IRF8707GTRPBF

PD - 96264 IRF8707GPbF HEXFET® Power MOSFET Applications Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems l VDSS 30V Benefits l l l l l l l l Very Low Gate Charge Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating 100% tested for Rg Lead-Free Halogen-Free RDS(on) max Qg 11.9m:@VGS = 10V 6.2nC A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Description The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707GPbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ± 20 9.1 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current ID @ TA = 25°C ID @ TA = 70°C Units V 11 c A 88 PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range W W/°C 0.02 -55 to + 150 °C Thermal Resistance Parameter RθJL Junction-to-Drain Lead RθJA Junction-to-Ambient f g Typ. Max. ––– 20 ––– 50 Units °C/W Notes  through … are on page 9 www.irf.com 1 07/10/09 IRF8707GPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ Min. Typ. Max. Units 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.022 9.3 ––– 11.9 Gate Threshold Voltage ––– 1.35 14.2 1.80 17.5 2.35 IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– -5.8 ––– IGSS Gate-to-Source Forward Leakage ––– ––– ––– ––– Gate-to-Source Reverse Leakage Forward Transconductance ––– 25 ––– ––– mV/°C VDS = VGS, ID = 25µA VDS = 24V, VGS = 0V µA VDS = 24V, VGS = 0V, TJ = 125°C 150 VGS = 20V 100 nA -100 VGS = -20V ––– S VDS = 15V, ID = 8.8A Total Gate Charge Pre-Vth Gate-to-Source Charge ––– ––– 6.2 1.4 9.3 ––– Post-Vth Gate-to-Source Charge Gate-to-Drain Charge ––– ––– 0.7 2.2 ––– ––– Qgodr Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 1.9 2.9 ––– ––– Qoss Rg Output Charge Gate Resistance ––– ––– 3.7 2.2 ––– 3.7 td(on) tr Turn-On Delay Time Rise Time ––– ––– 6.7 7.9 ––– ––– td(off) tf Turn-Off Delay Time Fall Time ––– ––– 7.3 4.4 ––– ––– Ciss Coss Input Capacitance Output Capacitance ––– ––– 760 170 ––– ––– Crss Reverse Transfer Capacitance ––– 82 ––– RDS(on) VGS(th) ∆VGS(th) gfs Qg Qgs1 Qgs2 Qgd V Conditions Drain-to-Source Breakdown Voltage VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 11A mΩ VGS = 4.5V, ID = 8.8A V VDS = VGS, ID = 25µA e e ––– 1.0 VDS = 15V nC VGS = 4.5V ID = 8.8A See Figs. 15 & 16 nC Ω ns pF VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 8.8A RG = 1.8Ω See Fig. 18 VGS = 0V VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. ––– Max. 53 Units mJ ––– 8.8 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– ISM (Body Diode) Pulsed Source Current ––– ––– VSD (Body Diode) Diode Forward Voltage ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 8.8A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge ––– ––– 12 13 18 20 ns nC TJ = 25°C, IF = 8.8A, VDD = 15V di/dt = 300A/µs ton Forward Turn-On Time 2 c 3.1 A 88 A MOSFET symbol D showing the integral reverse G S e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF8707GPbF 100 100 10 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V TOP 1 ≤60µs PULSE WIDTH 0.1 Tj = 25°C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 1 2.3V ≤60µs PULSE WIDTH 2.3V Tj = 150°C 0.01 0.1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 100 ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) T J = 150°C 10 T J = 25°C 1 VDS = 15V ≤60µs PULSE WIDTH 2 3 4 5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com VGS = 10V 1.5 1.0 0.5 0.1 1 ID = 11A 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF8707GPbF 10000 5.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 8.8A C, Capacitance (pF) C oss = C ds + C gd 1000 Ciss Coss Crss 100 VDS= 24V VDS= 15V 4.0 3.0 2.0 1.0 10 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 3 4 5 6 7 8 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000 ISD, Reverse Drain Current (A) 2 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150°C 10 T J = 25°C 1 1msec 0.1 100µsec 10 10msec 1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1 1.4 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF8707GPbF 12 VGS(th) , Gate Threshold Voltage (V) 2.5 ID, Drain Current (A) 10 8 6 4 2 2.2 1.9 1.6 50 75 100 125 ID = 25µA 1.3 0 25 ID = 250µA 1.0 150 -75 -50 -25 T A , Ambient Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 10 1 SINGLE PULSE ( THERMAL RESPONSE ) 0.1 PDM τJ 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 τA τ1 τ2 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci= τi/Ri 0.001 1E-006 1E-005 0.0001 0.001 τA Ri (°C/W) τi (sec) 2.2284 0.000169 7.0956 0.013738 25.4895 0.68725 15.1981 25.8 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF8707GPbF 250 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) 35 ID = 11A 30 25 20 TJ = 125°C 15 T J = 25°C 10 ID 0.67A 0.82A BOTTOM 8.80A TOP 200 150 100 5 50 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage V(BR)DSS tp 15V L VDS DUT DRIVER 0 D.U.T RG IAS 20V L tp 0.01Ω + - VDD 1K 20K VCC S A I AS Fig 15. Gate Charge Test Circuit Fig 14. Unclamped Inductive Test Circuit and Waveform Id Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 16. Gate Charge Waveform 6 www.irf.com IRF8707GPbF D.U.T Driver Gate Drive ƒ + - - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS V GS RG RD VDS 90% D.U.T. + - V DD V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit www.irf.com 10% VGS td(on) tr td(off) tf Fig 18b. Switching Time Waveforms 7 IRF8707GPbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ',0 %  $     + >@ (     $ 0,1     $     E     F     '     (     H %$6,& H ; H H ;E >@ $ $ 0,//,0(7(56 0$; $  ,1&+(6 0,1 0$; %$6,& %$6,& %$6,& +     .     /     \ ƒ ƒ ƒ ƒ .[ƒ & \ >@ & $ % ;/ ;F  )22735,17 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5)*3%) ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; )* '$7(&2'(