StrongIRFET™
IRFB7730PbF
IRFS7730PbF
IRFSL7730PbF
HEXFET® Power MOSFET
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
VDSS
75V
RDS(on) typ.
max
2.2m
2.6m
ID (Silicon Limited)
246A
ID (Package Limited)
195A
D
G
S
D
D
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
S
D
G
S
G
TO-220AB
IRFB7730PbF
IRFB7730PbF
IRFSL7730PbF
IRFS7730PbF
TO-220
TO-262
D2-Pak
8
S
Source
Orderable Part Number
IRFB7730PbF
IRFSL7730PbF
IRFS7730PbF
IRFS7730TRLPbF
250
ID = 100A
Limited by package
200
6
T J = 125°C
4
2
150
100
50
T J = 25°C
0
0
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m )
Package Type
S
D
TO-262
IRFSL7730PbF
D2Pak
IRFS7730PbF
G
Gate
Base part number
G
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25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFB/S/SL7730PbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics
Symbol
Parameter
EAS (Thermally limited)
Single Pulse Avalanche Energy
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR
Avalanche Current
Repetitive Avalanche Energy
EAR
Thermal Resistance
Symbol
Parameter
Junction-to-Case
RJC
Case-to-Sink, Flat Greased Surface
RCS
Junction-to-Ambient (TO-220)
RJA
Junction-to-Ambient (PCB Mount) (D2Pak)
RJA
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Max.
246
174
195
984*
375
2.5
± 20
Units
A
W
W/°C
V
-55 to + 175
°C
300
10 lbf·in (1.1 N·m)
Max.
465
898
Units
mJ
See Fig 15, 16, 23a, 23b
Typ.
–––
0.50
–––
–––
Max.
0.40
–––
62
40
A
mJ
Units
°C/W
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
40
––– mV/°C Reference to 25°C, ID = 1mA
2.2
2.6
m VGS = 10V, ID = 100A
2.6
–––
VGS = 6.0V, ID = 50A
–––
3.7
V
VDS = VGS, ID = 250µA
–––
1.0
VDS = 75 V, VGS = 0V
µA
––– 150
VDS = 75V,VGS = 0V,TJ = 125°C
––– 100
VGS = 20V
nA
––– -100
VGS = -20V
2.1
–––
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 93µH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 1626A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 42A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
* Pulse drain current is limited at 780A by source bonding technology.
2
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IRFB/S/SL7730PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Min.
249
–––
–––
–––
–––
–––
–––
Typ.
–––
271
55
79
192
21
120
td(off)
Turn-Off Delay Time
–––
180
tf
Ciss
Coss
Crss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
–––
–––
–––
–––
115
13660
1120
690
–––
1060
–––
VGS = 0V, VDS = 0V to 60V
–––
1275
–––
VGS = 0V, VDS = 0V to 60V
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max. Units
–––
–––
246
–––
–––
984*
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
–––
–––
–––
–––
–––
–––
16
44
51
70
97
2.6
–––
–––
–––
–––
–––
–––
Coss eff.(ER)
Coss eff.(TR)
Max. Units
Conditions
–––
S VDS = 10V, ID =100A
407
ID = 100A
–––
VDS = 38V
nC
–––
VGS = 10V
–––
–––
VDD = 38V
–––
ID = 100A
ns
–––
RG= 2.7
VGS = 10V
–––
–––
–––
–––
pF
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
Diode Characteristics
Symbol
IS
ISM
3
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A
V
D
G
S
TJ = 25°C,IS = 100A,VGS = 0V
V/ns TJ = 175°C,IS =100A,VDS = 75V
TJ = 25°C
VDD = 64V
ns
TJ = 125°C
IF = 100A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
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IRFB/S/SL7730PbF
10000
10000
1000
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
100
BOTTOM
100
10
4.5V
4.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
10
1
0.1
1
10
0.1
100
100
2.4
100
TJ = 175°C
10
TJ = 25°C
1
V DS = 25V
60µs PULSE WIDTH
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID = 100A
V GS = 10V
2.0
1.6
1.2
0.8
0.4
0.1
2.0
3.0
4.0
5.0
6.0
-60 -40 -20 0 20 40 60 80 100120140160180
7.0
TJ , Junction Temperature (°C)
V GS, Gate-to-Source Voltage (V)
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
1000000
14.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
V GS, Gate-to-Source Voltage (V)
ID= 100A
Coss = Cds + Cgd
100000
C, Capacitance (pF)
10
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Ciss
10000
Coss
Crss
1000
12.0
V DS= 60V
V DS= 38V
10.0
V DS= 15V
8.0
6.0
4.0
2.0
0.0
100
1
10
100
0
50
100
150
200
250
300
V DS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Typical Gate Charge vs.
