IRF9383MTRPBF

IRF9383MPbF DirectFET® P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V Features and Benefits Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 67nC 29nC 9.4nC 315nC 59nC -1.8V l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, no Bromide and no Halogen S l Common-Drain P-Channel MOSFETs Provides D High Level of Integration and Very Low RDS(on) G S D DirectFET™ ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP MC Description The IRF9383MTRPbF combines the latest HEXFET ® P-Channel Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. Orderable part number Package Type IRF9383MTRPbF DirectFET Medium Can IRF9383MTR1PbF Standard Pack Form Quantity ® Tape and Reel 4800 ® Tape and Reel 1000 DirectFET Medium Can Note "TR1" suffix EOL notice #264 Absolute Maximum Ratings Max. Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM Pulsed Drain Current g e e f Typical RDS(on) (mΩ) 12 ID = -22A 10 8 6 TJ = 125°C 4 2 T J = 25°C 0 2 4 6 8 10 12 14 16 18 20 -VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET® Website. ƒ Surface mounted on 1 in. square Cu board, steady state. 1 www.irf.com © 2015 International Rectifier Units -30 ±20 -22 -17 -160 -180 -VGS, Gate-to-Source Voltage (V) VDS 14.0 ID= -18A 12.0 V A VDS= -24V VDS= -15V VDS= -6.0V 10.0 8.0 6.0 4.0 2.0 0.0 0 20 40 60 80 100 120 140 160 180 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. Submit Datasheet Feedback June 2, 2015 IRF9383MPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. VGS = 0V, ID = -250μA Reference to 25°C, ID = -1.0mA V/°C VGS = -10V, ID = -22A mΩ VGS = -4.5V, ID = -18A Drain-to-Source Breakdown Voltage -30 ΔΒVDSS/ΔTJ RDS(on) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– 0.0159 ––– ––– 2.3 2.9 VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient ––– -1.3 ––– 3.8 -1.8 -5.9 Drain-to-Source Leakage Current ––– ––– ––– ––– IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– gfs Qg Forward Transconductance Total Gate Charge Total Gate Charge 56 ––– ––– ––– 130 67 Pre- Vth Gate-to-Source Charge Post -Vth Gate-to-Source Charge ––– ––– 12 9.4 Gate-to-Drain Charge Gate Charge Overdrive Switch charge (Qgs2 + Qgd) ––– ––– 29 16.6 ––– ––– Output Charge Gate Resistance ––– ––– ––– 38.4 59 6.5 ––– ––– ––– Turn-On Delay Time Rise Time ––– ––– 29 160 ––– ––– Turn-Off Delay Time Fall Time Input Capacitance ––– ––– ––– 115 110 7305 ––– ––– ––– Output Capacitance Reverse Transfer Capacitance ––– ––– 1780 1030 ––– ––– Min. Typ. Max. Units ΔVGS(th)/ΔTJ IDSS Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Conditions Typ. Max. Units BVDSS ––– ––– 4.8 -2.4 ––– V h h V VDS = VGS, ID = -150μA mV/°C VDS = -24V, VGS = 0V -1.0 μA VDS = -24V, VGS = 0V, TJ = 125°C -150 VGS = -20V -100 nA VGS = 20V 100 VDS = -10V, ID = -18A ––– S VDS = -15V, VGS = -10V, ID = -18A ––– ––– VDS = -15V ––– ––– nC VGS = -4.5V ID = -18A See Fig.15 nC VDS = -24V, VGS = 0V Ω VDD = -15V, VGS = -4.5V ns pF ID = -18A h RG = 1.8Ω See Fig.17 VGS = 0V VDS = -15V ƒ = 1.0KHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) Pulsed Source Current ISM g (Body Diode) Diode Forward Voltage VSD trr Reverse Recovery Time Reverse Recovery Charge Qrr ––– ––– -114 ––– ––– -180 ––– ––– -1.2 V ––– ––– 52 315 78 470 ns nC A Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = -18A, VGS = 0V TJ = 25°C, IF = -18A, ,VDD = -15V h di/dt = 500A/μs h Notes: † Pulse width ≤ 400μs; duty cycle ≤ 2%. 