PD - 96262
IRF8721GPbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook Processor
Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
l Very Low Gate Charge
l Low R DS(on) at 4.5V VGS
l Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V V GS Max. Gate Rating
l Lead-Free
l Halogen-Free
Description
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg
30V 8.5m:@VGS = 10V 8.3nC
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
The IRF8721GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
30
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
ID @ TA = 25°C
V
14
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
110
ID @ TA = 70°C
Units
11
c
PD @TA = 25°C
Power Dissipation
2.5
PD @TA = 70°C
Power Dissipation
1.6
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
A
W
W/°C
0.02
-55 to + 150
°C
Thermal Resistance
Parameter
RθJL
Junction-to-Drain Lead
RθJA
Junction-to-Ambient
f
g
Typ.
Max.
–––
20
–––
50
Units
°C/W
Notes through
are on page 9
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1
07/10/09
IRF8721GPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
30
–––
–––
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.021
–––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
6.9
8.5
mΩ
VGS = 10V, ID = 14A
–––
10.6
12.5
VGS(th)
Gate Threshold Voltage
1.35
–––
2.35
V
VDS = VGS, ID = 25µA
∆VGS(th)
Gate Threshold Voltage Coefficient
–––
-6.2
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS = 24V, VGS = 0V
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
IGSS
gfs
Forward Transconductance
27
–––
–––
Qg
Total Gate Charge
–––
8.3
12
V
Conditions
BVDSS
VGS = 0V, ID = 250µA
VGS = 4.5V, ID
e
= 11A e
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
S
VDS = 15V, ID = 11A
Qgs1
Pre-Vth Gate-to-Source Charge
–––
2.0
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.0
–––
Qgd
Gate-to-Drain Charge
–––
3.2
–––
ID = 11A
Qgodr
See Fig. 16a and 16b
VDS = 15V
nC
Gate Charge Overdrive
–––
2.0
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
4.2
–––
Qoss
RG
Output Charge
–––
5.0
–––
nC
Gate Resistance
–––
1.8
Ω
td(on)
Turn-On Delay Time
–––
8.2
3.0
–––
tr
Rise Time
–––
11
–––
td(off)
Turn-Off Delay Time
–––
8.1
–––
tf
Fall Time
–––
7.0
–––
Ciss
Input Capacitance
–––
1040
–––
Coss
Output Capacitance
–––
229
–––
Crss
Reverse Transfer Capacitance
–––
114
–––
VGS = 4.5V
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ID = 11A
ns
RG = 1.8Ω
See Fig. 15a
VGS = 0V
pF
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
Max.
Units
–––
68
mJ
–––
11
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
–––
–––
3.1
ISM
(Body Diode)
Pulsed Source Current
–––
–––
112
showing the
integral reverse
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.0
V
p-n junction diode.
TJ = 25°C, IS = 11A, VGS = 0V
trr
Reverse Recovery Time
–––
14
21
ns
TJ = 25°C, IF = 11A, VDD = 15V
Qrr
Reverse Recovery Charge
–––
15
23
nC
di/dt = 300A/µs
ton
Forward Turn-On Time
2
c
MOSFET symbol
A
G
S
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF8721GPbF
1000
1000
100
BOTTOM
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
0.1
100
BOTTOM
10
2.3V
1
0.01
0.1
1
10
0.1
100
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
VDS = 15V
≤ 60µs PULSE WIDTH
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
≤ 60µs PULSE WIDTH
Tj = 150°C
≤ 60µs PULSE WIDTH
Tj = 25°C
2.3V
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
10
TJ = 150°C
1
TJ = 25°C
0.1
0.01
1.0
2.0
3.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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4.0
ID = 14A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF8721GPbF
16
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10000
Coss = Cds + Cgd
1000
Ciss
Coss
Crss
ID= 11A
VDS= 24V
VDS= 15V
12
8
4
0
100
1
10
0
100
5
1000
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
20
25
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
1msec
10
10msec
1
VGS = 0V
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
0.2
0.4
0.6
0.8
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
15
Qg, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1
10
1.0
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF8721GPbF
2.4
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
16
12
8
4
0
2.2
2.0
1.8
ID = 25µA
1.6
1.4
1.2
1.0
0.8
25
50
75
100
125
150
-75
-50
-25
TA, Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
0
25
50
75
100
125
150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage Vs. Temperature
100
Thermal Response ( ZthJA )
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
τJ
R1
R1
τJ
τ1
R2
R2
R3
R3
R4
R4
τ3
τ4
τa
τ1
τ2
τ2
τ3
τ4
Ci= τi/Ri
Ci i/Ri
0.1
Ri (°C/W) τι (sec)
1.935595 0.000148
7.021545 0.019345
26.61013 0.81305
14.43961
26.2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
16
300
ID = 14A
14
12
TJ = 125°C
10
8
TJ = 25°C
6
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
EAS, Single Pulse Avalanche Energy (mJ)
( Ω)
RDS (on), Drain-to -Source On Resistance m
IRF8721GPbF
ID
0.83A
1.05A
BOTTOM
11A
250
TOP
200
150
100
50
0
25
50
75
20V
V(BR)DSS
tp
DRIVER
L
D.U.T
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 14a. Unclamped Inductive Test Circuit
VDS
VGS
RG
RD
Fig 14b. Unclamped Inductive Waveforms
VDS
90%
D.U.T.
+
-VDD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
10%
VGS
td(on)
Fig 15a. Switching Time Test Circuit
6
150
Fig 13. Maximum Avalanche Energy
vs. Drain Current
15V
RG
125
Starting T J, Junction Temperature (°C)
Fig 12. On-Resistance vs. Gate Voltage
VDS
100
tr
t d(off)
tf
Fig 15b. Switching Time Waveforms
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IRF8721GPbF
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2µF
12V
.3µF
+
V
- DS
D.U.T.
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Qgodr
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
D.U.T
Driver Gate Drive
P.W.
+
+
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
*
•
•
•
•
D=
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
RG
Qgs2 Qgs1
Qgd
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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7
IRF8721GPbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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