IRFB7446GPBF

StrongIRFET™ IRFB7446GPbF HEXFET® Power MOSFET Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters   D G S Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free Halogen-Free TO-220 8 ID (Package Limited) 120A S Source Orderable Part Number IRFB7446GPbF 125 ID = 70A 100 6 T J = 125°C 4 2 T J = 25°C 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage www.irf.com 75 50 25 0 2 1 123A D Drain Standard Pack Form Quantity Tube 50 ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) IRFB7446GPbF ID (Silicon Limited) TO-220AB IRFB7446GPbF G Gate Package Type 40V 2.6m 3.3m S D G      Base part number VDSS RDS(on) typ. max © 2014 International Rectifier 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 19, 2014 IRFB7446GPbF   Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Max. Continuous Drain Current, VGS @ 10V (Silicon Limited) 123 Continuous Drain Current, VGS @ 10V (Silicon Limited) 87 Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120 Pulsed Drain Current  492 Maximum Power Dissipation 99 Linear Derating Factor 0.66 VGS Gate-to-Source Voltage ± 20 TJ Operating Junction and -55 to + 175   TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)   Avalanche Characteristics  111 EAS (Thermally limited) Single Pulse Avalanche Energy  236 EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  See Fig 15, 16, 23a, 23b Repetitive Avalanche Energy  EAR Thermal Resistance   Symbol Parameter Typ. Max. Junction-to-Case  RJC ––– 1.52 Case-to-Sink, Flat Greased Surface RCS 0.50 ––– Junction-to-Ambient  RJA ––– 62 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Min. Typ. Max. 40 ––– ––– ––– 0.033 ––– ––– 2.6 3.3 ––– 3.9 ––– 2.2 3.0 3.9 ––– ––– 1.0 ––– ––– 150 ––– ––– 100 ––– ––– -100 ––– 1.6 ––– Units A  W W/°C V °C   mJ A mJ Units °C/W   Units Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 5mA  VGS = 10V, ID = 70A  m VGS = 6.0V, ID = 35A  V VDS = VGS, ID = 100µA VDS =40 V, VGS = 0V µA VDS =40V,VGS = 0V,TJ =125°C VGS = 20V nA VGS = -20V  Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)  Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.046mH,RG = 50, IAS = 70A, VGS =10V.  ISD  70A, di/dt  1174A/µs, VDD  V(BR)DSS, TJ  175°C.  Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C.  Limited by TJmax, TJ = 25°C, L= 1mH, RG = 50, IAS = 22A, VGS =10V. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014 IRFB7446GPbF   Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Min. 269 ––– ––– ––– ––– ––– ––– Typ. ––– 62 16 20 42 11 34 td(off) Turn-Off Delay Time ––– 33 tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– ––– ––– ––– 23 3183 475 331 ––– 596 ––– VGS = 0V, VDS = 0V to 32V ––– 688 ––– VGS = 0V, VDS = 0V to 32V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 120 ––– ––– 492 Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage ––– 0.9 1.3 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– ––– 7.6 22 24 15 15 1.0 ––– ––– ––– ––– ––– ––– Coss eff.(ER) Coss eff.(TR) Max. Units Conditions ––– S VDS = 10V, ID =70A 93 ID = 70A ––– VDS = 20V nC   ––– VGS = 10V ––– ––– VDD = 20V ––– ID = 30A ns ––– RG= 2.7 VGS = 10V ––– ––– ––– ––– pF   VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig.5 Diode Characteristics   Symbol IS ISM 3 www.irf.com © 2014 International Rectifier A V D G S TJ = 25°C,IS = 70A,VGS = 0V  V/ns TJ = 175°C,IS = 70A,VDS = 40V TJ = 25°C VDD = 34V ns TJ = 125°C IF = 70A, TJ = 25°C di/dt = 100A/µs  nC TJ = 125°C   A TJ = 25°C  Submit Datasheet Feedback November 19, 2014 IRFB7446GPbF   1000 1000 100 BOTTOM 100 10 4.5V 1 60µs PULSE WIDTH BOTTOM 4.5V 10 60µs PULSE WIDTH Tj = 25°C Tj = 175°C 0.1 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.2 T J = 175°C 100 10 T J = 25°C 1 VDS = 10V 60µs PULSE WIDTH 0.1 2 4 6 8 ID = 70A VGS = 10V 1.8 1.4 1.0 0.6 10 -60 -20 100 140 180 14.0 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd 10000 Ciss Coss 1000 60 Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 100000 20 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 Fig 4. Typical Output Characteristics 1000 ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Crss ID= 70A 12.0 VDS = 32V VDS = 20V 10.0 8.0 6.0 4.0 2.0 0.0 100 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V www.irf.com © 2014 International Rectifier 0 10 20 30 40 50 60 70 80 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback November 19, 2014 IRFB7446GPbF   10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 175°C 100 T J = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 100µsec 100 1msec Package Limited 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.0 0.5 1.0 1.5 0.1 2.0 1 10 100 VDS , Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 0.6 50 Id = 5.0mA 49 VDS = 0V to 32V 0.5 48 47 0.4 Energy (µJ) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) DC 46 45 44 0.3 0.2 43 42 0.1 41 0.0 40 -60 -20 20 60 100 140 0 180 T J , Temperature ( °C ) 10 15 20 25 30 35 40 45 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage RDS(on), Drain-to -Source On Resistance ( m) 5 Fig 12. Typical Coss Stored Energy 20.0 VGS = VGS = VGS = VGS = VGS = 15.0 5.5V 6.0V 7.0V 8.0V 10V 10.0 5.0 0.0 0 100 200 300 400 500 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014 IRFB7446GPbF   Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart = 25°C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 120 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 70A 80 40 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2014 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav   Submit Datasheet Feedback November 19, 2014 IRFB7446GPbF   6 5 IF = 46A V R = 34V 4 TJ = 25°C TJ = 125°C 3.5 IRRM (A) VGS(th) , Gate threshold Voltage (V) 4.5 2.5 ID = ID = ID = ID = 1.5 100µA 250µA 1.0mA 1.0A 3 2 1 0.5 0 -75 -25 25 75 125 175 225 0 200 400 T J , Temperature ( °C ) 800 1000 Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 5 70 IF = 70A V R = 34V 4 IF = 46A V R = 34V 60 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 50 3 QRR (nC) IRRM (A) 600 diF /dt (A/µs) 2 40 30 20 1 10 0 0 0 200 400 600 800 1000 0 diF /dt (A/µs) 200 400 600 800 1000 diF /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt QRR (nC) 60 50 IF = 70A V R = 34V 40 TJ = 25°C TJ = 125°C 30 20 10 0 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014 IRFB7446GPbF   Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG IAS 20V tp + V - DD A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD  Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback November 19, 2014 IRFB7446GPbF   TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F B 4 3 1 0 G P B F N o t e : "G " s u f f ix in p a r t n u m b e r in d ic a t e s "H a lo g e n - F r e e " N o t e : "P " in a s s e m b ly lin e p o s it io n in d ic a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O PART N U M BER D A TE C O D E: Y = L A S T D IG IT O F C A L E N D A R YE A R ASSEM B LY LO T C O D E W W = W O RK W EEK X= FA C TO R Y C O D E TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014 IRFB7446GPbF   Qualification Information†   Industrial (per JEDEC JESD47F) †† Qualification Level   Moisture Sensitivity Level TO-220 N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/19/2014 Comment Updated data sheet with IR corporate template. Updated EAS (L =1mH) = 236mJ on page 2 Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V”. on page 2 Updated package outline on page 9 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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