Gate-to-Source Voltage
4
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IRFB/S/SL7730PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 175°C
100
TJ = 25°C
10
100
Limited by
package
OPERATION
IN THIS
AREA
LIMITED BY
RDS(on)
10
1
V GS = 0V
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.1
1.0
0.2
0.6
1.0
1.4
1.8
0.1
2.2
1
10
VDS, Drain-toSource Voltage (V)
V SD, Source-to-Drain Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
95
6.0
Id = 1.0mA
5.0
90
4.0
Energy (µJ)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
100µsec
1msec
85
3.0
2.0
80
1.0
75
0.0
-10
-60 -40 -20 0 20 40 60 80 100120140160180
0
T J , Temperature ( °C )
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
RDS (on), Drain-to -Source On Resistance (m)
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
3.0
2.8
2.6
2.4
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
2.2
2.0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFB/S/SL7730PbF
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart = 25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
EAR , Avalanche Energy (mJ)
500
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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© 2014 International Rectifier
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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IRFB/S/SL7730PbF
20
15
3.0
TJ = 125°C
2.5
ID = 250µA
ID = 1.0mA
2.0
10
ID = 1.0A
1.5
5
1.0
0.5
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
400
600
800
1000
TJ , Temperature ( °C )
diF /dt (A/µs)
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
500
20
IF = 100A
V R = 64V
IF = 60A
V R = 64V
TJ = 25°C
400
TJ = 25°C
TJ = 125°C
TJ = 125°C
QRR (nC)
15
IRRM (A)
IF = 60A
V R = 64V
TJ = 25°C
3.5
IRRM (A)
V GS(th) , Gate threshold Voltage (V)
4.0
10
5
300
200
100
0
0
0
200
400
600
800
0
1000
200
400
600
800
1000
diF /dt (A/µs)
diF /dt (A/µs)
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
500
IF = 100A
V R = 64V
QRR (nC)
400
TJ = 25°C
TJ = 125°C
300
200
100
0
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
7
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IRFB/S/SL7730PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
I AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
8
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRFB/S/SL7730PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAM PLE:
T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789
ASSEM BLED O N W W 19, 2000
IN T H E A S S E M B L Y L IN E "C "
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d - F r e e "
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
ASSEM BLY
LO T C O D E
PART NUM BER
D ATE C O D E
YEA R 0 = 2000
W EEK 19
L IN E C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFB/S/SL7730PbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THISIS AN IRL3103L
LOTCODE1789
ASSEMBLED ON WW19, 1997
IN THEASSEMBLYLINE"C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOTCODE
PARTNUMBER
DATECODE
YEAR7 = 1997
WEEK 19
LINEC
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOTCODE
PARTNUMBER
DATECODE
P= DESIGNATES LEAD-FREE
PRODUCT(OPTIONAL)
YEAR7 = 1997
WEEK 19
A = ASSEMBLYSITECODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRFB/S/SL7730PbF
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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IRFB/S/SL7730PbF
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Qualification Level
Moisture Sensitivity Level
TO-220
D2Pak
TO-262
RoHS Compliant
Industrial
(per JEDEC JESD47F) ††
N/A
MSL1
N/A
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
11/7/2014
Comments
Updated EAS (L =1mH) = 898mJ on page 2
Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 42A, VGS =10V” on page 2
Updated package outline on page 9,10,11.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
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