PD - 97465
IRF9317PbF
HEXFET® Power MOSFET
VDS
-30
RDS(on) max
RDS(on) max
:
6.6
m
10.2
m
(@VGS = -10V)
(@VGS = -4.5V)
V
:
Qg (typical)
31
nC
ID
-16
A
(@TA = 25°C)
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features
Resulting Benefits
Industry-Standard SO8 Package
Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
Orderable part number
Package Type
IRF9317PbF
IRF9317TRPbF
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
-30
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
-16
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
-13
IDM
Pulsed Drain Current
-130
PD @TA = 25°C
Power Dissipation
PD @TA = 70°C
f
Power Dissipation f
c
2.5
1.6
Linear Derating Factor
0.02
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Units
V
A
W
W/°C
°C
Notes through are on page 2
www.irf.com
1
3/5/10
IRF9317PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
0.022
5.4
8.3
-1.8
-5.7
–––
–––
–––
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
36
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
31
61
9
14
14
19
64
160
120
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2820
640
370
Static Drain-to-Source On-Resistance
h
h
h
h
h
Conditions
Min. Typ. Max. Units
–––
V VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
VGS = -10V, ID = -16A
6.6
mΩ
VGS = -4.5V, ID = -13A
10.2
-2.4
V
VDS = VGS, ID = -50µA
––– mV/°C
VDS = -24V, VGS = 0V
-1.0
µA
VDS = -24V, VGS = 0V, TJ = 125°C
-150
VGS = -20V
-100
nA
VGS = 20V
100
–––
S VDS = -10V, ID = -13A
e
e
–––
92
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
nC
VDS = -15V, VGS = -4.5V, ID = - 13A
VGS = -10V
VDS = -15V
ID = -13A
Ω
ns
pF
VDD = -15V, VGS = -4.5V
ID = -1.0A
RG = 6.8Ω
e
See Figs. 20a &20b
VGS = 0V
VDS = -15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
c
d
Typ.
Max.
Units
–––
–––
330
-13
mJ
A
Diode Characteristics
Parameter
Conditions
Min. Typ. Max. Units
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
(Body Diode)
–––
–––
-2.5
–––
–––
-130
MOSFET symbol
A
c
showing the
integral reverse
p-n junction diode.
D
G
S
e
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -2.5A, VGS = 0V
trr
Reverse Recovery Time
–––
33
50
ns
TJ = 25°C, IF = -2.5A, VDD = -24V
Qrr
Reverse Recovery Charge
–––
30
45
nC
di/dt = 100A/µs
e
Thermal Resistance
Parameter
RθJL
RθJA
Junction-to-Drain Lead
Junction-to-Ambient
f
g
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 4.3mH, RG = 25Ω, IAS = -13A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
2
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IRF9317PbF
1000
1000
TOP
100
BOTTOM
10
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
≤60µs PULSE WIDTH
Tj = 25°C
1
0.1
100
BOTTOM
10
1
-2.3V
≤60µs PULSE WIDTH
Tj = 150°C
-2.3V
0.01
0.1
0.1
1
10
100
0.1
-VDS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
1000
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-ID, Drain-to-Source Current (A)
1
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TJ = 150°C
10
TJ = 25°C
1
0.1
VDS = -10V
≤ 60µs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
5.0
ID = -16A
VGS = -10V
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0
-VGS, Gate-to-Source Voltage (V)
100000
Fig 4. Normalized On-Resistance vs. Temperature
14
-VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Ciss
Coss
1000
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance(pF)
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
Crss
ID= -13A
VDS= -24V
VDS= -15V
VDS= -6.0V
12
10
8
6
4
2
0
100
0
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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20
40
60
80
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRF9317PbF
-ID, Drain-to-Source Current (A)
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
TJ = 150°C
10
TJ = 25°C
1
1msec
10
DC
10msec
1
TA = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
-VSD, Source-to-Drain Voltage (V)
10
100
Fig 8. Maximum Safe Operating Area
2.5
-VGS(th), Gate threshold Voltage (V)
20
-ID, Drain Current (A)
1
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
15
10
5
2.0
ID = -50µA
1.5
1.0
0.5
0
25
50
75
100
125
-75 -50 -25
150
0
25
50
75 100 125 150
TJ , Temperature ( °C )
TA , Ambient Temperature (°C)
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Ambient Temperature
100
Thermal Response ( ZthJA ) °C/W
-ISD , Reverse Drain Current (A)
1000
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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18
( Ω)
RDS(on), Drain-to -Source On Resistance m
RDS(on), Drain-to -Source On Resistance (mΩ)
IRF9317PbF
ID = -13A
16
14
12
10
TJ = 125°C
8
6
TJ = 25°C
4
2
4
6
8
10
12
14
16
18
20
16
VGS = -4.5V
12
8
VGS = -10V
4
20
0 10 20 30 40 50 60 70 80 90 100110120
-ID, Drain Current (A)
-VGS, Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance vs. Drain Current
1000
1400
ID
TOP
-1.5A
-2.3A
BOTTOM -13A
1200
1000
800
Single Pulse Power (W)
EAS , Single Pulse Avalanche Energy (mJ)
Fig 12. On-Resistance vs. Gate Voltage
800
600
400
600
400
200
200
0
0
25
50
75
100
125
1E-5
150
1E-4
Fig 14. Maximum Avalanche Energy vs. Drain Current
Driver Gate Drive
+
-
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
di/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
+
-
Re-Applied
Voltage
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Body Diode
Reverse Polarity of D.U.T for P-Channel
VDD
Forward Drop
Inductor
Current
Inductor Curent
Ripple ≤ 5%
*
P.W.
Period
*
•
•
•
•
1E+0
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
1E-1
Fig 16. Typical Power vs. Time
+
RG
1E-2
Time (sec)
Starting TJ , Junction Temperature (°C)
D.U.T *
1E-3
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
www.irf.com
5
IRF9317PbF
Id
Vds
Vgs
L
D
D
GG
0
20K
1K
VCC
DUT
Vgs(th)
SS
Qgodr
Fig 18a. Gate Charge Test Circuit
I AS
D.U.T
RG
IAS
-V
GS
-20V
tp
Qgs2 Qgs1
Fig 18b. Gate Charge Waveform
L
VDS
Qgd
VDD
A
DRIVER
0.01Ω
tp
V(BR)DSS
15V
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
VDS
RD
td(on)
VGS
RG
tr
t d(off)
tf
VGS
D.U.T.
10%
+
V DD
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 20a. Switching Time Test Circuit
6
90%
VDS
Fig 20b. Switching Time Waveforms
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IRF9317PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
7
6
6
H
E
0.25 [.010]
1
2
3
A
4
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
e1
6X
e
e1
C
1.27 BAS IC
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILLIMETERS
MAX
A
5
INCHES
MIN
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
8X 0.72 [.028]
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES].
4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD F OR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DIS GNAT ES LEAD - FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
7
IRF9317PbF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
†
Qualification Information
Consumer ††
Qualification level
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC JESD47F††† guidelines)
MSL1
SO-8
(per JEDEC J-STD-020D†††)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.3/2010
8
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
