IRF9953

PD - 95477 IRF9953PbF HEXFET® Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated l Lead-Free Description l S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -30V RDS(on) = 0.25Ω Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Recommended upgrade: IRF7306 or IRF7316 Lower profile/smaller equivalent: IRF7506 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation … TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dtƒ Junction and Storage Temperature Range Symbol Maximum VDS V GS -30 ± 20 -2.3 -1.8 -10 1.6 2.0 1.3 57 -1.3 0.20 -5.0 -55 to + 150 ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Units V A W mJ A mJ V/ ns °C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient… Symbol Limit Units RθJA 62.5 °C/W 7/16/04 IRF9953PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 ––– ––– ––– -1.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.015 0.165 0.290 ––– -2.4 ––– ––– ––– ––– 6.1 1.7 1.1 9.7 14 20 6.9 190 120 61 Max. Units Conditions ––– V V GS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.250 V GS = 10V, ID = -1.0A „ Ω 0.400 V GS = 4.5V, ID = -0.50A „ ––– V V DS = V GS, ID = -250µA ––– S V DS = -15V, I D = -2.3A -2.0 V DS = 24V, VGS = 0V µA -25 V DS = 24V, VGS = 0V, TJ = 55°C 100 V GS = -20V nA -100 V GS = 20V 12 I D = -2.3A 3.4 nC V DS = -10V 2.2 V GS = -10V, See Fig. 10 „ 19 V DD = -10V 28 I D = -1.0A ns 40 R G = 6.0Ω 14 R D = 10Ω „ ––– V GS = 0V ––– pF V DS = -15V ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– 1.3 ––– ––– 16 ––– 0.82 ––– 27 ––– 31 1.2 54 62 A V ns nC Conditions D MOSFET symbol showing the integral reverse G p-n junction diode. S TJ = 25°C, IS = -1.25A, VGS = 0V ƒ TJ = 25°C, IF = -1.25A di/dt = -100A/µs ƒ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A. … Surface mounted on FR-4 board, t ≤ 10sec. ƒ ISD ≤ -1.3A, di/dt ≤ -92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. IRF9953PbF 100 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 10 1 -3.0V 20µs PULSE WIDTH TJ = 25°C A 0.1 0.1 1 10 1 -3.0V 20µs PULSE WIDTH TJ = 150°C A 0.1 10 0.1 -VDS , Drain-to-Source Voltage (V) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 100 -ISD , Reverse Drain Current (A) -ID , Drain-to-Source Current (A) 1 -VDS , Drain-to-Source Voltage (V) 10 TJ = 25°C T J = 150°C 1 VDS = -10V 20µs PULSE WIDTH 0.1 3.0 4.0 5.0 6.0 7.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 8.0 A 10 TJ = 150°C TJ = 25°C 1 VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 -VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage A 1.4 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 R DS(on) , Drain-to-Source On Resistance ( Ω ) IRF9953PbF ID = -1.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 2.0 1.5 VGS = -4.5V 1.0 0.5 VGS = -10V 0.0 0.0 TJ , Junction Temperature ( °C) 1.0 2.0 3.0 0.60 I D = -2.3A 0.20 0.00 3 6 9 12 -V GS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 15 A EAS , Single Pulse Avalanche Energy (mJ) 150 0 5.0 A Fig 6. Typical On-Resistance Vs. Drain Current 0.80 0.40 4.0 -I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature R DS(on) , Drain-to-Source On Resistance ( Ω ) 2.5 ID -0.58A -1.0A BOTTOM -1.3A TOP 120 90 60 30 0 25 50 75 100 125 Starting TJ , Junction Temperature ( °C) Fig 8. Maximum Avalanche Energy Vs. Drain Current 150 IRF9953PbF 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 400 300 Ciss Coss 200 Crss 100 0 1 10 100 A ID = -2.3A VDS =-10V 16 12 8 4 0 0 2 4 6 8 10 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 P DM 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF9953PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 6X 2 3 0.25 [.010] 4 A e e1 8X b 0.25 [.010] A MILLIMET ERS MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° A 5 INCHES MIN MAX K x 45° C y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER IRF9953PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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