IRF9389PbF
N-CH
30
V DS
R DS(on) max
27
Qg (typical)
6.8
HEXFET® Power MOSFET
P-CH
-30
64
8.1
V
S1
m
nC
N-CHANNEL MOSFET
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
P-CHANNEL MOSFET
ID
(@TA = 25°C)
6.8
-4.6
A
SO-8
Top View
Applications
l
High and Low Side Switches for Inverter
l
High and Low Side Switches for Generic Half-Bridge
Features
Benefits
High and low-side MOSFETs in a single package
Increased power density
High-side P-Channel MOSFET
Easier drive circuitry
Industry-standard pinout
results in Multi-vendor compatibility
Compatible with existing surface mount techniques
Easier manufacturing
RoHS compliant containing no Lead, no Bromide and no Halogen
Environmentally friendlier
MSL1, Consumer qualification
Increased reliability
Base Part Number
Package Type
IRF9389PbF
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable part number
IRF9389PbF
IRF9389TRPbF
Absolute Maximum Ratings
Parameter
V GS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
P D @TA = 25°C
P D @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
Operating Junction and
Storage Temperature Range
TSTG
Thermal Resistance
Parameter
RJL
Junction-to-Drain Lead
RJA
Junction-to-Ambient
c
e
1
f
www.irf.com © 2012 International Rectifier
Max.
N-Channel
P-Channel
±20
±20
6.8
-4.6
5.4
-3.7
34
-23
2.0
1.3
0.016
-55 to + 150
Typ.
–––
–––
Max
20
62.5
Units
V
A
W
W/°C
°C
Units
°C/W
January 14, 2013
IRF9389PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
VDSS/ TJ Breakdown Voltage Temp. Coefficient
RDS(on)
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Static Drain-to-Source On-Resistance
P-Ch
Gate Threshold Voltage
VGS(th)
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Qg
Total Gate Charge
Q gs
Gate-to-Source Charge
Q gd
Gate-to-Drain ("Miller") Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
Typ.
Max.
Units
30
-30
–––
–––
–––
–––
–––
–––
–––
–––
0.03
0.02
22
33
51
82
–––
–––
–––
–––
27
40
64
103
V
V/°C
m
m
N-Ch
1.3
1.8
2.3
P-Ch
-1.3
-1.8
-2.3
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
–––
–––
–––
–––
8.2
4.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
8.1
1.4
1.3
0.98
2.1
2.2
9.4
5.1
8.0
4.8
14
4.9
17
3.9
15
398
383
82
104
36
64
1.0
-1.0
150
-150
100
-100
-100
100
–––
–––
14
16
–––
–––
–––
–––
4.4
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
Typ.
Max.
Units
–––
–––
2.0
A
-2.0
Conditions
VGS = 0V, ID = 250μA
VGS = 0V, ID = -250μA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 6.8A
VGS = 4.5V, ID = 5.4A
VGS = -10V, ID = -4.6A
VGS = -4.5V, ID = -3.7A
VDS = VGS , ID = 10μA
d
d
d
d
VDS = VGS , ID = -10μA
μA
nA
S
nC
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VDS = -24V, VGS = 0V, T J = 125°C
VGS = 20V
VGS = -20V
VGS = -20V
VGS = 20V
VDS = 15V, ID = 5.4A
VDS = -15V, ID = -3.7A
N-Channel
VGS = 10V, VDS = 15V, ID = 6.8A
P-Channel
VGS = -10V, VDS = -15V, ID = -4.6A
ns
N-Channel
VDD = 15V, VGS = 4.5V
ID = 1.0A, RG = 6.2
d
P-Channel
VDD = -15V, VGS = -4.5V
ID = -1.0A, RG = 6.8
pF
d
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0KHz
Diode Characteristics
Parameter
IS
Continuous Source Current (Body DiodeN-Ch
ISM
Pulsed Source Current (Body Diode)
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Q rr
P-Ch
–––
–––
N-Ch
–––
–––
34
P-Ch
–––
–––
-23
N-Ch
–––
–––
1.2
P-Ch
–––
–––
-1.2
N-Ch
–––
8.4
13
P-Ch
–––
11
17
N-Ch
–––
2.3
3.5
P-Ch
–––
4.8
7.2
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 16)
Pulse width 400μs; duty cycle 2%.
