IRF9388PBF

IRF9388PbF HEXFET® Power MOSFET VDS -30 VGS max ±25 RDS(on) max (@ VGS = -10V) 11.9 ID (@TA = 25°C) -12 V m A SO-8 Applications Adaptor Input Switch for Notebook PC Features 25V VGS max Industry-Standard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Base part number Package Type IRF9388EPbF SO-8  Resulting Benefits Direct Drive at High VGS Multi-Vendor Compatibility Environmentally Friendlier Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel Note 4000 Absolute Maximum Ratings Parameter Drainto-Source Voltage Gate-to-Source Voltage Max. -30 ± 25 Units V ID @ TA = 25°C ID @ TA= 70°C IDM Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V -12 -9.6 -96 A PD @TA = 25°C PD @TA = 70°C Power Dissipation  Power Dissipation  Linear Derating Factor Operating Junction and Storage Temperature Range 2.5 1.6 W 0.02 -55 to + 150 W/°C °C VDS VGS TJ TSTG Pulsed Drain Current  Notes  through  are on page 2 1 Rev. 2.1, 2021-10-01 IRF9388PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient IDSS Drain-to-Source Leakage Current IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge  Total Gate Charge  Gate to Source Charge  Gate to Drain Charge  Gate Resistance  Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Avalanche Characteristics EAS IAR Min. Typ. -30 ––– ––– 0.021 ––– 8.5 ––– 10 -1.3 -1.8 ––– -5.8 ––– ––– ––– ––– ––– ––– ––– ––– 20 ––– ––– 18 ––– 35 ––– 5.3 ––– 8.5 ––– 15 ––– 19 ––– 57 ––– 80 ––– 66 ––– 1680 ––– 350 ––– 220 Parameter Single Pulse Avalanche Energy  Avalanche Current  Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA ––– m VGS = -20V, ID = -12A 11.9 VGS = -10V, ID = -12A -2.4 V V = VGS, ID = -25µA ––– mV/°C DS -1.0 VDS = -24V, VGS = 0V µA -150 VDS = -24V, VGS = 0V,TJ = 125°C 10 µA VGS = 25V -10 VGS =-25 V ––– S VDS = -10V, ID = -9.6A ––– VDD = -15V,VGS = -4.5V,ID = -9.6A VGS = -10V, 52 VDD = -15V ––– ––– ID = -9.6A –––  ––– VDD = -15V, VGS = -4.5V  ns ID = -1.0A ––– ––– RG= 6.8 See Figs.20a & 20b ––– ––– VGS = 0V pF VDS = -25V ––– ƒ = 1.0MHz ––– Typ. Max. Units ––– ––– 120 -9.6 mJ A Min. ––– Typ. ––– Max. -2.5 ––– ––– -96 ––– ––– ––– ––– 51 35 -1.2 76 53 Units A V ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = -2.5A, VGS = 0V  TJ = 25°C, IF = -2.5A, VDD = -24V di/dt = 100A/µs  Thermal Resistance RJL RJA Parameter Junction-to-Drain Lead  Junction-to-Ambient  Typ. ––– ––– Max. 20 50 Units °C/W Notes:  Repetitive rating; pulse width limited by max. junction temperature.  Starting TJ = 25°C, L = 2.6mH, RG = 50, IAS = -9.6A.  Pulse width  400µs; duty cycle  2%.  When mounted on 1 inch square copper board.  Rq is measured at TJ of approximately 90°C.  For DESIGN AID ONLY, not subject to production testing. 2 Rev. 2.1, 2021-10-01 IRF9388PbF Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance vs. Temperature Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Rev. 2.1, 2021-10-01 IRF9388PbF Fig 7. Typical Source-Drain Diode Forward Voltage Fig 9. Maximum Drain Current vs. Ambient Tempera- Fig 8. Maximum Safe Operating Area Fig 10. Threshold Voltage Vs. Te perature Fig 11. Maximum Effective Transient Thermal Impedance, Junction -to4 Rev. 2.1, 2021-10-01 IRF9388PbF Fig 12. Maximum Avalanche Energy vs. Drain Curre Fig 14. On– Resistance vs. Gate Voltage 5 Fig 13. Typical Power vs. Time Fig 15. Typical On-Resistance vs. Drain Current Rev. 2.1, 2021-10-01 IRF9388PbF 6 Rev. 2.1, 2021-10-01 IRF9388PbF SO-8 Package Outline Di e sio s are show i Mosfet & Fetky illi eters i ches SO-8 Part Marking E X A M P L E : T H IS I S A N I R F 7 1 0 1 ( M O S F E T ) IN T E R N A T IO N A L R E C T I F IE R LO G O XXXX F7101 D A T E C O D E (Y W W ) P = D IS G N A T E S L E A D - F R E E P R O D U C T ( O P T IO N A L ) Y = L A S T D IG IT O F T H E Y E A R W W = W EEK A = A S S E M B L Y S IT E C O D E LO T C O D E PART NUM BER Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 Rev. 2.1, 2021-10-01 IRF9388PbF SO-8 Tape and Reel Di e sio s are show i illi eters i ches TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information† Qualification Level Moisture Sensitivity Level RoHS Compliant SO-8 Consumer (per JEDEC JESD47F guidelines) MSL1 (per JEDEC J-STD-020D††) Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date Rev. 10/01/2021 2.1 8 Comments  Updated IDM in SOA curve  Updated datasheet based on IFX template Rev. 2.1, 2021-10-01 IRF9388PbF Trademarks of Infineon Technologies AG µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C ™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL ™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition - 4Published by Infineon Technologies AG Munich, Germany © Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: erratum@infineon.com Document reference ifx IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics Beschafenheitsgarantie . For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies ofice www.infineon.com . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Please note that this product is not qualified according to the AEC Q or AEC Q documents of the Automotive Electronics Council. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staf. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 9 WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies ofice. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. Rev. 2.1, 2021-10-01