IRF9395MTR1PBF

IRF9395MPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 32nC 15nC 3.2nC 62nC 23nC -1.8V Q1-Q2 l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, G no Bromide and no Halogen l Dual Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) D G S S S S D DirectFET™ ISOMETRIC MC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MC MP Description The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. Orderable part number Package Type IRF9395MTRPbF IRF9395MTR1PbF DirectFET Medium Can DirectFET Medium Can Standard Pack Form Quantity Tape and Reel 4800 Tape and Reel 1000 Absolute Maximum Ratings VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM g Typical RDS(on) (mΩ) 24 ID = -14A 20 16 12 T J = 125°C 8 4 T J = 25°C 0 2 4 6 8 10 12 14 16 18 20 -VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. 1 Units -30 ±20 -14 -11 -75 -110 e e f -VGS, Gate-to-Source Voltage (V) Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current "TR" suffix "TR1" suffix EOL notice # 264 Max. Parameter VDS Note V A 14.0 ID= -11A 12.0 VDS= -24V VDS= -15V 10.0 VDS= -6V 8.0 6.0 4.0 2.0 0.0 0 20 40 60 80 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF9395MPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. VGS = 0V, ID = -250μA V/°C Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -14A mΩ VGS = -4.5V, ID = -11 A Drain-to-Source Breakdown Voltage -30 ––– ––– ΔΒVDSS/ΔTJ RDS(on) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.012 5.3 ––– 7.0 Gate Threshold Voltage Gate Threshold Voltage Coefficient ––– -1.3 ––– 9.0 -1.8 -6.1 Drain-to-Source Leakage Current ––– ––– ––– ––– IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– gfs Qg Forward Transconductance Total Gate Charge Total Gate Charge 40 ––– ––– ––– 64 32 Pre- Vth Gate-to-Source Charge Post -Vth Gate-to-Source Charge ––– ––– 6.5 3.2 ––– ––– Gate-to-Drain Charge Gate Charge Overdrive Switch charge (Qgs2 + Qgd) ––– ––– 15 7.3 ––– ––– Output Charge Gate Resistance ––– ––– ––– 18.2 23 15 ––– ––– ––– Turn-On Delay Time Rise Time ––– ––– 16 142 ––– ––– Turn-Off Delay Time Fall Time Input Capacitance ––– ––– ––– 76 121 3241 ––– ––– ––– Output Capacitance Reverse Transfer Capacitance ––– ––– 820 466 ––– ––– Min. Typ. Max. Units VGS(th) ΔVGS(th)/ΔTJ IDSS Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Conditions Typ. Max. Units BVDSS V h h 11.9 -2.4 V VDS = VGS, ID = -50μA ––– mV/°C VDS = -24V, VGS = 0V -1.0 μA VDS = -24V, VGS = 0V, TJ = 125°C -150 VGS = -20V -100 nA V 100 GS = 20V VDS = -15V, ID = -11A ––– S VDS = -15V, VGS = -10V, ID = -11A ––– ––– VDS = -15V nC VGS = -4.5V ID = -11A See Fig.15 nC VDS = -16V, VGS = 0V Ω VDD = -15V, VGS = -4.5V ns pF ID = -11A h RG = 1.8Ω See Fig.17 VGS = 0V VDS = -15V ƒ = 1.0KHz Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current g (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ––– ––– -57 ––– ––– -110 ––– ––– -1.2 V ––– ––– 43 62 65 93 ns nC A Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = -11A, VGS = 0V TJ = 25°C, IF = -11A, ,VDD = -15V h di/dt = 260A/μs h Notes: † Pulse width ≤ 400μs; duty cycle ≤ 2%. 2 © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF9395MPbF Absolute Maximum Ratings PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TP TJ TSTG Max. Parameter e e f Units 2.1 1.3 57 270 -40 to + 150 Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range W °C Thermal Resistance e i j fk RθJA RθJA RθJA RθJC RθJ-PCB Parameter Typ. Max. Units ––– 12.5 20 ––– 1.0 60 ––– ––– 2.2 ––– °C/W Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case , Junction-to-PCB Mounted Linear Derating Factor e 0.02 W/°C 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 Thermal Response ( Z thJA ) 10 1 0.1 τJ 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 0.001 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 Ri (°C/W) τA τ1 τ2 τ2 τ3 τ4 τ3 Ci= τi/Ri Ci= τi/Ri 0.01 τA τ4 τi (sec) 10.609 0.239813 3.5414 0.007823 24.659 2.632793 21.032 18.15739 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  Notes: ‡ Used double sided cooling, mounting pad with large heatsink. ˆ Mounted on minimum footprint full size board with metalized ‰ Rθ is measured at TJ of approximately 90°C. back and with small clip heatsink. ƒ Surface mounted on 1 in. square Cu board (still air). 