2
www.irf.com © 2012 International Rectifier
V
Conditions
T J = 25°C, IS = 2.0A, VGS = 0V
d
d
T J = 25°C, IS = -2.0A, VGS = 0V
ns
N-Channel: TJ = 25°C, IF = 2.0A,
VDD = 15V, di/dt = 102/μs
nC
d
P-Channel: TJ = 25°C, IF = -2.0A,
VDD = -15V, di/dt = 102/μs
d
Surface mounted on 1 in square Cu board
R is measured at TJ approximately 90°C
January 14, 2013
IRF9389PbF
N-Channel
100
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
7.5V
6.5V
5.5V
4.5V
4.0V
3.5V
3.0V
2.75V
10
2.75V
BOTTOM
10
2.75V
60μs PULSE WIDTH
60μs PULSE WIDTH
Tj = 150°C
Tj = 25°C
1
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
7.5V
6.5V
5.5V
4.5V
4.0V
3.5V
3.0V
2.75V
T J = 150°C
T J = 25°C
1
VDS = 15V
60μs PULSE WIDTH
0.1
ID = 5.4A
VGS = 4.5V
1.5
1.0
0.5
1
2
3
4
5
6
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
www.irf.com © 2012 International Rectifier
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
January 14, 2013
IRF9389PbF
N-Channel
10000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 6.8A
C, Capacitance (pF)
C oss = C ds + C gd
1000
Ciss
Coss
100
Crss
10
12.0
VDS= 24V
VDS= 15V
10.0
VDS= 6.0V
8.0
6.0
4.0
2.0
0.0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
100
T J = 150°C
10
TJ = 25°C
1
3
4
5
6
7
8
9
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
ISD, Reverse Drain Current (A)
2
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
1msec
10
1
0.1
100μsec
10msec
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1
www.irf.com © 2012 International Rectifier
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
January 14, 2013
IRF9389PbF
N-Channel
V GS
6
D.U.T.
RG
5
ID, Drain Current (A)
RD
V DS
7
+
VDD
-
4
VGS
Pulse Width µs
Duty Factor
3
2
Fig 10a. Switching Time Test Circuit
1
VDS
0
25
50
75
100
125
150
90%
T A , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
100
RDS(on), Drain-to -Source On Resistance ( m)
RDS(on) , Drain-to -Source On Resistance (m)
Fig 10b. Switching Time Waveforms
ID = 6.8A
80
60
40
20
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 11. Typical On-Resistance vs. Gate
Voltage
5
www.irf.com © 2012 International Rectifier
120
110
100
90
80
70
60
Vgs = 4.5V
50
Vgs = 10V
40
30
20
0
5
10
15
20
25
30
35
40
45
ID, Drain Current (A)
Fig 12. Typical On-Resistance vs. Drain
Current
January 14, 2013
IRF9389PbF
N-Channel
20000
1.8
16000
1.6
Power (W)
VGS(th) , Gate threshold Voltage (V)
2.0
1.4
ID = 10μA
1.2
12000
8000
1.0
4000
0.8
0.6
-75 -50 -25
0
25
50
75 100 125 150
0
1E-8
1E-7
1E-6
T J , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
1E-5
1E-4
1E-3
1E-2
Time (sec)
Fig 14. Typical Power vs. Time
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
50K
12V
.2F
.3F
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
Fig 15a. Basic Gate Charge Waveform
6
www.irf.com © 2012 International Rectifier
IG
ID
Current Sampling Resistors
Fig 15b. Gate Charge Test Circuit
January 14, 2013
IRF9389PbF
N and P-Channel
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
0.001
1E-006
1E-005
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 16. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
7
www.irf.com © 2012 International Rectifier
January 14, 2013
IRF9389PbF
P-Channel
100
100
10
BOTTOM
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS
-8.0V
-7.0V
-6.0V
-5.0V
-4.5V
-3.5V
-3.0V
-2.75V
1
-2.75V
60μs PULSE WIDTH
10
BOTTOM
1
VGS
-8.0V
-7.0V
-6.0V
-5.0V
-4.5V
-3.5V
-3.0V
-2.75V
-2.75V
60μs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
0.1
0.1
1
10
0.1
100
Fig 17. Typical Output Characteristics
100
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
10
Fig 18. Typical Output Characteristics
100
10
T J = 150°C
TJ = 25°C
1
VDS = -15V
60μs PULSE WIDTH
0.1
1.4
ID = -3.7A
VGS = -4.5V
1.2
1.0
0.8
0.6
1
2
3
4
5
6
7
-V GS, Gate-to-Source Voltage (V)
Fig 19. Typical Transfer Characteristics
8
1
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
www.irf.com © 2012 International Rectifier
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 20. Normalized On-Resistance
vs. Temperature
January 14, 2013
IRF9389PbF
P-Channel
10000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
-V GS, Gate-to-Source Voltage (V)
ID= -4.6A
C, Capacitance (pF)
C oss = C ds + C gd
1000
Ciss
Coss
Crss
100
12.0
VDS= -24V
VDS= -15V
10.0
VDS= -6.0V
8.0
6.0
4.0
2.0
0.0
10
1
10
0
100
2
100
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100.00
10.00
T J = 150°C
TJ = 25°C
1.00
6
8
10
12
Fig 22. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 21. Typical Capacitance vs.
