IRF9540NSTRLPBF

PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L P-Channel Lead-Free D RDS(on) = 117mΩ G Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. VDSS = -100V ID = -23A S D D G D S G D2Pak IRF9540NSPbF Absolute Maximum Ratings D S TO-262 IRF9540NLPbF G D S Gate Drain Source Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ -10V Parameter -23 A ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -14 IDM Pulsed Drain Current -92 PD @TA = 25°C Maximum Power Dissipation 3.1 PD @TC = 25°C Maximum Power Dissipation 110 VGS Linear Derating Factor Gate-to-Source Voltage 0.9 ± 20 W/°C V EAS Single Pulse Avalanche Energy 84 mJ IAR Avalanche Current -14 A c c d c e EAR Repetitive Avalanche Energy dv/dt TJ Peak Diode Recovery dv/dt Operating Junction and TSTG Storage Temperature Range W 11 mJ -13 -55 to + 150 V/ns °C 300 (1.6mm from case ) Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount, steady state) www.irf.com g Typ. Max. Units ––– 1.1 °C/W ––– 40 1 09/30/05 IRF9540NS/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– VGS = 0V, ID = -250µA ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 117 mΩ VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 5.6 ––– ––– S VDS = -50V, ID = -14A IDSS Drain-to-Source Leakage Current µA VDS = -100V, VGS = 0V nA VGS = -20V VGS = -10V, ID = -14A f ––– ––– -50 ––– ––– -250 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Qg Total Gate Charge ––– 73 110 Qgs Gate-to-Source Charge ––– 13 20 Qgd Gate-to-Drain ("Miller") Charge ––– 38 57 td(on) Turn-On Delay Time ––– 13 ––– tr Rise Time ––– 64 ––– ID = -14A td(off) Turn-Off Delay Time ––– 40 ––– RG = 5.1Ω tf Fall Time ––– 45 ––– LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– Ciss Input Capacitance ––– 1450 ––– Coss Output Capacitance ––– 430 ––– VDS = -25V Crss Reverse Transfer Capacitance ––– 230 ––– ƒ = 1.0MHz, See Fig. 5 IGSS VDS = -80V, VGS = 0V, TJ = 125°C VGS = 20V nC ID = -14A VDS = -80V VGS = -10V ns VDD = -50V VGS = -10V nH f f Between lead, 6mm (0.25in.) from package pF and center of die contact VGS = 0V Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– -23 ISM (Body Diode) Pulsed Source Current ––– ––– -92 c A (Body Diode) VSD Diode Forward Voltage ––– ––– -1.6 V trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– ––– 140 890 210 1340 ns nC ton Forward Turn-On Time Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11) ‚ Starting TJ = 25°C, L = 0.88mH RG = 25Ω, IAS = -14A. (See Figure 12) ƒ ISD ≤ -14A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. 2 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = -14A, VGS = 0V f TJ = 25°C, IF = -14A, VDD = -25V di/dt = -100A/µs f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … When mounted on 1" square PCB (FR-4or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRF9540NS/LPbF 1000 1000 100 BOTTOM VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP 10 1 -4.5V 100 BOTTOM VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 10 -4.5V 1 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 25°C Tj = 150°C 0.1 0.1 0.1 1 10 100 0.1 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25°C -ID, Drain-to-Source Current (A) 1 -VDS, Drain-to-Source Voltage (V) TJ = 150°C 10 1 VDS = -50V ≤60µs PULSE WIDTH 0.1 ID = -14A VGS = -10V 1.5 1.0 0.5 2 4 6 8 10 12 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 14 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF9540NS/LPbF 10000 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd -VGS, Gate-to-Source Voltage (V) ID= -14A C, Capacitance(pF) Coss = Cds + Cgd Ciss 1000 Coss Crss 100 VDS = -80V VDS = -50V VDS = -20V 16 12 8 4 0 1 10 100 0 20 -VDS , Drain-to-Source Voltage (V) 1000 -ID, Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) TJ = 150°C 10 TJ = 25°C VGS = 0V 0.8 1.0 1.2 1.4 1.6 1.8 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 100 120 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 10 100µsec 1msec 10msec 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 0.1 0.6 80 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 100 0.4 60 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1 40 2.0 1 10 100 1000 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF9540NS/LPbF RD VDS VGS 24 D.U.T. RG - + -ID, Drain Current (A) 20 VDD -10V 16 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 12 Fig 10a. Switching Time Test Circuit 8 td(on) tr t d(off) tf VGS 10% 4 0 25 50 75 100 125 150 90% VDS TC , Case Temperature (°C) Fig 10b. Switching Time Waveforms Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 τJ 0.05 0.02 0.01 0.01 R1 R1 τJ τ1 R2 R2 Ri (°C/W) R3 R3 τC τ2 τ1 τ2 Ci= τi/Ri Ci i/Ri τ3 τ3 τi (sec) 0.1737838 0.0000610 0.4335992 0.0019590 0.4921007 0.0260060 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF9540NS/LPbF L VDS D.U.T RG -20V IAS tp VDD A DRIVER 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS EAS , Single Pulse Avalanche Energy (mJ) 350 ID -6.7A -9.6A BOTTOM -14A TOP 300 250 200 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Fig 13. Maximum Avalanche Energy vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG -10V QGS .2µF .3µF QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 50KΩ 12V IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit www.irf.com IRF9540NS/LPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* ƒ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + ‚ - - „ +  RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 15. For P-Channel HEXFETS www.irf.com 7 IRF9540NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INTERNAT IONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INT ERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE 8 PART NUMBER F530S DATE CODE P = DES IGNAT ES LEAD - FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMBLY S IT E CODE www.irf.com IRF9540NS/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" Note: "P" in assembly line pos ition indicates "Lead-Free" INTERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNATIONAL RECT IF IER LOGO AS S EMBLY LOT CODE www.irf.com PART NUMBER DATE CODE P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S ITE CODE 9 IRF9540NS/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/05 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/