3 © 2014 International Rectifier ‰ Mounted to a PCB with small clip heatsink (still air) ‰ Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) Submit Datasheet Feedback February 24, 2014 IRF9395MPbF 1000 1000 100 BOTTOM TOP -ID, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) TOP VGS -10V -5.0V -4.5V -3.5V -3.3V -3.0V -2.8V -2.6V 100 10 1 -2.6V 0.1 10 -2.6V ≤60μs PULSE WIDTH 1 1 10 0.1 100 1 Fig 4. Typical Output Characteristics ID = -14A Typical RDS(on) (Normalized) -I D, Drain-to-Source Current (A) 1.5 VDS = -15V ≤60μs PULSE WIDTH 100 10 T J = 150°C T J = 25°C T J = -40°C 0.1 2 3 4 V GS = -10V V GS = -4.5V 1.0 0.5 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) -VGS, Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics Fig 7. Normalized On-Resistance vs. Temperature 38 100000 VGS = 0V, f = 1 KHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 30 Typical RDS(on) ( mΩ) 10000 Ciss Coss 1000 T J = 25°C 34 C oss = C ds + C gd C, Capacitance(pF) 100 Fig 5. Typical Output Characteristics 1000 1 10 -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) 1 ≤60μs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 BOTTOM VGS -10V -5.0V -4.5V -3.5V -3.3V -3.0V -2.8V -2.6V Crss Vgs = -4.5V Vgs = -6.0V Vgs = -8.0V Vgs = -10V Vgs = -12V 26 22 18 14 10 6 2 100 1 10 100 0 25 -VDS, Drain-to-Source Voltage (V) © 2014 International Rectifier 75 100 125 -I D, Drain Current (A) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 50 Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage Submit Datasheet Feedback February 24, 2014 IRF9395MPbF 1000 T J = 150°C T J = 25°C T J = -40°C 100 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 1 1ms 10 10ms DC 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 100μs 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.01 -VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 40 20 0 75 100 125 10 100 3.0 2.5 2.0 1.5 ID = 50μA ID = 250μA ID = 1.0mA 1.0 ID = 1.0A 0.5 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature Fig 13. Typical Threshold Voltage vs. Junction Temperature 1200 EAS , Single Pulse Avalanche Energy (mJ) -I D, Drain Current (A) 60 50 1 Fig 11. Maximum Safe Operating Area 80 25 0.1 -VDS, Drain-to-Source Voltage (V) ID TOP -1.2A -1.9A BOTTOM -11A 1000 800 600 400 200 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current 5 © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF9395MPbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) S Qgodr Fig 15a. Gate Charge Test Circuit Qgd Qgs2 Qgs1 Fig 15b. Gate Charge Waveform V(BR)DSS tp 15V DRIVER L VDS D.U.T RG 20V + - VDD IAS I AS 0.01Ω tp Fig 16a. Unclamped Inductive Test Circuit VDS VGS A Fig 16b. Unclamped Inductive Waveforms td(on) RD tr t d(off) tf VGS 10% D.U.T. RG + - VDD 90% V10V GS VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 17a. Switching Time Test Circuit 6 © 2014 International Rectifier Fig 17b. Switching Time Waveforms Submit Datasheet Feedback February 24, 2014 IRF9395MPbF D.U.T Driver Gate Drive + ƒ + ‚ - „ * D.U.T. ISD Waveform Reverse Recovery Current + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt  RG • • • • di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. Re-Applied Voltage + Body Diode VDD Forward Drop Inductor Current Inductor Curent - ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs DirectFET™ Board Footprint, MC Outline (Medium Size Can, C-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D D G G S S S S D D Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF9395MPbF DirectFET™ Outline Dimension, MC Outline (Medium Size Can, C-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS CODE A B C D E F G H J J1 K L M N P METRIC MIN MAX 6.25 6.35 4.80 5.05 3.85 3.95 0.35 0.45 0.58 0.62 0.58 0.62 0.58 0.62 1.18 1.22 0.56 0.60 1.98 2.02 1.02 1.06 2.22 2.26 0.59 0.70 0.03 0.08 0.08 0.17 IMPERIAL MAX MIN 0.250 0.246 0.201 0.189 0.156 0.152 0.018 0.014 0.024 0.023 0.024 0.023 0.023 0.024 0.047 0.048 0.023 0.022 0.078 0.079 0.040 0.041 0.089 0.088 0.028 0.023 0.001 0.003 0.007 0.003 DirectFET™ Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF9395MPbF DirectFET™ Tape & Reel Dimension (Showing component orientation). LOADED TAPE FEED DIRECTION NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX 0.311 7.90 0.319 8.10 0.154 4.10 3.90 0.161 0.469 11.90 0.484 12.30 0.215 5.55 5.45 0.219 0.201 5.10 0.209 5.30 0.256 6.70 6.50 0.264 0.059 1.50 N.C N.C 0.059 1.60 1.50 0.063 N OTE: Controlling dimensions in m m Std reel quantity is 4800 parts (ordered as IR F9395MTRPBF). REEL D IMENSIONS STANDARD OPTION (QTY 4800) IMPERIAL METRIC C ODE MIN MIN MAX MAX A 12.992 330.0 N .C N.C B 0.795 20.2 N .C N.C C 0.504 12.8 0.520 13.2 D 0.059 1.5 N .C N.C E 3.937 100.0 N.C N .C F N.C N.C 18.4 0.724 G 0.488 12.4 14.4 0.567 H 0.469 11.9 15.4 0.606 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ † Qualification Information Industrial † Qualification level (per JEDEC JESD47F††guidelines) Moisture Sensitivity Level MSL1 DirectFET RoHS Compliant (per JEDEC J-STD-020D††) Yes † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. Revision History Date 10/25/2013 2/24/2014 Comments • Updated Qualification level from "Consumer" to "Industrial" on page 9 • Updated data sheet with new IR corporate template • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264) IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.