Drain-to-Source Voltage
0.10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1msec
10
100μsec
10msec
1
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-VSD, Source-to-Drain Voltage (V)
Fig 23. Typical Source-Drain Diode
Forward Voltage
9
4
QG Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
www.irf.com © 2012 International Rectifier
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 24. Maximum Safe Operating Area
January 14, 2013
IRF9389PbF
P-Channel
RD
VDS
5.0
VGS
D.U.T.
RG
4.0
-
VDD
-I D, Drain Current (A)
+
3.0
VGS
Pulse Width µs
Duty Factor
2.0
Fig 26a. Switching Time Test Circuit
1.0
td(on)
0.0
25
50
75
100
125
tr
t d(off)
tf
VGS
150
10%
T A , Ambient Temperature (°C)
90%
Fig 25. Maximum Drain Current vs.
Ambient Temperature
VDS
200
RDS(on), Drain-to -Source On Resistance ( m)
RDS(on), Drain-to -Source On Resistance (m )
Fig 26b. Switching Time Waveforms
ID = -4.6A
160
120
80
40
2
4
6
8
10
12
14
16
18
20
-V GS, Gate -to -Source Voltage (V)
Fig 27. Typical On-Resistance vs. Gate
Voltage
10
www.irf.com © 2012 International Rectifier
600
500
Vgs = -4.5V
400
300
200
Vgs = -10V
100
0
0
5
10
15
20
25
30
-I D, Drain Current (A)
Fig 28. Typical On-Resistance vs. Drain
Current
January 14, 2013
IRF9389PbF
P-Channel
20000
2.0
16000
1.8
Power (W)
-V GS(th), Gate threshold Voltage (V)
2.2
1.6
ID = -10μA
1.4
12000
8000
1.2
4000
1.0
0.8
-75 -50 -25
0
25
50
75 100 125 150
0
1E-8
1E-7
1E-6
T J , Temperature ( °C )
Fig 29. Threshold Voltage vs. Temperature
1E-5
1E-4
1E-3
1E-2
Time (sec)
Fig 30. Typical Power vs. Time
Current Regulator
Same Type as D.U.T.
50K
QG
QGS
12V
.2F
.3F
QGD
D.U.T.
VGS
VG
-3mA
IG
Charge
Fig 31a. Basic Gate Charge Waveform
11
+VDS
www.irf.com © 2012 International Rectifier
ID
Current Sampling Resistors
Fig 31b. Gate Charge Test Circuit
January 14, 2013
IRF9389PbF
SO-8 Package Details
'
,1&+(6
0,1
0$;
$
$
E
F
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H %$6,&
+
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SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
www.irf.com © 2012 International Rectifier
January 14, 2013
IRF9389PbF
Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13
www.irf.com © 2012 International Rectifier
January 14, 2013
IRF9389PbF
Qualification information†
Qualification level
Moisture Sensitivity Level
RoHS compliant
Cons umer
(per JE DE C JE S D47F †† guidelines )
MS L1
SO-8
(per JE DE C J-S T D-020D†† )
Yes
Qualification standards can be found at International Rectifiers web site:
http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
14
www.irf.com © 2012 International Rectifier
January 14, 2013
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
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