3.7
2.35
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-6.67
–––
IGSS
Gate-to-Source Forward Leakage
–––
–––
–––
–––
Gate-to-Source Reverse Leakage
Forward Transconductance
–––
89
–––
–––
mV/°C VDS = VGS, ID = 100µA
VDS = 20V, VGS = 0V
µA
VDS = 20V, VGS = 0V, TJ = 125°C
150
VGS = 20V
100
nA
-100
VGS = -20V
–––
S VDS = 13V, ID = 20A
Total Gate Charge
Pre-Vth Gate-to-Source Charge
–––
–––
35
10
53
–––
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
4.6
12
–––
–––
Qgodr
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
8.9
16
–––
–––
Qoss
Rg
Output Charge
Gate Resistance
–––
–––
26
0.61
–––
1.22
td(on)
tr
Turn-On Delay Time
Rise Time
–––
–––
23
32
–––
–––
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
19
12
–––
–––
Ciss
Coss
Input Capacitance
Output Capacitance
–––
–––
5305
1340
–––
–––
Crss
Reverse Transfer Capacitance
–––
725
–––
VGS(th)
∆VGS(th)
gfs
Qg
Qgs1
Qgs2
Qgd
V
Conditions
Drain-to-Source Breakdown Voltage
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A
mΩ
VGS = 4.5V, ID = 20A
V VDS = VGS, ID = 100µA
e
e
–––
1.0
VDS = 13V
nC
VGS = 4.5V
ID = 20A
See Figs. 15 & 16
nC
Ω
ns
pF
VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5V
ID = 20A
RG = 1.8Ω
See Fig. 18
VGS = 0V
VDS = 13V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
–––
Max.
231
Units
mJ
–––
20
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
ISM
(Body Diode)
Pulsed Source Current
–––
–––
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.0
V
p-n junction diode.
TJ = 25°C, IS = 20A, VGS = 0V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
19
12
29
18
ns
nC
TJ = 25°C, IF = 20A, VDD = 13V
di/dt = 230A/µs
ton
Forward Turn-On Time
2
c
3.1
A
200
A
MOSFET symbol
D
showing the
integral reverse
G
S
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF8252PbF
1000
1000
100
10
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
1
0.1
≤60µs PULSE WIDTH
0.01
Tj = 25°C
2.3V
BOTTOM
10
1
2.3V
≤60µs PULSE WIDTH
Tj = 150°C
0.1
0.001
0.1
1
10
0.1
100
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1.6
VDS = 15V
≤60µs PULSE WIDTH
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
T J = 150°C
10
T J = 25°C
1
0.1
ID = 25A
1.4
VGS = 10V
1.2
1.0
0.8
0.6
1
2
3
4
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF8252PbF
100000
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C, Capacitance (pF)
C oss = C ds + C gd
10000
Ciss
Coss
Crss
1000
100
ID= 20A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
1
10
100
0
20
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
80
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
T J = 25°C
10
60
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
40
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
100µsec
1msec
10
10msec
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
1.0
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS= 20V
VDS= 13V
1.2
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF8252PbF
2.5
VGS(th) , Gate Threshold Voltage (V)
30
ID, Drain Current (A)
25
20
15
10
5
ID = 250µA
2.0
ID = 100µA
1.5
1.0
0
25
50
75
100
125
-75 -50 -25
150
0
25
50
75 100 125 150
T J , Temperature ( °C )
T A , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
10
0.20
Ri (°C/W) τi (sec)
0.02127 0.000002
0.10
0.05
0.02040 0.000006
0.21216 0.000082
1
0.02
0.01
0.79696 0.001560
R1
R1
τJ
τJ
τ1
R2
R2
R3
R3
R4
R4
R5
R5
R6
R6
R7
R7
R8
R8
τ1
τ2
τ2
τ3
τ3
τ4
τ4
τ5
τ6
τ5
τ6
τ7
τ7
1E-005
0.0001
0.001
0.45152 0.006475
16.5590 45.68988
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
τA
26.2230 1.208856
Ci= τi/Ri
Ci= τi/Ri
0.1
6.31529 0.028913
τA
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF8252PbF
1000
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
7
ID = 20A
6
5
4
TJ = 125°C
3
2
T J = 25°C
ID
2.45A
8.0A
BOTTOM 20A
900
TOP
800
700
600
500
400
300
200
100
0
1
2
4
6
8
25
10
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V(BR)DSS
tp
15V
L
VDS
DUT
DRIVER
0
D.U.T
RG
IAS
20V
L
tp
0.01Ω
+
- VDD
1K
20K
VCC
S
A
I AS
Fig 15. Gate Charge Test Circuit
Fig 14. Unclamped Inductive Test Circuit
and Waveform
Id
Vds
Vgs
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 16. Gate Charge Waveform
6
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IRF8252PbF
D.U.T
Driver Gate Drive
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
VDS
90%
D.U.T.
+
- V DD
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
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10%
VGS
td(on)
tr
td(off) tf
Fig 18b. Switching Time Waveforms
7
IRF8252PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
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