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 IRF9383MPbF Absolute Maximum Ratings Max. Parameter e e f PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TP TJ TSTG Units 2.1 1.3 113 270 -40 to + 150 Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range W °C Thermal Resistance e i j fk RθJA RθJA RθJA RθJC RθJ-PCB Parameter Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case , Junction-to-PCB Mounted Linear Derating Factor e Typ. Max. Units ––– 12.5 20 ––– 1.0 60 ––– ––– 1.1 ––– °C/W 0.02 W/°C 100 Thermal Response ( Z thJA ) 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 τJ 0.01 0.001 0.0001 1E-006 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 τ2 τ1 τ2 τ3 τ4 τ3 Ci= τi/Ri Ci= τi/Ri 0.0001 0.001 τ4 τA τi (sec) 2.7194 0.0138004 23.1599 55.766563 10.2579 0.6520047 23.6469 7.7259631 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 Ri (°C/W) τA 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  Notes: ‡ Used double sided cooling, mounting pad with large heatsink. ˆ Mounted on minimum footprint full size board with metalized ‰ Rθ is measured at TJ of approximately 90°C. back and with small clip heatsink. ƒ Surface mounted on 1 in. square Cu board (still air). 3 ‰ Mounted to a PCB with small clip heatsink (still air) www.irf.com © 2015 International Rectifier ‰ Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) Submit Datasheet Feedback June 2, 2015 IRF9383MPbF 1000 1000 100 BOTTOM 10 TOP -ID, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) TOP VGS -10V -5.0V -4.5V -3.5V -3.25V -3.0V -2.75V -2.5V 100 1 -2.5V 0.1 ≤60μs PULSE WIDTH BOTTOM 10 -2.5V ≤60μs PULSE WIDTH Tj = 25°C Tj = 150°C 1 0.01 0.1 1 10 0.1 100 Fig 4. Typical Output Characteristics 10 100 Fig 5. Typical Output Characteristics 1000 1.6 VDS = -15V ≤60μs PULSE WIDTH ID = -22A Typical RDS(on) (Normalized) -I D, Drain-to-Source Current (A) 1 -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) 100 10 T J = 150°C T J = 25°C T J = -40°C 1.0 1.4 V GS = -10V V GS = -4.5V 1.2 1.0 0.8 0.6 1 2 3 4 5 12 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd T J = 25°C Typical RDS(on) ( mΩ) Ciss Coss Crss 1000 Vgs = -3.5V Vgs = -4.5V Vgs = -5.0V Vgs = -6.0V Vgs = -8.0V Vgs = -10V Vgs = -12V Vgs = -15V 10 C oss = C ds + C gd 10000 20 40 60 80 100 120 140 160 Fig 7. Normalized On-Resistance vs. Temperature Fig 6. Typical Transfer Characteristics 100000 -60 -40 -20 0 T J , Junction Temperature (°C) -VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) VGS -10V -5.0V -4.5V -3.5V -3.25V -3.0V -2.75V -2.5V 8 6 4 100 2 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 www.irf.com © 2015 International Rectifier 0 20 40 60 80 100 120 140 160 180 -I D, Drain Current (A) Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage Submit Datasheet Feedback June 2, 2015 IRF9383MPbF 1000 100 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 1000 T J = 150°C T J = 25°C T J = -40°C 10 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 10msec 1 DC 0.1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.01 0 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.1 Fig 10. Typical Source-Drain Diode Forward Voltage 15 10 5 2.4 2.2 2.0 1.8 1.6 1.4 100 125 ID = -150μA ID = -250μA ID = -1.0mA ID = -1.0A 1.2 1.0 0 75 100 2.6 -Typical VGS(th) Gate threshold Voltage (V) 20 50 10 Fig 11. Maximum Safe Operating Area 25 25 1 -V DS, Drain-to-Source Voltage (V) -VSD, Source-to-Drain Voltage (V) -I D, Drain Current (A) 100μsec 1msec -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature Fig 13. Typical Threshold Voltage vs. Junction Temperature EAS , Single Pulse Avalanche Energy (mJ) 2500 ID -1.6A -2.3A BOTTOM -18A TOP 2000 1500 1000 500 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 IRF9383MPbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) SS Qgodr Fig 17a. Gate Charge Test Circuit I AS D.U.T RG IAS -V GS -20V tp Qgs2 Qgs1 Fig 17b. Gate Charge Waveform L VDS Qgd VDD A DRIVER 0.01Ω tp V(BR)DSS 15V Fig 18b. Unclamped Inductive Waveforms Fig 18a. Unclamped Inductive Test Circuit VDS RD td(on) VGS RG D.U.T. - + t d(off) tf 10% V DD -V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 19a. Switching Time Test Circuit 6 tr VGS www.irf.com © 2015 International Rectifier 90% VDS Fig 19b. Switching Time Waveforms Submit Datasheet Feedback June 2, 2015 IRF9383MPbF D.U.T * Driver Gate Drive + ƒ + ‚ - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG • • • • di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. V DD + Re-Applied Voltage - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode InductorCurent Current Inductor VDD Forward Drop ISD Ripple ≤ 5% * * VGS = 5V for Logic Level Devices Reverse Polarity of D.U.T for P-Channel Fig 20. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs DirectFET® Board Footprint, MX Outline (Medium Size Can, X-Designation). Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®. This includes all recommendations for stencil and substrate designs. G=GATE D=DRAIN S=SOURCE D D S G S D 7 www.irf.com © 2015 International Rectifier D Submit Datasheet Feedback June 2, 2015 IRF9383MPbF DirectFET® Outline Dimension, MX Outline (Medium Size Can, X-Designation). Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®. This includes all recommendations for stencil and substrate designs. DIMENSIONS CODE A B C D E F G H J K L M R P METRIC MIN MAX 6.25 6.35 4.80 5.05 3.85 3.95 0.35 0.45 0.68 0.72 0.68 0.72 1.38 1.42 0.80 0.84 0.38 0.42 0.88 1.02 2.28 2.42 0.59 0.70 0.03 0.08 0.08 0.17 IMPERIAL MIN MAX 0.246 0.250 0.199 0.189 0.156 0.152 0.018 0.014 0.028 0.027 0.028 0.027 0.054 0.056 0.031 0.033 0.017 0.015 0.040 0.035 0.095 0.090 0.028 0.023 0.001 0.003 0.007 0.003 Dimensions are shown in millimeters (inches) DirectFET® Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 IRF9383MPbF DirectFET® Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF9383MTRPBF). For 1000 parts on 7" reel, order IRF9383MTR1PBF CODE A B C D E F G H REEL DIMENSIONS STANDARD OPTION (QTY 4800) METRIC IMPERIAL MIN MAX MIN MAX 330 N.C 12.992 N.C 20.2 N.C 0.795 N.C 12.8 13.2 0.504 0.520 1.5 N.C 0.059 N.C 100.0 N.C 3.937 N.C N.C 18.4 N.C 0.724 12.4 14.4 0.488 0.567 11.9 15.4 0.469 0.606 LOADED TAPE FEED DIRECTION NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS METRIC IMPERIAL MIN MAX MAX MIN 0.311 0.319 8.10 7.90 0.154 4.10 0.161 3.90 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.70 6.50 0.059 N.C N.C 1.50 0.059 0.063 1.50 1.60 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 IRF9383MPbF † Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant † †† ††† Consumer †† (per JEDEC JESD47F††† guidelines) MSL1 DirectFET® (per JEDEC J-STD-020D†††) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Revision History Date Comments • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264). 2/17/2014 • Updated data sheet with new IR corporate template. 2/25/2014 • Change MSL3 to MSL1, on page 9. • Updated schematics from "N-Channel" to "P-Channel" on page 1. 6/2/2015 • Updated "IFX logo" on page 1 and page 10.. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 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