IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
HEXFET® Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
D
G
S
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free
Base Part Number
Package Type
IRFB4410ZPbF
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
D
100V
7.2m:
9.0m:
97A
D
D
G
D
S
G
D
S
G
D2Pak
IRFS4410ZPbF
TO-220AB
IRFB4410ZPbF
S
TO-262
IRFSL4410ZPbF
G
D
S
Gate
Drain
Source
Standard Pack
D
Orderable Part Number
Form
Quantity
TO-220
Tube
50
IRFB4410ZPbF
IRFSL4410ZPbF
TO-262
IRFS4410ZPbF
D2Pak
Tube
Tube
Tape and Reel Left
Tape and Reel Right
50
50
800
800
IRFSL4410ZPbF
IRFS4410ZPbF
IRFS4410ZTRLPbF
IRFS4410ZTRRPbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
69
IDM
Pulsed Drain Current
390
PD @TC = 25°C
Units
97
ID @ TC = 25°C
c
A
Maximum Power Dissipation
230
W
Linear Derating Factor
1.5
W/°C
V
VGS
Gate-to-Source Voltage
dv/dt
TJ
Peak Diode Recovery
Operating Junction and
TSTG
Storage Temperature Range
± 20
e
16
V/ns
°C
-55 to + 175
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
x
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
x
10lb in (1.1N m)
Mounting torque, 6-32 or M3 screw
d
242
mJ
See Fig. 14, 15, 22a, 22b,
f
A
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
–––
0.65
Case-to-Sink, Flat Greased Surface , TO-220
0.50
–––
Junction-to-Ambient, TO-220
–––
62
–––
40
j
RθJC
Junction-to-Case
RθCS
RθJA
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
1
j
ij
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Units
°C/W
April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
Min. Typ. Max. Units
100
–––
–––
2.0
–––
–––
–––
–––
–––
–––
0.12
7.2
–––
–––
–––
–––
–––
0.70
–––
–––
9.0
4.0
20
250
100
-100
–––
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
mΩ VGS = 10V, ID = 58A
V VDS = VGS, ID = 150μA
μA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Ω
c
f
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Min. Typ. Max. Units
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
g
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
h
–––
83
19
27
56
16
52
43
57
4820
340
170
420
690
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
VDS = 10V, ID = 58A
ID = 58A
VDS =50V
VGS = 10V
ID = 58A, VDS =0V, VGS = 10V
VDD = 65V
ID = 58A
RG =2.7Ω
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 80V , See Fig.11
VGS = 0V, VDS = 0V to 80V
f
ns
pF
f
f
h
g
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
c
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.143mH
RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 58A, di/dt ≤ 610A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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Min. Typ. Max. Units
–––
–––
–––
–––
Conditions
97
A
MOSFET symbol
390
A
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 58A, VGS = 0V
TJ = 25°C
VR = 85V,
TJ = 125°C
IF = 58A
di/dt = 100A/μs
TJ = 25°C
S
f
––– –––
1.3
V
–––
38
57
ns
–––
46
69
–––
53
80
nC
TJ = 125°C
–––
82
120
–––
2.5
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS .
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
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April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
1000
1000
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
4.5V
10
BOTTOM
10
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
100
2.5
VDS = 50V
≤60μs PULSE WIDTH
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
1000
100
T J = 25°C
10
TJ = 175°C
1
0.1
ID = 58A
VGS = 10V
2.0
1.5
1.0
0.5
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 58A
C oss = C ds + C gd
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
10000
Ciss
Coss
1000
Crss
VDS= 80V
VDS= 40V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
4.5V
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0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
1000
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
100
10
T J = 25°C
1
10msec
DC
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
1
0.0
0.5
1.0
1.5
2.0
2.5
0
VSD, Source-to-Drain Voltage (V)
ID, Drain Current (A)
80
60
40
20
0
75
100
125
150
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
100
50
100
125
Id = 5mA
120
115
110
105
100
95
90
-60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
2.0
Fig 10. Drain-to-Source Breakdown Voltage
EAS , Single Pulse Avalanche Energy (mJ)
1000
1.8
1.6
1.4
Energy (μJ)
10
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
25
1
VDS, Drain-to-Source Voltage (V)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-10 0
10 20 30 40 50 60 70 80 90 100
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
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ID
6.4A
9.4A
BOTTOM 58A
900
TOP
800
700
600
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
τC
τ2
τ1
τ
Ri (°C/W) τi (sec)
0.237
0.000178
0.413
τ2
0.003772
Ci= τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Δ Tj = 150°C and
Tstart =25°C (Single Pulse)
Duty Cycle = Single Pulse
Avalanche Current (A)
0.01
0.05
10
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
150
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 58A
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
20
I = 39A
F
V = 85V
R
TJ = 25°C _____
4.0
15
3.5
IRRM (A)
VGS(th), Gate threshold Voltage (V)
4.5
3.0
2.5
2.0
1.5
ID = 150μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
TJ = 125°C ----------
10
5
0
1.0
-75 -50 -25 0
100
25 50 75 100 125 150 175 200
200
300
500
600
700
dif/dt (A/μs)
T J , Temperature ( °C )
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
400
20
15
400
IF = 58A
V = 85V
R
T = 25°C _____
J
TJ = 125°C ----------
350
I = 39A
F
V = 85V
R
TJ = 25°C _____
300
TJ = 125°C ----------
Qrr (nC)
IRRM (A)
250
10
200
150
100
5
50
0
0
100
200
300
400
500
600
100
700
200
300
400
500
600
700
dif/dt (A/μs)
dif/dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
450
400
350
Qrr (nC)
300
I = 58A
F
V = 85V
R
TJ = 25°C _____
TJ = 125°C
----------
250
200
150
100
50
0
100
200
300
400
500
600
700
dif/dt (A/μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
D.U.T
Driver Gate Drive
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
I AS
0.01Ω
Fig 22a. Unclamped Inductive Test Circuit
Fig 22b. Unclamped Inductive Waveforms
LD
VDS
VDS
90%
+
VDD D.U.T
10%
VGS
VGS
Second Pulse Width < 1μs
Duty Factor < 0.1%
td(on)
Fig 23a. Switching Time Test Circuit
tr
td(off)
tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
20K
1K
VCC
Vgs(th)
S
Qgodr
Fig 24a. Gate Charge Test Circuit
7
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Qgd
Qgs2 Qgs1
Fig 24b. Gate Charge Waveform
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April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
PART NUMBER
FB4410Z
PYWW?
LC
LC
OR
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
PART NUMBER
FB4410Z
YWWP
LC
LC
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
PART NUMBER
IRFS4410Z
P YW W ?
LC
LC
OR
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
PART NUMBER
FS4410Z
YW WP
LC
LC
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
INTERNATIONAL
RECTIFIER LOGO
FSL4410Z
PYWW?
ASSEMBLY
LOT CODE
LC
LC
PART NUMBER
OR
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
INTERNATIONAL
RECTIFIER LOGO
FSL4410Z
YWWP
ASSEMBLY
LOT CODE
LC
LC
PART NUMBER
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
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April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
11
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IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
†
Qualification information
Industrial
Qualification level
††
(per JEDEC JESD47F guidelines)
Moisture Sensitivity Level
TO-220
N/A
D2Pak
TO-262
MS L1
RoHS compliant
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
4/25/2014
Comment
• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 8, 9 & 10.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.