PD - 96246
IRF8852PbF
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HEXFET® Power MOSFET
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
Lead-Free
VDSS
RDS(on) max
11.3m @VGS = 10V
15.4m @VGS = 4.5V
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:
25V
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that
International Rectifier is well known for, provides the
designer with an extremely efficient and reliable
device for battery and load management.
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6
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Id
7.8A
6.2A
TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space is
at a premium. The low profile (
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